Explore the words cloud of the SaSHa project. It provides you a very rough idea of what is the project "SaSHa" about.
The following table provides information about the project.
THE UNIVERSITY OF WARWICK
|Coordinator Country||United Kingdom [UK]|
|Total cost||997˙130 €|
|EC max contribution||997˙130 € (100%)|
1. H2020-EU.2.1.6. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies – Space)
|Duration (year-month-day)||from 2016-02-01 to 2018-01-31|
Take a look of project's partnership.
|1||THE UNIVERSITY OF WARWICK||UK (COVENTRY)||coordinator||300˙416.00|
|2||UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK||IE (Cork)||participant||252˙035.00|
|3||UNIVERSITE CATHOLIQUE DE LOUVAIN||BE (LOUVAIN LA NEUVE)||participant||224˙053.00|
|4||CAMBRIDGE MICROELECTRONICS LTD||UK (CAMBRIDGE)||participant||220˙625.00|
The SaSHa (Si on SiC for the Harsh Environment of Space) project will accelerate the development of an entirely new generation of power electronic semiconductor devices benefitting Space and several terrestrial applications. Proof of concept prototypes (up to TRL5) will be developed that incorporate a brand new Si on SiC substrate solution into state-of-the-art power electronic device architectures. The resulting power devices will be capable of working at voltage ratings from 50 to 600 V, in high radiation conditions and at temperatures up to 300°C, characteristics unavailable in the current power market, let alone for Space. By solving the so-called self-heating effect of state-of-the-art silicon-on-insulator electronics, this disruptive technology will offer: 1) significantly improved device efficiency with at least 50% less wasted power; 2) three times the power density; 3) a significant increase in the maximum operating temperature, by as much as 100°C and 4) a radiation tolerance to match the current state-of-the-art. These characteristics translate into a more efficient power system to boost on-board power and waste less heat. This reduces the burden on the cooling system saving mass and space on the spacecraft, and increasing mission length. Therefore, this is a technology enabling or benefitting several space technologies including high voltage solar arrays, electric propulsion, and many ancillary power conditioning applications. Furthermore, in the future, it will also find use in many terrestrial harsh environment applications including downhole drilling, aviation and automotive.
|Delivery of SOI for processing trials in WP3||Demonstrators, pilots, prototypes||2019-05-30 13:58:44|
|Delivery of final Si/SiC material for test device structures. Communication of interim physical characterisation informing WP3||Demonstrators, pilots, prototypes||2019-05-30 13:58:38|
|Delivery of initial Si/SiC material for test device structures. Communication of physical properties informing WP3||Demonstrators, pilots, prototypes||2019-05-30 13:58:47|
|Delivery of Si/SiC test device and their characteristics||Demonstrators, pilots, prototypes||2019-05-30 13:58:40|
|Delivery of Si/SiC LDMOS and LIGBT die for reliability and radiation testing in WP4||Demonstrators, pilots, prototypes||2019-05-30 13:58:46|
Take a look to the deliverables list in detail: detailed list of SaSHa deliverables.
|year||authors and title||journal||last update|
P.M. Gammon, C.W. Chan, F. Li, F. Gity, T. Trajkovic, V. Pathirana, D. Flandre, V. Kilchytska
Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
published pages: 69-74, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.10.020
|Materials Science in Semiconductor Processing 78||2019-06-18|
Chunwa Chan, Philip A. Mawby, Peter M. Gammon
Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation
published pages: 2442-2448, ISSN: 0018-9383, DOI: 10.1109/TED.2016.2550865
|IEEE Transactions on Electron Devices 63/6||2019-06-18|
Peter M. Gammon, Fan Li, C.W. Chan, Ana M. Sanchez, Steven A. Hindmarsh, Farzan Gity, Tanya Trajkovic, Valeriya Kilchytska, Vasantha Pathirana, Gianluca Camuso, Khaled Ben Ali, Denis Flandre, Philip A. Mawby, Julian W. Gardner
The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices
published pages: 747-750, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.897.747
|Materials Science Forum 897||2019-06-18|
P.M. Gammon, C.W. Chan, F. Gity, T. Trajkovic, V. Kilchytska, L. Fan, V. Pathirana, G. Camuso, K. Ben Ali, D. Flandre, P.A. Mawby, J.W. Gardner
Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications
published pages: 12003, ISSN: 2267-1242, DOI: 10.1051/e3sconf/20171612003
|E3S Web of Conferences 16||2019-06-18|
C. W. Chan, F. Li, A. Sanchez, P. A. Mawby, P. M. Gammon
Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling
published pages: 3713-3718, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2719898
|IEEE Transactions on Electron Devices 64/9||2019-06-18|
C.W. Chan, Fan Li, Philip A. Mawby, Peter M. Gammon
Numerical Study of Energy Capability of Si/SiC LDMOSFETs
published pages: 751-754, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.897.751
|Materials Science Forum 897||2019-06-18|
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The information about "SASHA" are provided by the European Opendata Portal: CORDIS opendata.
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