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MOS-QUITO SIGNED

MOS-based Quantum Information TechnOlogy

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EC-Contrib. €

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Project "MOS-QUITO" data sheet

The following table provides information about the project.

Coordinator
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 

Organization address
address: RUE LEBLANC 25
city: PARIS 15
postcode: 75015
website: www.cea.fr

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Project website http://www.mos-quito.eu/
 Total cost 3˙973˙360 €
 EC max contribution 3˙450˙622 € (87%)
 Programme 1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
 Code Call H2020-ICT-2015
 Funding Scheme RIA
 Starting year 2016
 Duration (year-month-day) from 2016-04-01   to  2019-09-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) coordinator 1˙146˙568.00
2    KOBENHAVNS UNIVERSITET DK (KOBENHAVN) participant 491˙007.00
3    Teknologian tutkimuskeskus VTT Oy FI (Espoo) participant 484˙486.00
4    UNIVERSITY COLLEGE LONDON UK (LONDON) participant 456˙061.00
5    HITACHI EUROPE LIMITED UK (MAIDENHEAD) participant 450˙000.00
6    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) participant 422˙500.00
7    ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE CH (LAUSANNE) participant 0.00

Map

 Project objective

Quantum computing is now widely regarded by many in academia, governments and industry to represent a major new frontier in information technology with the potential for a disruptive impact. Many different materials and approaches have been explored, with a narrowing of focus in recent years on scalable implementations based on solid state platforms. In particular, there is now strong evidence that silicon, the primary platform technology for today’s processor technology, inherently possesses many key properties that make it advantageous for quantum computing. Two types of qubit based on spins in silicon nano-devices made in academic research labs have already been reported with demonstrated high-fidelity operation. Our project builds on this success and aims to take this technology to the next readiness level by showing that silicon-based qubits can be realised within a full CMOS platform, using the 300mm-scale fabrication facilities in our consortium. In doing so we will demonstrate the true potential of silicon based qubits in terms of scalability and manufacturability. Our focus is on distilling the silicon device design down to the simplest core element necessary to demonstrate qubit behaviour, in order to lay the foundation for a scalable technology. We will design, model and fabricate these qubit devices, and then benchmark them using key operating parameters. Our attention is not limited at the lowest level technology layer where the qubits reside, and includes higher control layers necessary to operate such devices, including demonstrating strategies for achieving local control and readout in large-scale arrays without cross-talk and developing cryo-CMOS electronics to support the qubit operation. Both of these may be spun-out and yield their own technological impacts. Thus, our holistic approach offers a wider opportunity to harness the tremendous proven capabilities of integrated CMOS technology to become a key driver of quantum technology development.

 Deliverables

List of deliverables.
D4.3 Report on all- electrical two- axis coherent control of a NW-FET spin qubit Documents, reports 2020-02-27 15:03:58
D5.3 Design of a fault tolerant logic qubit Documents, reports 2020-02-27 15:04:03
D3.2 Report on first realization of single qubits Documents, reports 2020-02-27 15:03:54
D7.3 Dissemination and exploitation report Documents, reports 2020-02-27 15:04:06
D4.4 Report on coherent control of NW- FET spin qubits using globally- applied μ-wave field combined with local addressing via electric fields Documents, reports 2020-02-27 15:04:02
D1.7 Final report Documents, reports 2020-01-14 15:25:11
D7.2 Dissemination and exploitation report Documents, reports 2019-05-31 15:13:32
D7.1 Dissemination and exploitation report Documents, reports 2019-05-31 15:13:41
D1.3 Data management plan Other 2019-05-31 15:19:37
D3.1 Report on tunability of split-gate devices into qubit operation Documents, reports 2019-05-31 15:13:37
D1.1 Setting up a website Documents, reports 2019-05-31 15:13:40
D1.2 Kick-off meeting Documents, reports 2019-05-31 15:13:37

Take a look to the deliverables list in detail:  detailed list of MOS-QUITO deliverables.

