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PowerBase

Enhanced substrates and GaN pilot lines enabling compact power applications

Total Cost €

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EC-Contrib. €

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Partnership

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 PowerBase project word cloud

Explore the words cloud of the PowerBase project. It provides you a very rough idea of what is the project "PowerBase" about.

keeping    countries    core    primary    efficiency    action    technologies    ambition    material    innovative    consist    spans    band    nano    goals    jobs    economic    annual    expressed    limits    compatible    semiconductor    expand    supporting    background    tech    sachsen    carinthia    clear    leaders    raw    electronic    substrates    forefront    materials    excellent    automation    power    2014    domain    chip    technological    expertise    expanding    chain    powerbase    gap    assembly    ecsel    enhanced    bridging    micro    creation    plan    innovation    silicon    smart    substrate    qualified    austria    committed    contributions    market    germany    manufacturing    competences    positioning    lines    demonstrating    mart    representing    pilot    union    employment    industrial    area    gan    styria    markets    supply    regions    vertical    compact    electronics    societal    embedding    domains    ecs    bavaria    components    setting    strategic    semiconductors    line    supports    vision   

Project "PowerBase" data sheet

The following table provides information about the project.

Coordinator
INFINEON TECHNOLOGIES AUSTRIA AG 

Organization address
address: SIEMENSSTRASSE 2
city: VILLACH
postcode: 9500
website: www.infineon.com/austria

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Austria [AT]
 Project website http://www.powerbase-project.eu
 Total cost 90˙254˙494 €
 EC max contribution 19˙196˙548 € (21%)
 Programme 1. H2020-EU.2.1.1.7. (ECSEL)
 Code Call ECSEL-2014-2
 Funding Scheme ECSEL-IA
 Starting year 2015
 Duration (year-month-day) from 2015-05-01   to  2018-06-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    INFINEON TECHNOLOGIES AUSTRIA AG AT (VILLACH) coordinator 2˙546˙241.00
2    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM BE (LEUVEN) participant 5˙990˙663.00
3    INFINEON TECHNOLOGIES DRESDEN GMBH& CO KG DE (DRESDEN) participant 1˙630˙785.00
4    INFINEON TECHNOLOGIES AG DE (NEUBIBERG) participant 1˙519˙911.00
5    AMS AG AT (UNTERPREMSTAETTEN) participant 875˙669.00
6    SILTRONIC AG DE (MUNCHEN) participant 621˙616.00
7    INFINEON TECHNOLOGIES ITALIA SRL IT (MILAN0) participant 510˙859.00
8    EPIGAN NV BE (Hasselt) participant 503˙902.00
9    ELTEK AS NO (Drammen) participant 378˙503.00
10    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) participant 350˙585.00
11    UNIVERSITA DEGLI STUDI DI PADOVA IT (PADOVA) participant 349˙456.00
12    BESI AUSTRIA GMBH AT (RADFELD) participant 226˙762.00
13    TRYMAX SEMICONDUCTOR EQUIPMENT BV NL (NIJMEGEN) participant 222˙495.00
14    TECHNISCHE UNIVERSITAET DRESDEN DE (DRESDEN) participant 220˙690.00
15    NAMLAB GGMBH DE (DRESDEN) participant 216˙542.00
16    FREIBERGER COMPOUND MATERIALS GMBH DE (FREIBERG) participant 203˙538.00
17    FRONIUS INTERNATIONAL GMBH AT (PETTENBACH) participant 201˙709.00
18    NANOFOCUS AG DE (OBERHAUSEN) participant 200˙762.00
19    FOR OPTIMAL RENEWABLE ENERGY SYSTEMS SL ES (ZARAGOZA) participant 190˙218.00
20    GREEN POWER TECHNOLOGIES SL ES (BOLLULLOS DE LA MITACION SEVILLA) participant 171˙478.00
21    UNIVERSITETET I OSLO NO (OSLO) participant 171˙159.00
22    Besi Netherlands BV NL (DUIVEN) participant 166˙153.00
23    AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS ES (MADRID) participant 155˙537.00
24    KAI KOMPETENZZENTRUM AUTOMOBIL - UND INDUSTRIEELEKTRONIK GMBH AT (VILLACH ST MAGDALEN) participant 144˙101.00
25    FABMATICS GMBH DE (DRESDEN) participant 139˙969.00
26    IKERLAN S. COOP ES (MONDRAGON) participant 139˙059.00
27    UNIVERSITAET GRAZ AT (GRAZ) participant 131˙853.00
28    SPTS TECHNOLOGIES LIMITED UK (NEWPORT) participant 113˙003.00
29    SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE SK (BRATISLAVA) participant 111˙718.00
30    CTR CARINTHIAN TECH RESEARCH AG AT (VILLACH SANKT MAGDALEN) participant 106˙968.00
31    QUANTEMOL LIMITED UK (LONDON) participant 97˙957.00
32    UNIVERSITY OF BRISTOL UK (BRISTOL) participant 97˙685.00
33    MAX PLANCK INSTITUT FUR EISENFORSCHUNG GMBH DE (DUSSELDORF) participant 96˙410.00
34    BAUMANN GMBH DE (Amberg) participant 88˙208.00
35    Pac Tech - Packaging Technologies GmbH DE (Nauen) participant 84˙816.00
36    CISC SEMICONDUCTOR GMBH AT (KLAGENFURT) participant 66˙185.00
37    PLANSEE SE AT (REUTTE) participant 59˙306.00
38    NANO DESIGN SRO SK (BRATISLAVA) participant 56˙875.00
39    MEMSSTAR LIMITED UK (EDINBURGH) participant 37˙187.00

