HiPoSwitch
GaN-based normally-off high power switching transistor for efficient power converters
| Coordinatore | FORSCHUNGSVERBUND BERLIN E.V.
Organization address
address: Rudower Chaussee 17 contact info |
| Nazionalità Coordinatore | Germany [DE] |
| Totale costo | 5˙573˙196 € |
| EC contributo | 3˙578˙938 € |
| Programma | FP7-ICT
Specific Programme "Cooperation": Information and communication technologies |
| Code Call | FP7-ICT-2011-7 |
| Funding Scheme | CP |
| Anno di inizio | 2011 |
| Periodo (anno-mese-giorno) | 2011-09-01 - 2015-02-28 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
FORSCHUNGSVERBUND BERLIN E.V.
Organization address
address: Rudower Chaussee 17 contact info |
DE (BERLIN) | coordinator | 0.00 |
| 2 |
AIXTRON SE
Organization address
address: KAISERSTRASSE 98 contact info |
DE (HERZOGENRATH) | participant | 0.00 |
| 3 |
ARTESYN AUSTRIA GMBH & CO KG
Organization address
address: ALTMANNSDORFERSTRASSE 104 contact info |
AT (WIEN) | participant | 0.00 |
| 4 |
EPIGAN NV
Organization address
address: Kempische Steenweg 293 contact info |
BE (Hasselt) | participant | 0.00 |
| 5 |
INFINEON TECHNOLOGIES AUSTRIA AG
Organization address
address: SIEMENSSTRASSE 2 contact info |
AT (VILLACH) | participant | 0.00 |
| 6 |
Institute of Electrical Engineering, Slovak Academy of Sciences
Organization address
address: Dubravska 9 contact info |
SK (Bratislava) | participant | 0.00 |
| 7 |
TECHNISCHE UNIVERSITAET WIEN
Organization address
address: KARLSPLATZ 13 contact info |
AT (WIEN) | participant | 0.00 |
| 8 |
UNIVERSITA DEGLI STUDI DI PADOVA
Organization address
address: VIA 8 FEBBRAIO 1848 2 contact info |
IT (PADOVA) | participant | 0.00 |
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Obiettivo del progetto (Objective)
Highly efficient power electronics is needed for low volume and low weight future power conversion systems. The proposed project aims for the exploitation of novel gallium nitride (GaN) transistors for advanced switched power supplies. High voltage normally-off GaN power devices on Si substrates in vertical device architecture will be developed and its technology transferred to an European industrial environment. The devices are planned to reliably operate at elevated junction temperatures up to 225°C. The project covers the full value added chain from substrate technology and epitaxy to complete power electronic system prototypes. It brings together experienced partners in automotive technology, power electronic system and circuit design, power semiconductor technology, high temperature packaging technologies, GaN power device technology including GaN on Si epitaxy as well as sophisticated device characterization and reliability evaluation techniques. Therefore very good prospects for a successful realization of the project targets and for a competitive implementation of the new devices in an industrial environment are seen.
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