 Publications

year authors and title journal last update
List of publications.
2019 David J. Ibberson, Lisa A. Ibberson, Geoff Smithson, James A. Haigh, Sylvain Barraud, M. Fernando Gonzalez-Zalba
Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices
published pages: 123501, ISSN: 0003-6951, DOI: 10.1063/1.5082894
Applied Physics Letters 114/12 2019-11-22
2019 M. Esterli, R.M. Otxoa, M.F. Gonzalez-Zalba
Small-signal equivalent circuit for double quantum dots at low-frequencies
published pages: , ISSN: 0003-6951, DOI:
Applied Physics Letters 2019-11-22
2019 Zhenyu Cai, Michael A. Fogarty, Simon Schaal, Sofia Patomaki, Simon C. Benjamin, John J. L. Morton
A Silicon Surface Code Architecture Resilient Against Leakage Errors
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-11-22
2019 L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
published pages: , ISSN: , DOI:
IEEE International Electron Devices Meeting proceedings 2019-11-22
2019 Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier
Gate-based high fidelity spin readout in a CMOS device
published pages: 737-741, ISSN: 1748-3387, DOI: 10.1038/s41565-019-0443-9
Nature Nanotechnology 14/8 2019-11-22
2019 Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba
A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-11-22
2019 Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L.W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J.L. Morton
Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity
published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.11.054014
Physical Review Applied 11/5 2019-11-22
2018 E Ferraro, M Fanciulli, M De Michielis
Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
published pages: 115022, ISSN: 2399-6528, DOI: 10.1088/2399-6528/aaf088
Journal of Physics Communications 2/11 2019-11-22
2019 Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M. Marcus, Ferdinand Kuemmeth
Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate
published pages: 5628-5633, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.9b02149
Nano Letters 19/8 2019-11-22
2019 Y. Peng, A. Ruffino, E. Charbon
Analysis on Noise Requirements of RF Front-End Circuits for Spin Qubit Readout
published pages: , ISSN: , DOI: 10.5075/epfl-iclab-icnf-269250
25th International Conference on Noise and Fluctuations 2019-11-22
2019 Elena Ferraro, Marco De Michielis
Bandwidth-Limited and Noisy Pulse Sequences for Single Qubit Operations in Semiconductor Spin Qubits
published pages: 1042, ISSN: 1099-4300, DOI: 10.3390/e21111042
Entropy 21/11 2019-11-22
2019 E. Ferraro, M. Fanciulli, M. De Michielis
Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.100.035310
Physical Review B 100/3 2019-11-22
2019 Arnout Beckers, Farzan Jazaeri, Christian Enz
Cryogenic MOSFET Threshold Voltage Model
published pages: , ISSN: , DOI:
arXiv Online Repository 2019-11-22
2019 Rubén M. Otxoa, Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Franco Nori, M. Fernando Gonzalez-Zalba
A quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry
published pages: , ISSN: 2469-9950, DOI:
Physical Review B 2019-11-22
2019 S. Schaal, I. Ahmed, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, M. Vinet, C.-M. Lee, N. Stelmashenko, J. W. A. Robinson, J. Y. Qiu, S. Hacohen-Gourgy, I. Siddiqi, M. F. Gonzalez-Zalba, J. J. L. Morton
Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-11-22
2017 R. Mizuta, R. M. Otxoa, A. C. Betz, M. F. Gonzalez-Zalba
Quantum and tunneling capacitance in charge and spin qubits
published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.045414
Physical Review B 95/4 2019-06-18
2018 Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Rubén M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando Gonzalez-Zalba
A silicon-based single-electron interferometer coupled to a fermionic sea
published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.97.045405
Physical Review B 97/4 2019-06-18
2018 Arnout Beckers, Farzan Jazaeri, Christian Enz
Cryogenic MOS Transistor Model
published pages: 3617-3625, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2854701
IEEE Transactions on Electron Devices 65/9 2019-06-18