Map

 Project objective

The key objective of PowerBase “Enhanced substrates and GaN pilot lines enabling compact power applications” is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment growth in the European Union. The project PowerBase aims to contribute to the industrial ambition of value creation in Europe and fully supports this vision by addressing key topics of ECSEL multi annual strategic plan 2014. By positioning PowerBase as innovation action a clear focus on exploitation of the expected result is primary goal. To expand the limits in current power semiconductor technologies the project focuses on setting up a qualified wide band gap GaN technology Pilot line, on expanding the limits of today’s silicon based substrate materials for power semiconductors, improving manufacturing efficiency by innovative automation, setting up of a GaN compatible chip embedding pilot line and demonstrating innovation potential in leading compact power application domains. PowerBase is a project proposal with a vertical supply chain involved with contributions from partners in 7 European countries. This spans expertise from raw material research, process innovation, pilot line, assembly innovation and pilot line up to various application domains representing enhanced smart systems. The supporting partners consist of market leaders in their domain, having excellent technological background, which are fully committed to achieve the very challenging project goals. The project PowerBase aims to have significant impact on mart regions. High tech jobs in the area of semiconductor technologies and micro/nano electronics in general are expressed core competences of the regions Austria: Carinthia, Styria, Germany: Sachsen, Bavaria and many other countries/ regions involved.

 Deliverables

List of deliverables.
8.2.5.2 Organization of a workshop/training event Other 2019-05-20 13:14:24
D8.1.3.1 Press Release: Launching the PowerBase Project Other 2019-05-20 13:14:24
D8.2.5.1 Preparation of e-learning “Power electronics” module; Other 2019-05-20 13:14:24
D8.2.1.1 Initial Dissemination Plan and Set-up PowerBase Web-Site Other 2019-05-20 13:14:24
8.2.1.2 Final Report on Dissemination Activities Documents, reports 2019-05-20 13:14:24
D8.2.1.2 First Report on Dissemination Activities Documents, reports 2019-05-20 13:14:24

Take a look to the deliverables list in detail:  detailed list of PowerBase deliverables.

