DOTFIVE

Towards 0.5 Terahertz Silicon/Germanium Heterojunction Bipolar Technology

 Coordinatore STMICROELECTRONICS S.A. 

 Organization address address: FTM - Rue Jean Monnet 850
city: CROLLES
postcode: 38920

contact info
Titolo: Mr
Nome: Dominique
Cognome: THOMAS
Email: send email
Telefono: +33 4 76926327
Fax: +33 4 76088133

 Nazionalità Coordinatore France [FR]
 Totale costo 14˙740˙480 €
 EC contributo 9˙699˙969 €
 Programma FP7-ICT
Specific Programme "Cooperation": Information and communication technologies
 Code Call FP7-ICT-2007-1
 Funding Scheme CP
 Anno di inizio 2008
 Periodo (anno-mese-giorno) 2008-02-01   -   2011-07-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    STMICROELECTRONICS S.A.

 Organization address address: FTM - Rue Jean Monnet 850
city: CROLLES
postcode: 38920

contact info
Titolo: Mr
Nome: Dominique
Cognome: THOMAS
Email: send email
Telefono: +33 4 76926327
Fax: +33 4 76088133

FR (CROLLES) coordinator 0.00
2    ALMA CONSULTING GROUP SAS

 Organization address address: Domaine des Bois d'Houlbec
city: HOULBEC COCHEREL
postcode: 27120

contact info
Titolo: Mr
Nome: Nicolas
Cognome: MARIN
Email: send email
Telefono: +33 472 35 8030
Fax: +33 472 35 8031

FR (HOULBEC COCHEREL) participant 0.00
3    BERGISCHE UNIVERSITAET WUPPERTAL

 Organization address address: GAUSS-STRASSE
city: WUPPERTAL
postcode: 42119

contact info
Titolo: Mrs
Nome: Irina
Cognome: Berger
Email: send email
Telefono: -4393019

DE (WUPPERTAL) participant 0.00
4    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

 Organization address address: Rue Michel -Ange
city: PARIS
postcode: 75794

contact info
Nome: N/A
Cognome: N/A
Email: send email
Telefono: +00 0 000000

FR (PARIS) participant 0.00
5    IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK

 Organization address address: IM TECHNOLOGIEPARK
city: FRANKFURT (ODER)
postcode: 15236

contact info
Titolo: Mr
Nome: Uwe
Cognome: George
Email: send email
Telefono: -5575997
Fax: -5575998

DE (FRANKFURT (ODER)) participant 0.00
6    INFINEON TECHNOLOGIES AG

 Organization address address: Am Campeon 1-12
city: Neubiberg
postcode: 85579

contact info
Titolo: Mr.
Nome: Bernhard
Cognome: Scholz
Email: send email
Telefono: -23422379
Fax: 49892300000000

DE (Neubiberg) participant 0.00
7    Institut polytechnique de Bordeaux

 Organization address address: RUE ROBERT ESCARPIT
city: PESSAC
postcode: 33600

contact info
Titolo: Ms.
Nome: Nathalie
Cognome: Dupont
Email: send email
Telefono: +33 5 40 00 62 53
Fax: +33 5 56 84 21 80

FR (PESSAC) participant 0.00
8    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW

 Organization address address: Kapeldreef
city: LEUVEN
postcode: 3001

contact info
Titolo: Mrs.
Nome: Christine
Cognome: Van Houtven
Email: send email
Telefono: +32-16-281 613
Fax: +32-16-281 812

BE (LEUVEN) participant 0.00
9    STMICROELECTRONICS CROLLES 2 SAS

 Organization address address: RUE JEAN MONNET 850
city: CROLLES
postcode: 38920

contact info
Titolo: Mr.
Nome: Dominique
Cognome: THOMAS
Email: send email
Telefono: -76926298
Fax: -76088104

FR (CROLLES) participant 0.00
10    TECHNISCHE UNIVERSITAET DRESDEN

 Organization address address: HELMHOLTZSTRASSE
city: DRESDEN
postcode: 1069

contact info
Titolo: Ms.
Nome: Christin
Cognome: Jung
Email: send email
Telefono: 4935150000000
Fax: 4935150000000

DE (DRESDEN) participant 0.00
11    UNIVERSITA DEGLI STUDI DI NAPOLI FEDERICO II.

