Explore the words cloud of the GreenDiamond project. It provides you a very rough idea of what is the project "GreenDiamond" about.
The following table provides information about the project.
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
|Coordinator Country||France [FR]|
|Total cost||4˙443˙920 €|
|EC max contribution||3˙983˙756 € (90%)|
1. H2020-EU.3.3.5. (New knowledge and technologies)
|Duration (year-month-day)||from 2015-05-01 to 2020-04-30|
Take a look of project's partnership.
|1||CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS||FR (PARIS)||coordinator||889˙500.00|
|2||FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.||DE (MUNCHEN)||participant||339˙992.00|
|3||AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS||ES (MADRID)||participant||338˙562.00|
|4||COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES||FR (PARIS 15)||participant||270˙000.00|
|5||UNIVERSITY COLLEGE LONDON||UK (LONDON)||participant||270˙000.00|
|6||ION BEAM SERVICES||FR (ROUSSET)||participant||260˙000.00|
|7||INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM||BE (LEUVEN)||participant||249˙576.00|
|8||THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE||UK (CAMBRIDGE)||participant||220˙000.00|
|9||UNIVERSIDAD DE CADIZ||ES (CADIZ)||participant||220˙000.00|
|10||CAMBRIDGE MICROELECTRONICS LTD||UK (CAMBRIDGE)||participant||205˙625.00|
|11||FUNDACION TECNALIA RESEARCH & INNOVATION||ES (DERIO BIZKAIA)||participant||200˙000.00|
|12||WAVESTONE LUXEMBOURG SA||LU (LEUDELANGE)||participant||160˙500.00|
|13||EUROPEAN SYNCHROTRON RADIATION FACILITY||FR (GRENOBLE)||participant||150˙000.00|
|14||INDRA SISTEMAS SA||ES (ALCOBENDAS MADRID)||participant||140˙272.00|
|15||WIND INERTIA TECHNOLOGIES SL||ES (SEVILLA)||participant||69˙727.00|
The key to the efficient transmission and conversion of low-carbon electrical energy is the improvement of power electronic devices. Diamond is considered to be the ultimate wide bandgap semiconductor material for applications in high power electronics due to its exceptional thermal and electronic properties. Two recent developments - the emergence of commercially available electronic grade single crystals and a scientific breakthrough in creating a MOS channel in diamond technology, have now opened new opportunities for the fabrication and commercialisation of diamond power transistors. These will result in substantial improvements in the performance of power electronic systems by offering higher blocking voltages, improved efficiency and reliability, as well as reduced thermal requirements thus opening the door to more efficient green electronic systems. These improvements are expected to increase the efficiency of power converters by a factor of 4, yielding a 75% reduction in losses. In this context, the objective of GreenDiamond is to fabricate a 10kV transistor in a high power package, followed by a high voltage AC/DC converter based on such devices. To meet GreenDiamond’s challenging goals, the consortium gathers experts on power device design, diamond growth and characterization, packaging and testing as well as an innovative end-user. Most of the partners are also involved in SiC or GaN technology, allowing the project to benefit from their ample experience and achievements in wide bandgap semiconductors. As far as diamond transistor structure is concerned, unlike GaN and SiC, Europe still has a significant scientific and technological advantage over non-EU competitors. It is therefore extremely important to maintain the competitive edge that will lead the development of truly green electronics in the near to medium term future.
|Video for public interest||Documents, reports||2020-02-25 11:01:54|
|Executive summary on optimal baseplate and ceramic substrate for diamond MOS packaging (associated with Task 7.1)||Documents, reports||2020-02-25 11:01:54|
|GreenDiamond Workshop I||Documents, reports||2020-02-25 11:01:54|
|Report on understanding of early stages of epitaxial layer growth for p, nitrogen, n and p+ doped diamond layers (associated with Task 4.2).||Documents, reports||2020-02-25 11:01:53|
|Project Branding Logo and Website||Documents, reports||2020-02-25 11:01:53|
|Report on the electrical performance of the DC and AC small signal characterization bench||Documents, reports||2020-02-25 11:01:53|
|Refined bulk and surface defect analyses on selected set of substrates||Documents, reports||2020-02-25 11:01:53|
Take a look to the deliverables list in detail: detailed list of GreenDiamond deliverables.
|year||authors and title||journal||last update|
James E. Butler, Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev, Valerii Chernov, Sergey Bogdanov, Mikail Drozdov, Evgeniy Demidov, Ekaterina Surovegina, Vladimir Shashkin, Albert Davydov, Haiyan Tan, Louisa Meshi, Alexander C. Pakpour-Tabrizi, Marie-Laure Hicks, Richard B. Jackman
Nanometric diamond delta doping with boron
published pages: 1600329, ISSN: 1862-6254, DOI: 10.1002/pssr.201600329
|physica status solidi (RRL) - Rapid Research Letters 11/1||2020-02-25|
Fernando Lloret, Daniel Araujo, David Eon, MarÃa del Pilar Villar, Juan-MarÃa Gonzalez-Leal, Etienne Bustarret
Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates
published pages: 2570-2574, ISSN: 1862-6300, DOI: 10.1002/pssa.201600182
|physica status solidi (a) 213/10||2020-02-25|
P. Muret, A. TraorÃ©, A. MarÃ©chal, D. Eon, J. Pernot, J. C. Pináº½ro, M. P. Villar, D. Araujo
Potential barrier heights at metal on oxygen-terminated diamond interfaces
published pages: 204505, ISSN: 0021-8979, DOI: 10.1063/1.4936317
|Journal of Applied Physics 118/20||2020-02-25|
Fernando Lloret, D. Araujo, M.P. Villar, L. Liu, Konstantinos Zekentes
Si NWs Conversion to Si-SiC Core-Shell NWs by MBE
published pages: 965-969, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.821-823.965
|Materials Science Forum 821-823||2020-02-25|
J.C. PiÃ±ero, D. AraÃºjo, A. Fiori, A. TraorÃ©, M.P. Villar, D. Eon, P. Muret, J. Pernot, T. Teraji
Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
published pages: , ISSN: 0169-4332, DOI: 10.1016/j.apsusc.2016.04.166
|Applied Surface Science||2020-02-25|
F. Lloret, D. Araujo, M. P. Alegre, J. M. Gonzalez-Leal, M. P. Villar, D. Eon, E. Bustarret
TEM study of defects versus growth orientations in heavily boron-doped diamond
published pages: 2468-2473, ISSN: 1862-6300, DOI: 10.1002/pssa.201532175
|physica status solidi (a) 212/11||2020-02-25|
F. Lloret, A. Fiori, D. Araujo, D. Eon, M. P. Villar, E. Bustarret
Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
published pages: 181901, ISSN: 0003-6951, DOI: 10.1063/1.4948373
|Applied Physics Letters 108/18||2020-02-25|
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