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Ion-gated Interfaces for Quantum Phase Devices

Total Cost €


EC-Contrib. €






 Ig-QPD project word cloud

Explore the words cloud of the Ig-QPD project. It provides you a very rough idea of what is the project "Ig-QPD" about.

surface    functionalities    carrier    rapid    designed    sources    quantum    attracting    cvd    movement    emitting    synthesized    paradigm    emission    films    effect    light    fulfil    magnetism    techniques    fabrication    electrical    researches    combinations    dream    he    coherent    sub    material    perfect    correlating    transport    technologies    combining    erc    interface    device    sciences    cover    world    abrupt    switching    pioneer    interfaces    platform    doping    conventional    optical    transistors    groups    broad    semiconductor    ion    gated    environment    clear    utilize    efficient    create    sufficiently    optimized    timing    newly    disciplines    electronic    levels    adaptable    group    chiral    host    principles    electrochemical    grown    layered    jointly    ferromagnetism    fets    condensed    milestones    materials    competitive    transitions    mediated    gating    boost    operation    superconductivity    ionic    magnetization    tunable    phases    physics    enjoying   

Project "Ig-QPD" data sheet

The following table provides information about the project.


Organization address
address: Broerstraat 5
postcode: 9712CP

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Netherlands [NL]
 Total cost 2˙000˙000 €
 EC max contribution 2˙000˙000 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2014-CoG
 Funding Scheme ERC-COG
 Starting year 2015
 Duration (year-month-day) from 2015-06-01   to  2020-05-31


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 


 Project objective

The aim of this ERC proposal is to develop a highly efficient tunable interface with ion-movement-mediated gating as a rich platform for novel electronic devices by using field effect controlling of quantum phase transitions. Working beyond conventional FETs, the new transistors will be build by combining novel layered semiconductor films grown by the CVD method: newly synthesized ionic material; and a well-defined interface optimized by surface analysis techniques; which jointly are able to boost the field effect control of carrier doping to the range required for switching quantum phases such as superconductivity in electrical transport, ferromagnetism in magnetization, and chiral or coherent light sources in optical applications. The sub-topics are designed to cover sufficiently broad disciplines of material sciences, new device technologies based on electrochemical principles, and condensed-matter physics. Such a design will make the project high adaptable for success at different levels with clear defined objectives to: 1) develop new materials and material combinations for ion gated interfaces to establish a rich platform of quantum phases; 2) utilize these quantum phases for device functionalities enjoying the characteristic abrupt response in phase transitions and to establish control of magnetism by field effect; and 3) create light emitting devices for effectively correlating light emission with quantum phases. The project represents an exciting new research field that is attracting the attention of many research groups around the world. The applicant is a well-established pioneer in developing this rapid growing and highly competitive field, where he achieved major milestones in design, fabrication and operation of quantum phase devices. Embedded in the strong material researches environment of the host institute and in his new group, it is the perfect timing for the applicant to fulfil the dream of creating a new paradigm of electronic devices.


year authors and title journal last update
List of publications.
2018 Lei Liang, Qihong Chen, Jianming Lu, Wytse Talsma, Juan Shan, Graeme R. Blake, Thomas T. M. Palstra, Jianting Ye
Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating
published pages: eaar2030, ISSN: 2375-2548, DOI: 10.1126/sciadv.aar2030
Science Advances 4/4 2020-03-20
2017 Jie Yang, Pavlo Gordiichuk, Oleksandr Zheliuk, Jianming Lu, Andreas Herrmann, Jianting Ye
Role of Defects in Tuning the Electronic Properties of Monolayer WS 2 Grown by Chemical Vapor Deposition
published pages: 1700302, ISSN: 1862-6254, DOI: 10.1002/pssr.201700302
physica status solidi (RRL) - Rapid Research Letters 11/10 2020-03-20
2017 Erik Piatti, Qihong Chen, Jianting Ye
Strong dopant dependence of electric transport in ion-gated MoS 2
published pages: 13106, ISSN: 0003-6951, DOI: 10.1063/1.4992477
Applied Physics Letters 111/1 2020-03-20
2018 Jianming Lu, Oleksandr Zheliuk, Qihong Chen, Inge Leermakers, Nigel E. Hussey, Uli Zeitler, Jianting Ye
Full superconducting dome of strong Ising protection in gated monolayer WS 2
published pages: 3551-3556, ISSN: 0027-8424, DOI: 10.1073/pnas.1716781115
Proceedings of the National Academy of Sciences 115/14 2020-03-20
2015 Yu Saito, Yasuharu Nakamura, Mohammad Saeed Bahramy, Yoshimitsu Kohama, Jianting Ye, Yuichi Kasahara, Yuji Nakagawa, Masaru Onga, Masashi Tokunaga, Tsutomu Nojima, Youichi Yanase, Yoshihiro Iwasa
Superconductivity protected by spin–valley locking in ion-gated MoS2
published pages: 144-149, ISSN: 1745-2473, DOI: 10.1038/nphys3580
Nature Physics 12/2 2020-03-20
2017 Masaro Yoshida, Jianting Ye, Yijin Zhang, Yasuhiko Imai, Shigeru Kimura, Akihiko Fujiwara, Terukazu Nishizaki, Norio Kobayashi, Masaki Nakano, Yoshihiro Iwasa
Extended Polymorphism of Two-Dimensional Material
published pages: 5567-5571, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.7b02374
Nano Letters 17/9 2020-03-20
2018 Qihong Chen, Jianming Lu, Lei Liang, Oleksandr Zheliuk, Abdurrahman Ali El Yumin, Jianting Ye
Continuous Low-Bias Switching of Superconductivity in a MoS 2 Transistor
published pages: 1800399, ISSN: 0935-9648, DOI: 10.1002/adma.201800399
Advanced Materials 2020-03-20
2017 Q. H. Chen, J. M. Lu, L. Liang, O. Zheliuk, A. Ali, P. Sheng, J. T. Ye
Inducing and Manipulating Heteroelectronic States in a Single MoS 2 Thin Flake
published pages: , ISSN: 0031-9007, DOI: 10.1103/PhysRevLett.119.147002
Physical Review Letters 119/14 2020-03-20
2015 J. M. Lu, O. Zheliuk, I. Leermakers, N. F. Q. Yuan, U. Zeitler, K. T. Law, J. T. Ye
Evidence for two-dimensional Ising superconductivity in gated MoS2
published pages: 1353-1357, ISSN: 0036-8075, DOI: 10.1126/science.aab2277
Science 350/6266 2020-03-20
2017 Oleksandr Zheliuk, Jianming Lu, Jie Yang, Jianting Ye
Monolayer Superconductivity in WS 2
published pages: 1700245, ISSN: 1862-6254, DOI: 10.1002/pssr.201700245
physica status solidi (RRL) - Rapid Research Letters 11/9 2020-03-20
2015 Y. Saito, Y. Kasahara, J. Ye, Y. Iwasa, T. Nojima
Metallic ground state in an ion-gated two-dimensional superconductor
published pages: 409-413, ISSN: 0036-8075, DOI: 10.1126/science.1259440
Science 350/6259 2020-03-20

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