 Organization address address: Corso Umberto I
city: NAPOLI
postcode: 80138

contact info
Titolo: Dr
Nome: MArina
Cognome: Cugnin
Email: send email
Telefono: +39(0)817683767
Fax: +39(0)815934448

IT (NAPOLI) participant 0.00
12    UNIVERSITAET DER BUNDESWEHR MUENCHEN.

 Organization address address: Werner-Heisenberg-Weg
city: NEUBIBERG
postcode: 85579

contact info
Titolo: Mr
Nome: Hans
Cognome: Lerch
Email: send email
Telefono: 498960000000
Fax: -60042064

DE (NEUBIBERG) participant 0.00
13    UNIVERSITAET LINZ

 Organization address address: ALTENBERGERSTRASSE 69
city: LINZ
postcode: 4040

contact info
Titolo: Prof.
Nome: Andreas
Cognome: Springer
Email: send email
Telefono: +43 70 24689710
Fax: +43 70 24689712

AT (LINZ) participant 0.00
14    UNIVERSITAET SIEGEN

 Organization address address: HERRENGARTEN
city: SIEGEN
postcode: 57072

contact info
Titolo: Dr.
Nome: Iris
Cognome: Körver
Email: send email
Telefono: +49 271 7404846
Fax: +49 27174054846

DE (SIEGEN) participant 0.00
15    UNIVERSITE DE BORDEAUX I

 Organization address address: 351 Cours de la Liberation
city: TALENCE
postcode: 33405

contact info
Nome: N/A
Cognome: N/A
Email: send email
Telefono: +00 0 000000

FR (TALENCE) participant 0.00
16    UNIVERSITE PARIS-SUD

 Organization address address: Rue Georges Clemenceau
city: ORSAY
postcode: 91405

contact info
Titolo: Mrs
Nome: Michèle
Cognome: HAMON
Email: send email
Telefono: 33 1 69157046
Fax: 33 1 69155599

FR (ORSAY) participant 0.00
17    XMOD TECHNOLOGIES

 Organization address address: PARC SCIENTIFIQUE UNITEC 2,DOMAINE DU HAUT CARRE
city: TALENCE
postcode: 33400

contact info
Titolo: DR.
Nome: BERTRAND
Cognome: ARDOUIN
Email: send email
Telefono: +33 5 40003498
Fax: +33 5 40003444

FR (TALENCE) participant 0.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

transistor    noise    mos    few    recently    frequency    ghz    dotfive    sige    bipolar    hbt    race    silicon    characterization    power    density   

 Obiettivo del progetto (Objective)

DOTFIVE is a three-year IP proposal for a very ambitious project focused on advanced RTD activities necessary to move the Silicon/germanium heterojunction bipolar transistor (HBT) into the operating frequency range of 0.5 terahertz (THz) (500 gigahertz GHz) enabling the future development of communication, imaging or radar Integrated Circuits (IC) working at frequencies up to 160 GHz . For a given lithography node bipolar transistors and more recently HBT have always lead the frequency race compared to MOS devices, while offering higher power density and better analogue performances (transconductance, noise, transistor matching).The main objective of this highly qualified consortium is to establish a leadership position for the European semiconductor industry in the area of millimeter wave (mmW) by research and development work on silicon based transistor devices and circuit design capabilities and know-how. SiGe HBT is a key reliable device for applications requiring power > few mW (future MOS limitation) and enabling high density, low cost integration compared to III-V. To achieve the goal DOTFIVE unites a powerful consortium:Seven academic partners for the physics understanding of nanotransistors, simulation, modeling, and characterization (down to few k) of devices; as well as the design and characterization of demonstrator electronic blocks (Low Noise Amplifier, mixers...).Two research institutes in charge of developing novel process modules and transistor structures on silicon wafers, capable of fabricating innovative SiGe HBT concepts.Two industrial companies, capable of producing 250 GHz HBT on silicon, and willing to push their capabilities to 500 GHz by incremental structural and technological improvements utilizing some of the most advanced equipments introduced recently by the CMOS miniaturization race. Two SME capable to deliver to designers, transistor parameter extraction and RF advanced compact models for all the silicon providers above.

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