2018 Andrea Corna, Léo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Laviéville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, Marc Sanquer
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot
published pages: , ISSN: 2056-6387, DOI: 10.1038/s41534-018-0059-1
npj Quantum Information 4/1 2019-06-18
2017 E. Ferraro, M. Fanciulli, M. De Michielis
Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment
published pages: , ISSN: 1570-0755, DOI: 10.1007/s11128-017-1729-1
Quantum Information Processing 16/11 2019-06-18
2018 E Ferraro, M Fanciulli, M De Michielis
Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
published pages: 115022, ISSN: 2399-6528, DOI: 10.1088/2399-6528/aaf088
Journal of Physics Communications 2/11 2019-06-18
2016 H. Bohuslavskyi, D. Kotekar-Patil, R. Maurand, A. Corna, S. Barraud, L. Bourdet, L. Hutin, Y.-M. Niquet, X. Jehl, S. De Franceschi, M. Vinet, M. Sanquer
Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
published pages: 193101, ISSN: 0003-6951, DOI: 10.1063/1.4966946
Applied Physics Letters 109/19 2019-06-18
2017 D. Kotekar-Patil, A. Corna, R. Maurand, A. Crippa, A. Orlov, S. Barraud, L. Hutin, M. Vinet, X. Jehl, S. De Franceschi, M. Sanquer
Pauli spin blockade in CMOS double quantum dot devices
published pages: 1600581, ISSN: 0370-1972, DOI: 10.1002/pssb.201600581
physica status solidi (b) 254/3 2019-06-18
2017 Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, Alexei O. Orlov, Patrick Fay, Romain Laviéville, Sylvain Barraud, Maud Vinet, Marc Sanquer, Silvano De Franceschi, Xavier Jehl
Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry
published pages: 1001-1006, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.6b04354
Nano Letters 17/2 2019-06-18
2018 Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba
Radio-Frequency Capacitive Gate-Based Sensing
published pages: , ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.10.014018
Physical Review Applied 10/1 2019-06-18
2016 R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi
A CMOS silicon spin qubit
published pages: 13575, ISSN: 2041-1723, DOI: 10.1038/ncomms13575
Nature Communications 7 2019-06-18
2016 A. C. Betz, M. L. V. Tagliaferri, M. Vinet, M. Broström, M. Sanquer, A. J. Ferguson, M. F. Gonzalez-Zalba
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
published pages: 203108, ISSN: 0003-6951, DOI: 10.1063/1.4950976
Applied Physics Letters 108/20 2019-06-18
2017 A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba
Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
published pages: 212101, ISSN: 0003-6951, DOI: 10.1063/1.4984224
Applied Physics Letters 110/21 2019-06-18
2018 Leo Bourdet, Louis Hutin, Benoit Bertrand, Andrea Corna, Heorhii Bohuslavskyi, Anthony Amisse, Alessandro Crippa, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bauerle, Tristan Meunier, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Yann-Michel Niquet, Maud Vinet
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
published pages: 5151-5156, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2870115
IEEE Transactions on Electron Devices 65/11 2019-05-23
2018 S. Schaal, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba
Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell
published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.9.054016
Physical Review Applied 9/5 2019-05-23
2018 J. Mansir, P. Conti, Z. Zeng, J. J. Pla, P. Bertet, M. W. Swift, C. G. Van de Walle, M. L. W. Thewalt, B. Sklenard, Y. M. Niquet, J. J. L. Morton
Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain
published pages: , ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.120.167701
Physical Review Letters 120/16 2019-05-07
2018 Imtiaz Ahmed, Anasua Chatterjee, Sylvain Barraud, John J. L. Morton, James A. Haigh, M. Fernando Gonzalez-Zalba
Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot
published pages: , ISSN: 2399-3650, DOI: 10.1038/s42005-018-0066-8
Communications Physics 1/1 2019-05-07
2018 S. Schaal, A. Rossi, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba
A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-05-07
2018 A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, L. Houtin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi
