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High efficiency GaInP/GaAs Tandem wafer bonded solar cell on silicon

Total Cost €


EC-Contrib. €






 HISTORIC project word cloud

Explore the words cloud of the HISTORIC project. It provides you a very rough idea of what is the project "HISTORIC" about.

improvement    mismatch    un    mismatched    solution    substrate    innovative    terrestrial    photovoltaic    supply    junction    mainly    ge    junctions    proven    optimized    si    pv    decreasing    prices    restricted    quality    market    combine    lift    combined    reaching    made    additional    al    efficiency    structure    combining    25    advantages    am1    material    limited    record    little    concentration    gt    re    matched    5g    validity    conventional    bypass    cells    off    ise    security    compounds    triple    followed    30    device    bonded    breakthrough    gainp    direct    trapping    relying    sun    experimental    conversion    modeling    space    stacking    clean    offers    fraunhofer    interface    room    climate    pn    spread    bond    bonding    competitiveness    gaas    benefits    35    electricity    grown    solar    power    wafer    semiconductors    photons    dominant    industry    lattice    monocrystalline    crystal    sufficient    diodes    light    micro    epitaxial    matching    4cm2    markets    silicon    answer    cell    optimize    layers    efficiencies    hybrid    energy   

Project "HISTORIC" data sheet

The following table provides information about the project.


Organization address
postcode: 80686

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Germany [DE]
 Project website
 Total cost 159˙460 €
 EC max contribution 159˙460 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2014
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2015
 Duration (year-month-day) from 2015-06-01   to  2017-05-31


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 


 Project objective

Direct conversion of photons into electricity is a promising clean energy solution to answer the challenge of energy supply security, competitiveness of the EU industry, electricity prices and climate change. Monocrystalline silicon (c-Si), the dominant technology on the photovoltaic (PV) market, benefits from a strong industry and record power conversion efficiency of 25%, with a cost decreasing every year. However, c-Si technology, mainly limited by material properties, has very little room for efficiency improvement. Much higher efficiencies has been achieved by stacking diodes made of III-V semiconductors; but for cost and availability reasons, the III-V solar cells are restricted to specific markets (space & terrestrial concentration). A hybrid solution combining the advantages III-V multi-junction cells with the benefits of Si, the most wide-spread PV material, offers great opportunities. Indeed, efficiencies up to 35% under 1-sun AM1.5G conditions is expected for a triple junction device based on conventional c-Si cells combined with additional (Al)GaAs and GaInP pn-junctions (4 µm of III-V material on top of a c-Si wafer). However the direct epitaxial growth of (Al)GaAs & GaInP on Si is highly mismatched and sufficient material quality has not been achieved so far. The innovative approach proposed in this project bypass the mismatch and enables to combine high crystal quality III-V compounds with Si through wafer bonding: III-V layers are grown lattice matched on GaAs or Ge and then bonded to Si, followed by substrate lift-off & re-use. The validity of the approach has been proven at Fraunhofer ISE with un-optimized GaInP/GaAs//Si triple-junction solar cells with >25% efficiency. This research project, relying on modeling and experimental work to optimize the cell structure (light trapping, bond interface quality, current matching, etc.), targets the significant breakthrough of a GaInP/GaAs//Si triple junction reaching >30% efficiency on large areas (>4cm2).


year authors and title journal last update
List of publications.
2016 Felix Predan, Dirk Reinwand, Romain Cariou, Markus Niemeyer, Frank Dimroth
Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation
published pages: 31103, ISSN: 0734-2101, DOI: 10.1116/1.4947118
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34/3 2019-07-23
2017 Romain Cariou, Jan Benick, Paul Beutel, Nasser Razek, Christoph Flotgen, Martin Hermle, David Lackner, Stefan W. Glunz, Andreas W. Bett, Markus Wimplinger, Frank Dimroth
Monolithic Two-Terminal III–V//Si Triple-Junction Solar Cells With 30.2% Efficiency Under 1-Sun AM1.5g
published pages: 367-373, ISSN: 2156-3381, DOI: 10.1109/JPHOTOV.2016.2629840
IEEE Journal of Photovoltaics 7/1 2019-07-23

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