Explore the words cloud of the 3DAM project. It provides you a very rough idea of what is the project "3DAM" about.
The following table provides information about the project.
FEI ELECTRON OPTICS BV
|Coordinator Country||Netherlands [NL]|
|Total cost||23˙055˙897 €|
|EC max contribution||6˙463˙826 € (28%)|
1. H2020-EU.126.96.36.199. (ECSEL)
|Duration (year-month-day)||from 2016-04-01 to 2019-03-31|
Take a look of project's partnership.
|1||FEI ELECTRON OPTICS BV||NL (EINDHOVEN)||coordinator||1˙110˙812.00|
|2||INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM||BE (LEUVEN)||participant||873˙666.00|
|3||APPLIED MATERIALS ISRAEL LTD||IL (REHOVOT)||participant||740˙625.00|
|4||NEDERLANDSE ORGANISATIE VOOR TOEGEPAST NATUURWETENSCHAPPELIJK ONDERZOEK TNO||NL (DEN HAAG)||participant||628˙813.00|
|5||NOVA MEASURING INSTRUMENTS LTD||IL (REHOVOT)||participant||600˙000.00|
|6||SEMILAB FELVEZETO FIZIKAI LABORATORIUM RESZVENYTARSASAG||HU (BUDAPEST)||participant||531˙250.00|
|7||COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES||FR (PARIS 15)||participant||525˙062.00|
|8||BRUKER JV ISRAEL LTD||IL (MIGDAL HAEMEK)||participant||381˙093.00|
|10||FEI SAS||FR (MERIGNAC)||participant||207˙500.00|
|11||DANMARKS TEKNISKE UNIVERSITET||DK (KGS LYNGBY)||participant||191˙258.00|
|12||TECHNISCHE UNIVERSITEIT EINDHOVEN||NL (EINDHOVEN)||participant||145˙179.00|
|13||ADAMA INNOVATIONS LIMITED||IE (DUBLIN)||participant||90˙810.00|
|14||CAPRES AS||DK (KGS. LYNGBY)||participant||77˙474.00|
|15||APPLIED MATERIALS FRANCE||FR (BERNIN)||participant||15˙718.00|
|16||ATTOLIGHT SA||CH (LAUSANNE)||participant||0.00|
|17||STMICROELECTRONICS CROLLES 2 SAS||FR (CROLLES)||participant||0.00|
The objective of the 3DAM project is to develop a new generation of metrology and characterization tools and methodologies enabling the development of the next semiconductor technology nodes. As nano-electronics technology is moving beyond the boundaries of (strained) silicon in planar or finFETs, new 3D device architectures and new materials bring major metrology and characterization challenges which cannot be met by pushing the present techniques to their limits. 3DAM will be a path-finding project which supports and complements several existing and future ECSEL pilot-line projects and is linked to the MASP area 7.1 (subsection More Moore). Innovative demonstrators and methodologies will be built and evaluated within the themes of metrology and characterization of 3D device architectures and new materials, across the full IC manufacturing cycle from Front to Back-End-Of-Line. 3D structural metrology and defect analysis techniques will be developed and correlated to address challenges around 3D CD, strain and crystal defects at the nm scale. 3D compositional analysis and electrical properties will be investigated with special attention to interfaces, alloys and 2D materials. The project will develop new workflows combining different technologies for more reliable and faster results; fit for use in future semiconductor processes.
The consortium includes major European semiconductor equipment companies in the area of metrology and characterization. The link to future needs of the industry, as well as critical evaluation of concepts and demonstrators, is ensured by the participation of IMEC and LETI. The project will directly increase the competitiveness of the strong Europe-based semiconductor Equipment industry. Closely connected European IC manufacturers will benefit by accelerated R&D and process ramp-up. The project will generate technologies essential for future semiconductor processes and for the applications enabled by the new technology nodes.
|Workshops year 3 and publication of presented material||Websites, patent fillings, videos etc.||2020-04-23 03:10:52|
|Workshops year 2 and publication of presented material||Websites, patent fillings, videos etc.||2020-04-23 03:10:52|
|Workshops year 1 and publication of presented material||Websites, patent fillings, videos etc.||2020-04-23 03:10:52|
Take a look to the deliverables list in detail: detailed list of 3DAM deliverables.
|year||authors and title||journal||last update|
Patrick R. Whelan, Vishal Panchal, Dirch H. Petersen, David M. A. Mackenzie, Christos Melios, Iwona Pasternak, John Gallop, Frederik W. Ã˜sterberg, Peter U. Jepsen, Wlodek Strupinski, Olga Kazakova, Peter BÃ¸ggild
Electrical Homogeneity Mapping of Epitaxial Graphene on Silicon Carbide
published pages: 31641-31647, ISSN: 1944-8244, DOI: 10.1021/acsami.8b11428
|ACS Applied Materials & Interfaces 10/37||2020-04-23|
J. Bogdanowicz et al.
Widthâ€Dependent Sheet Resistance of Nanometerâ€Wide Si Fins as Measured with Micro Fourâ€Point Probe
published pages: , ISSN: 1862-6319, DOI:
|physica status solidi (a) volume 215 (6) 2018||2020-04-23|
V. Vandalon, A.A. Bol, W.M.M. Kessels
Second-harmonic generation and Raman spectroscopy probing charge density and orientation of atomic-layer deposited MoS2
published pages: , ISSN: , DOI:
|Material Research Seminar||2020-04-23|
Joyce Roque, Georges Beainy, NÃ©vine Rochat, Nicolas Bernier, Sylvain David, JÃ©rÃ©my Moeyaert, Mickael Martin, Thierry Baron, Jean-Luc RouviÃ¨re
Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques
published pages: 42901, ISSN: 2166-2754, DOI: 10.1116/1.5033363
|Journal of Vacuum Science & Technology B 36/4||2020-04-23|
David M. A. Mackenzie, Patrick R. Whelan, Peter BÃ¸ggild, Peter Uhd Jepsen, Albert Redo-Sanchez, David Etayo, Norbert Fabricius, Dirch Hjorth Petersen
Quality assessment of terahertz time-domain spectroscopy transmission and reflection modes for graphene conductivity mapping
published pages: 9220, ISSN: 1094-4087, DOI: 10.1364/oe.26.009220
|Optics Express 26/7||2020-04-23|
H. Bender, F. Seidel, P. Favia, O. Richard, W. Vandervorst
X-ray absorption in pillar shaped transmission electron microscopy specimens
published pages: 58-68, ISSN: 0304-3991, DOI: 10.1016/j.ultramic.2017.03.006
Thomas Nuytten, Janusz Bogdanowicz, Thomas Hantschel, Andreas Schulze, Paola Favia, Hugo Bender, Ingrid De Wolf, Wilfried Vandervorst
Advanced Raman Spectroscopy Using Nanofocusing of Lightâ€‰
published pages: 1600612, ISSN: 1438-1656, DOI: 10.1002/adem.201600612
|Advanced Engineering Materials||2020-04-23|
Zhichao Zhong, Bart Goris, Remco Schoenmakers, Sara Bals, K. Joost Batenburg
A bimodal tomographic reconstruction technique combining EDS-STEM and HAADF-STEM
published pages: 35-45, ISSN: 0304-3991, DOI: 10.1016/j.ultramic.2016.12.008
A Schulze, R Loo, P Ryan, M Wormington, P Favia, L Witters, N Collaert, H Bender, W Vandervorst, M Caymax
Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures
published pages: 145703, ISSN: 0957-4484, DOI: 10.1088/1361-6528/aa5fbb
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The information about "3DAM" are provided by the European Opendata Portal: CORDIS opendata.
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