Gate-reflectometry dispersive readout of a spin qubit in silicon
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-05-07
2018 E. Ferraro, M. Fanciulli, M. De Michielis
Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises
published pages: , ISSN: 1570-0755, DOI: 10.1007/s11128-018-1896-8
Quantum Information Processing 17/6 2019-05-07
2018 D. J. Ibberson, L. Bourdet, J. C. Abadillo-Uriel, I. Ahmed, S. Barraud, M. J. Calderón, Y.-M. Niquet, M. F. Gonzalez-Zalba
Electric-field tuning of the valley splitting in silicon corner dots
published pages: 53104, ISSN: 0003-6951, DOI: 10.1063/1.5040474
Applied Physics Letters 113/5 2019-05-07
2018 Benjamin Venitucci, Léo Bourdet, Daniel Pouzada, Yann-Michel Niquet
Electrical manipulation of semiconductor spin qubits within the g -matrix formalism
published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.98.155319
Physical Review B 98/15 2019-05-07
2018 H. Bohuslavskyi, S. Barraud, V. Barral, M. Casse, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet
Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization
published pages: 3682-3688, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2859636
IEEE Transactions on Electron Devices 65/9 2019-05-07
2018 J. J. Pla, A. Bienfait, G. Pica, J. Mansir, F. A. Mohiyaddin, Z. Zeng, Y. M. Niquet, A. Morello, T. Schenkel, J. J. L. Morton, P. Bertet
Strain-Induced Spin-Resonance Shifts in Silicon Devices
published pages: , ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.9.044014
Physical Review Applied 9/4 2019-05-07
2018 Emma Mykkänen, Janne S. Lehtinen, Leif Grönberg, Andrey Shchepetov, Andrey V. Timofeev, David Gunnarsson, Antti Kemppinen, Antti J. Manninen, Mika Prunnila
Efficient thermionic operation and phonon isolation by a semiconductor-superconductor junction
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-05-07
2018 Léo Bourdet, Yann-Michel Niquet
All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.97.155433
Physical Review B 97/15 2019-05-07
2018 Ferraro, E.; Fanciulli, M.; De Michielis, M.
Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
published pages: , ISSN: 2511-9044, DOI:
Advanced Quantum Technologies 2019-05-07
2019 V. Mazzocchi, P.G. Sennikov, A.D. Bulanov, M.F. Churbanov, B. Bertrand, L. Hutin, J.P. Barnes, M.N. Drozdov, J.M. Hartmann, M. Sanquer
99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
published pages: 1-7, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2018.12.010
Journal of Crystal Growth 509 2019-05-07
2018 Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz
Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-05-07
2018 Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi
Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits
published pages: , ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.120.137702
Physical Review Letters 120/13 2019-05-07
2018 J S Lehtinen, A Kemppinen, E Mykkänen, M Prunnila, A J Manninen
Superconducting MoSi nanowires
published pages: 15002, ISSN: 0953-2048, DOI: 10.1088/1361-6668/aa954b
Superconductor Science and Technology 31/1 2019-05-07
2018 Arnout Beckers, Farzan Jazaeri, Christian Enz
Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
published pages: 1007-1018, ISSN: 2168-6734, DOI: 10.1109/JEDS.2018.2817458
IEEE Journal of the Electron Devices Society 6 2019-05-07
2018 Abdurakhimov, L. V.; Khan, S.; Panjwani, N. A.; Breeze, J. D.; Seki, S.; Tokura, Y.; Morton, J. J. L.; Kurebayashi, H.
Magnon-photon coupling in a non-collinear magnetic insulator Cu$_2$OSeO$_3$
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-05-07
2017 Leif Grönberg, Mikko Kiviranta, Visa Vesterinen, Janne Lehtinen, Slawomir Simbierowicz, Juho Luomahaara, Mika Prunnila, Juha Hassel
Side-wall spacer passivated sub- μ m Josephson junction fabrication process
published pages: 125016, ISSN: 0953-2048, DOI: 10.1088/1361-6668/aa9411
Superconductor Science and Technology 30/12 2019-05-07
2018 Arnout Beckers, Farzan Jazaeri, Christian Enz
Revised theoretical limit of the subthreshold swing in field-effect transistors
published pages: , ISSN: 2331-8422, DOI:
arXiv Online Repository 2019-05-07

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