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3DAM SIGNED

3D Advanced Metrology and materials for advanced devices

Total Cost €

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EC-Contrib. €

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Partnership

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Project "3DAM" data sheet

The following table provides information about the project.

Coordinator
FEI ELECTRON OPTICS BV 

Organization address
address: ACHTSEWEG NOORD GEBOUW AAE 5
city: EINDHOVEN
postcode: 5651 GG
website: www.fei.com

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Netherlands [NL]
 Project website https://www.ecsel.eu/projects/3dam
 Total cost 23˙055˙897 €
 EC max contribution 6˙463˙826 € (28%)
 Programme 1. H2020-EU.2.1.1.7. (ECSEL)
 Code Call H2020-ECSEL-2015-1-RIA-two-stage
 Funding Scheme ECSEL-RIA
 Starting year 2016
 Duration (year-month-day) from 2016-04-01   to  2019-03-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    FEI ELECTRON OPTICS BV NL (EINDHOVEN) coordinator 1˙110˙812.00
2    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM BE (LEUVEN) participant 873˙666.00
3    APPLIED MATERIALS ISRAEL LTD IL (REHOVOT) participant 740˙625.00
4    NEDERLANDSE ORGANISATIE VOOR TOEGEPAST NATUURWETENSCHAPPELIJK ONDERZOEK TNO NL (DEN HAAG) participant 628˙813.00
5    NOVA MEASURING INSTRUMENTS LTD IL (REHOVOT) participant 600˙000.00
6    SEMILAB FELVEZETO FIZIKAI LABORATORIUM RESZVENYTARSASAG HU (BUDAPEST) participant 531˙250.00
7    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) participant 525˙062.00
8    BRUKER JV ISRAEL LTD IL (MIGDAL HAEMEK) participant 381˙093.00
9    CAMECA FR (Gennevilliers) participant 344˙562.00
10    FEI SAS FR (MERIGNAC) participant 207˙500.00
11    DANMARKS TEKNISKE UNIVERSITET DK (KGS LYNGBY) participant 191˙258.00
12    TECHNISCHE UNIVERSITEIT EINDHOVEN NL (EINDHOVEN) participant 145˙179.00
13    ADAMA INNOVATIONS LIMITED IE (DUBLIN) participant 90˙810.00
14    CAPRES AS DK (KGS. LYNGBY) participant 77˙474.00
15    APPLIED MATERIALS FRANCE FR (BERNIN) participant 15˙718.00
16    ATTOLIGHT SA CH (LAUSANNE) participant 0.00
17    STMICROELECTRONICS CROLLES 2 SAS FR (CROLLES) participant 0.00

Map

 Project objective

The objective of the 3DAM project is to develop a new generation of metrology and characterization tools and methodologies enabling the development of the next semiconductor technology nodes. As nano-electronics technology is moving beyond the boundaries of (strained) silicon in planar or finFETs, new 3D device architectures and new materials bring major metrology and characterization challenges which cannot be met by pushing the present techniques to their limits. 3DAM will be a path-finding project which supports and complements several existing and future ECSEL pilot-line projects and is linked to the MASP area 7.1 (subsection More Moore). Innovative demonstrators and methodologies will be built and evaluated within the themes of metrology and characterization of 3D device architectures and new materials, across the full IC manufacturing cycle from Front to Back-End-Of-Line. 3D structural metrology and defect analysis techniques will be developed and correlated to address challenges around 3D CD, strain and crystal defects at the nm scale. 3D compositional analysis and electrical properties will be investigated with special attention to interfaces, alloys and 2D materials. The project will develop new workflows combining different technologies for more reliable and faster results; fit for use in future semiconductor processes.

The consortium includes major European semiconductor equipment companies in the area of metrology and characterization. The link to future needs of the industry, as well as critical evaluation of concepts and demonstrators, is ensured by the participation of IMEC and LETI. The project will directly increase the competitiveness of the strong Europe-based semiconductor Equipment industry. Closely connected European IC manufacturers will benefit by accelerated R&D and process ramp-up. The project will generate technologies essential for future semiconductor processes and for the applications enabled by the new technology nodes.

