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SaSHa SIGNED

Si on SiC for the Harsh Environment of Space

Total Cost €

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EC-Contrib. €

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Partnership

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Project "SaSHa" data sheet

The following table provides information about the project.

Coordinator
THE UNIVERSITY OF WARWICK 

Organization address
address: Kirby Corner Road - University House
city: COVENTRY
postcode: CV4 8UW
website: www.warwick.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Project website http://sashaproject.eu/
 Total cost 997˙130 €
 EC max contribution 997˙130 € (100%)
 Programme 1. H2020-EU.2.1.6. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies – Space)
 Code Call H2020-COMPET-2015
 Funding Scheme RIA
 Starting year 2016
 Duration (year-month-day) from 2016-02-01   to  2018-01-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE UNIVERSITY OF WARWICK UK (COVENTRY) coordinator 300˙416.00
2    UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK IE (Cork) participant 252˙035.00
3    UNIVERSITE CATHOLIQUE DE LOUVAIN BE (LOUVAIN LA NEUVE) participant 224˙053.00
4    CAMBRIDGE MICROELECTRONICS LTD UK (CAMBRIDGE) participant 220˙625.00

Map

 Project objective

The SaSHa (Si on SiC for the Harsh Environment of Space) project will accelerate the development of an entirely new generation of power electronic semiconductor devices benefitting Space and several terrestrial applications. Proof of concept prototypes (up to TRL5) will be developed that incorporate a brand new Si on SiC substrate solution into state-of-the-art power electronic device architectures. The resulting power devices will be capable of working at voltage ratings from 50 to 600 V, in high radiation conditions and at temperatures up to 300°C, characteristics unavailable in the current power market, let alone for Space. By solving the so-called self-heating effect of state-of-the-art silicon-on-insulator electronics, this disruptive technology will offer: 1) significantly improved device efficiency with at least 50% less wasted power; 2) three times the power density; 3) a significant increase in the maximum operating temperature, by as much as 100°C and 4) a radiation tolerance to match the current state-of-the-art. These characteristics translate into a more efficient power system to boost on-board power and waste less heat. This reduces the burden on the cooling system saving mass and space on the spacecraft, and increasing mission length. Therefore, this is a technology enabling or benefitting several space technologies including high voltage solar arrays, electric propulsion, and many ancillary power conditioning applications. Furthermore, in the future, it will also find use in many terrestrial harsh environment applications including downhole drilling, aviation and automotive.

 Deliverables

List of deliverables.
Delivery of SOI for processing trials in WP3 Demonstrators, pilots, prototypes 2019-05-30 13:58:44
Delivery of final Si/SiC material for test device structures. Communication of interim physical characterisation informing WP3 Demonstrators, pilots, prototypes 2019-05-30 13:58:38
Delivery of initial Si/SiC material for test device structures. Communication of physical properties informing WP3 Demonstrators, pilots, prototypes 2019-05-30 13:58:47
Delivery of Si/SiC test device and their characteristics Demonstrators, pilots, prototypes 2019-05-30 13:58:40
Delivery of Si/SiC LDMOS and LIGBT die for reliability and radiation testing in WP4 Demonstrators, pilots, prototypes 2019-05-30 13:58:46

Take a look to the deliverables list in detail:  detailed list of SaSHa deliverables.

 Publications

year authors and title journal last update
List of publications.
2018 P.M. Gammon, C.W. Chan, F. Li, F. Gity, T. Trajkovic, V. Pathirana, D. Flandre, V. Kilchytska
Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
published pages: 69-74, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.10.020
Materials Science in Semiconductor Processing 78 2019-06-18
2016 Chunwa Chan, Philip A. Mawby, Peter M. Gammon
Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation
published pages: 2442-2448, ISSN: 0018-9383, DOI: 10.1109/TED.2016.2550865
IEEE Transactions on Electron Devices 63/6 2019-06-18
2017 Peter M. Gammon, Fan Li, C.W. Chan, Ana M. Sanchez, Steven A. Hindmarsh, Farzan Gity, Tanya Trajkovic, Valeriya Kilchytska, Vasantha Pathirana, Gianluca Camuso, Khaled Ben Ali, Denis Flandre, Philip A. Mawby, Julian W. Gardner
The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices
published pages: 747-750, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.897.747
Materials Science Forum 897 2019-06-18
2017 P.M. Gammon, C.W. Chan, F. Gity, T. Trajkovic, V. Kilchytska, L. Fan, V. Pathirana, G. Camuso, K. Ben Ali, D. Flandre, P.A. Mawby, J.W. Gardner
Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications
published pages: 12003, ISSN: 2267-1242, DOI: 10.1051/e3sconf/20171612003
E3S Web of Conferences 16 2019-06-18
2017 C. W. Chan, F. Li, A. Sanchez, P. A. Mawby, P. M. Gammon
Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling
published pages: 3713-3718, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2719898
IEEE Transactions on Electron Devices 64/9 2019-06-18
2017 C.W. Chan, Fan Li, Philip A. Mawby, Peter M. Gammon
Numerical Study of Energy Capability of Si/SiC LDMOSFETs
published pages: 751-754, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.897.751
Materials Science Forum 897 2019-06-18

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