Explore the words cloud of the PICTURE project. It provides you a very rough idea of what is the project "PICTURE" about.
The following table provides information about the project.
|Coordinator Country||France [FR]|
|Total cost||4˙050˙477 €|
|EC max contribution||3˙924˙532 € (97%)|
1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
|Duration (year-month-day)||from 2018-01-01 to 2020-12-31|
Take a look of project's partnership.
|1||III-V LAB||FR (PALAISEAU CEDEX)||coordinator||793˙617.00|
|2||COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES||FR (PARIS 15)||participant||880˙093.00|
|3||UNIVERSITY OF SOUTHAMPTON||UK (SOUTHAMPTON)||participant||586˙666.00|
|4||INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM||BE (LEUVEN)||participant||379˙687.00|
|5||UNIVERSITY COLLEGE LONDON||UK (LONDON)||participant||369˙287.00|
|6||UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK||IE (Cork)||participant||325˙145.00|
|7||ARGOTECH AS||CZ (NACHOD)||participant||297˙255.00|
|8||NOKIA BELL LABS FRANCE||FR (NOZAY)||participant||292˙780.00|
The objective of PICTURE project is to develop a photonic integration technology by bonding multi-III-V-dies of different epitaxial stacks to SOI wafers with a thinner and uniform dielectric bonding layer. This heterogeneous integration platform will enable higher performance lasers and photo-detectors using the optimized III-V dies. In addition, the thinner bonding layer will lead to record performance MOSCAP III-V/Si modulators, and to a new generation of wavelength tunable distributed feedback lasers. Moreover the full process including SOI process, bonding, III-V and back-end process will be made on a 200mm R&D CMOS line, leading to higher yield, smaller footprint and lower cost PICs. Two types of PICs with a total capacity of 400Gb/s will be developed, packaged and validated in system configuration. In parallel, PICTURE project will develop direct growth of high performance quantum-dot lasers and selective area growth on bonded templates for high density future generation of PICs. The project is coordinated by III-V Lab, and includes University of Southampton, CEA, University College London, Imec, Tyndall, Argotech and Nokia Bell Labs. The consortium is highly complementary, covering all skills required to achieve the project objectives: growth of semiconductor materials, silicon process and III-V process, design and characterization of PICs, prototyping and assessment of PICs in high bit rate digital communication systems: Apart from the adequacy of the consortium to achieve collectively the project objectives, the consortium partners have the potential to set up a comprehensive supply chain for the future exploitation of the project results, either by exploiting the results “in house” or by setting up suitable partnerships.
|First press release on PICTURE project||Documents, reports||2019-10-29 14:24:53|
Take a look to the deliverables list in detail: detailed list of PICTURE deliverables.
|year||authors and title||journal||last update|
Claire Besancon, Jean Decobert, Jean-Pierre Le Goec, Nicolas Vaissiere, CÃ©cilia DuprÃ©, Viviane Muffato, Frank Fournel, Christophe Jany, Franck Bassani, Sylvain David and Thierry Baron
High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate
published pages: , ISSN: , DOI:
|Proceedings of Compound Semiconductor Week 2019 Yearly||2019-09-05|
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