 Deliverables

List of deliverables.
Workshops year 3 and publication of presented material Websites, patent fillings, videos etc. 2020-04-23 03:10:52
Workshops year 2 and publication of presented material Websites, patent fillings, videos etc. 2020-04-23 03:10:52
Workshops year 1 and publication of presented material Websites, patent fillings, videos etc. 2020-04-23 03:10:52

Take a look to the deliverables list in detail:  detailed list of 3DAM deliverables.

 Publications

year authors and title journal last update
List of publications.
2018 Patrick R. Whelan, Vishal Panchal, Dirch H. Petersen, David M. A. Mackenzie, Christos Melios, Iwona Pasternak, John Gallop, Frederik W. Østerberg, Peter U. Jepsen, Wlodek Strupinski, Olga Kazakova, Peter Bøggild
Electrical Homogeneity Mapping of Epitaxial Graphene on Silicon Carbide
published pages: 31641-31647, ISSN: 1944-8244, DOI: 10.1021/acsami.8b11428
ACS Applied Materials & Interfaces 10/37 2020-04-23
2018 J. Bogdanowicz et al.
Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe
published pages: , ISSN: 1862-6319, DOI:
physica status solidi (a) volume 215 (6) 2018 2020-04-23
2017 V. Vandalon, A.A. Bol, W.M.M. Kessels
Second-harmonic generation and Raman spectroscopy probing charge density and orientation of atomic-layer deposited MoS2
published pages: , ISSN: , DOI:
Material Research Seminar 2020-04-23
2018 Joyce Roque, Georges Beainy, Névine Rochat, Nicolas Bernier, Sylvain David, Jérémy Moeyaert, Mickael Martin, Thierry Baron, Jean-Luc Rouvière
Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques
published pages: 42901, ISSN: 2166-2754, DOI: 10.1116/1.5033363
Journal of Vacuum Science & Technology B 36/4 2020-04-23
2018 David M. A. Mackenzie, Patrick R. Whelan, Peter Bøggild, Peter Uhd Jepsen, Albert Redo-Sanchez, David Etayo, Norbert Fabricius, Dirch Hjorth Petersen
Quality assessment of terahertz time-domain spectroscopy transmission and reflection modes for graphene conductivity mapping
published pages: 9220, ISSN: 1094-4087, DOI: 10.1364/oe.26.009220
Optics Express 26/7 2020-04-23
2017 H. Bender, F. Seidel, P. Favia, O. Richard, W. Vandervorst
X-ray absorption in pillar shaped transmission electron microscopy specimens
published pages: 58-68, ISSN: 0304-3991, DOI: 10.1016/j.ultramic.2017.03.006
Ultramicroscopy 177 2020-04-23
2017 Thomas Nuytten, Janusz Bogdanowicz, Thomas Hantschel, Andreas Schulze, Paola Favia, Hugo Bender, Ingrid De Wolf, Wilfried Vandervorst
Advanced Raman Spectroscopy Using Nanofocusing of Light 
published pages: 1600612, ISSN: 1438-1656, DOI: 10.1002/adem.201600612
Advanced Engineering Materials 2020-04-23
2017 Zhichao Zhong, Bart Goris, Remco Schoenmakers, Sara Bals, K. Joost Batenburg
A bimodal tomographic reconstruction technique combining EDS-STEM and HAADF-STEM
published pages: 35-45, ISSN: 0304-3991, DOI: 10.1016/j.ultramic.2016.12.008
Ultramicroscopy 174 2020-04-23
2017 A Schulze, R Loo, P Ryan, M Wormington, P Favia, L Witters, N Collaert, H Bender, W Vandervorst, M Caymax
Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures
published pages: 145703, ISSN: 0957-4484, DOI: 10.1088/1361-6528/aa5fbb
Nanotechnology 28/14 2020-04-23

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