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Milli-Tech SIGNED

Milli-Volt Switch Technologies for Energy Efficient Computation and Sensing

Total Cost €


EC-Contrib. €






 Milli-Tech project word cloud

Explore the words cloud of the Milli-Tech project. It provides you a very rough idea of what is the project "Milli-Tech" about.

metal    active    vo2    switch    charge    von    everything    slope    band    sensed    abrupt    energy    circuits    breakthroughs    ir    detectors    voltages    revolution    tech    technological    functions    sensors    precise    electronic    decade    van    lattice    fets    materials    ultra    solving    hybrid    dichalcogenides    limit    power    10mv    tunneling    biosensing    neumann    digital    device    bit    combining    rewarding    principles    2d    pixel    function    below    tunnel    platform    der    capacitance    thermal    sub    millivolt    slopes    solid    terahertz    risk    internet    computed    sensing    mosfet    additive    ioe    transduction    100mv    boosters    physics    steep    analog    insulator    room    lowering    classes    sensitivity    transition    ics    plans    100x    switching    dramatically    heterostructure    cmos    sensitive    blocks    60mv    temperature    of    switches    super    nanoelectronics    waals    filter    negative    fundamental    milli    millivolts    efficient    computation    serving    imagers    operation    voltage    gesn    demonstrators    efficiency    logic    significantly    subthreshold    architectures    tmd   

Project "Milli-Tech" data sheet

The following table provides information about the project.


Organization address
address: BATIMENT CE 3316 STATION 1
postcode: 1015

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Switzerland [CH]
 Project website
 Total cost 2˙929˙875 €
 EC max contribution 2˙929˙875 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2015-AdG
 Funding Scheme ERC-ADG
 Starting year 2016
 Duration (year-month-day) from 2016-06-01   to  2021-05-31


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 


 Project objective

The Milli-Tech proposal aims at a novel technology platform serving both computation and sensing: electronic switch architectures, called steep slope switches, exploiting new device physics and concepts in emerging 2D materials to achieve operation at voltages below 100 millivolts. Such switches will have a subthreshold slope below 10mV/decade, significantly more abrupt than MOSFET thermal limit of 60mV/decade at room temperature and in great advance to any beyond CMOS switches. Such characteristics will dramatically improve both the energy efficiency of logic circuits and the transduction sensitivity for many classes of sensors. The project will develop a technological platform called ‘millivolt technology’ focusing on low power digital and sensing/analog electronic functions exploiting steep slopes, with the goal of lowering the energy per useful function (computed and sensed bit of information) by a factor of 100x. Such ultra-low operation voltage will contribute to solving major challenges of nanoelectronics such as power issues and it will enable energy efficient super-sensitive sensors for Internet-of-Everything (IoE). Milli-Tech includes fundamental research on new solid-state steep slope device concepts: heterostructure tunnel FETs in 2D Transition-Metal-Dichalcogenides (TMD), 2D Van der Waals super-lattice energy filter switch and hybrid architectures combining two switching principles: band-to-band-tunneling and metal-insulator-transition or negative capacitance in VO2, used as additive technology boosters. Milli-Tech plans breakthroughs by precise demonstrators: (i) energy efficient computation blocks for Von-Neumann ICs at sub-100mV, (ii) Active Pixel Sensors based on 2D TMD/GeSn tunnel FETs for IR imagers, (iii) Terahertz detectors based on hybrid 2D VO2/TMD switches (iii) ultra-sensitive 2D steep slope charge detectors for biosensing. The high-risk ‘millivolt technology’ will be highly rewarding by enabling the energy efficient revolution for IoE.


year authors and title journal last update
List of publications.
2019 Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Erick Garcia Cordero, Johan Longo, Fabien Wildhaber, Guillaume Herment, Höel Guérin, Adrian Mihai Ionescu
Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors
published pages: 2039-2047, ISSN: 2379-3694, DOI: 10.1021/acssensors.9b00597
ACS Sensors 4/8 2020-02-19
2018 Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Gia V Luong, Qing-Tai Zhao, Siegfried Mantl, Adrian M Ionescu
Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
published pages: 95202, ISSN: 0957-4484, DOI: 10.1088/1361-6528/aaa590
Nanotechnology 29/9 2019-06-13
2017 E. A. Casu, A. A. Muller, M. Fernandez-Bolanos, A. Fumarola, A. Krammer, A. Schuler, A. M. Ionescu
Vanadium Oxide bandstop tunable filter for Ka frequency bands based on a novel reconfigurable spiral shape defected ground plane CPW
published pages: 1-1, ISSN: 2169-3536, DOI: 10.1109/ACCESS.2018.2795463
IEEE Access 2019-06-13
2018 Erick Garcia-Cordero, Francesco Bellando, Junrui Zhang, Fabien Wildhaber, Johan Longo, Hoël Guérin, Adrian M. Ionescu
Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers
published pages: 12646-12656, ISSN: 1936-0851, DOI: 10.1021/acsnano.8b07413
ACS Nano 12/12 2019-04-18

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