 Publications

year authors and title journal last update
List of publications.
2016 N. Ganagona, I. Kolevatov. H.M. Ayedh, A. Galeckas, L. Vines, E.V. Monakhov and B.G. Svensson
Point defects and impurities in mon-crystalline silicon - some recent advances
published pages: , ISSN: , DOI:
The 7th International Symposium on Advanced Science and Technology of Silicon Materials (2016) 2019-06-18
2018 Ander Avila, Xavier Perpiña, Xavier Jorda, Asier Garcia-Bediaga, Alejandro Rujas
Thermal performance analysis of GaN-based high-power converters
published pages: , ISSN: , DOI:
European Conference on Power Electronics and Applications 2019-06-18
2018 Ander Avila, Asier Garcia-Bediaga, Alberto Rodriguez, Luis Mir, Alejandro Rujas
Analysis of Optimal Operation Conditions for GaN-basedPower Converters
published pages: , ISSN: , DOI:
Energy Conversion Congress and Exposition 2019-06-18
2018 Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Stefaan Decoutere, Martin Kuball
Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs
published pages: 1838-1842, ISSN: 0018-9383, DOI: 10.1109/ted.2018.2813542
IEEE Transactions on Electron Devices 65/5 2019-06-18
2017 Ming Zhao, Karen Geens, Xiangdong Li, Marleen Van Hove, Vesa-Pekka Lempinen, Jaakko Sormunen, Robert Langer, Stefaan Decoutere
MOCVD Growth and Characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration
published pages: , ISSN: , DOI:
ICNS-12 2019-06-18
2018 S. Stoffels, K. Geens, N. Posthuma, M. Zhao, H. Liang, X. Li, D. Wellekens, S. You, B. Bakeroot, M.Van Hove, S. Decoutere
GaN Device architectures enabled by next generation substrates
published pages: , ISSN: , DOI:
GaN Marathon 2.0 2019-06-18
2017 L. Lymperakis, J. Neugebauer, M. Himmerlich, S. Krischok, M. Rink, J. Kröger, V. M. Polyakov
Adsorption and desorption of hydrogen at nonpolar GaN ( 1 1 ¯ 00 ) surfaces: Kinetics and impact on surface vibrational and electronic properties
published pages: 1-11, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.195314
Physical Review B 95/19 2019-06-18
2017 F.P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Exploring the thermal limit of GaN power devices under extreme overload conditions
published pages: 304-308, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2017.07.046
Microelectronics Reliability 76-77 2019-06-18
2018 S. You, N. E. Posthuma, N. Ronchi, S. Stoffels, B. Bakeroot, D. Wellekens, H. Liang, M. Zhao and S. Decoutere
Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
published pages: , ISSN: , DOI:
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 2018 2019-06-18
2018 L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich
Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method
published pages: 57-65, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2018.03.028
Journal of Crystal Growth 491 2019-06-18
2018 X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Thermal Characterization of SMD Packaged 650V GaN HEMTs Assembled in PCB Boards
published pages: , ISSN: , DOI:
GaN Marathon 2.0 2019-06-18
2018 F.P. Pribahsnik
GaN specific mechanical phenomena and their influence on reliability in power HEMT operation
published pages: , ISSN: , DOI:
PhD thesis @ Faculty of electronics and information tecnhologies, Otto v Guericke Universität Magdeburg 2019-06-18
2017 Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation
published pages: 148-155, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2017.08.012
Microelectronics Reliability 78 2019-06-18
2018 N.E. Posthuma, S. You, S. Stoffels, H. Liang, M. Zhao and S. Decoutere
Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications
published pages: , ISSN: , DOI:
The 30th IEEE International Symposium on Power Semiconductor Devices and Ics (ISPSD) 2019-06-18
2018 S. Stoffels, K. Geens, X. Li, M. Zhao, M. Borga, E. Zanoni, G. Meneghesso, M. Meneghini, N. Posthuma, M. Van Hove and S. Decoutere
Substrate optimization for high reliability GaN devices
published pages: , ISSN: , DOI:
MRS2018 Symposium 2019-06-18
2018 X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Analysis of natural convection cooling solutions for GaN HEMT transistors
published pages: , ISSN: , DOI:
20th European Conference on Power Electronics and Applications 2019-06-18
2018 Meneghini M. et al.
Challenges towards highly reliabile GaN power transistors
published pages: , ISSN: , DOI:
GaN Marathon 2018 2019-06-18
2017 I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
published pages: 298-303, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2017.06.061
Microelectronics Reliability 76-77 2019-06-18
2017 L. Stockmeier, L. Lehmann, A. Miller, C. Reimann, J. Friedrich
Dislocation formation in heavily As-doped Czochralski grown silicon
published pages: 1600373, ISSN: 0232-1300, DOI: 10.1002/crat.201600373
Crystal Research and Technology 52/8 2019-06-18
2018 Xavier Jorda, Ander Avila, Asier Garcia-Bediaga, Xavier Perpiña, Miquel Vellvehi
Analysis of natural convection cooling solutions for GaN HEMT transistors
published pages: , ISSN: , DOI:
European Conference on Power Electronics and Applications 2019-06-18
2017 Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, Marleen Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs
published pages: 3616-3621, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2726440
IEEE Transactions on Electron Devices 64/9 2019-06-18
2018 H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H Kawai, Dan Kinzer, Martin Kuball, Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin März, R McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E Morvan, A Nakajima, E M S Narayanan, Stephen Oliver, Tomás Palacios, Daniel Piedra, M Plissonnier, R Reddy, Min Sun, Iain Thayne, A Torres, Nicola Trivellin, V Unni, Michael J Uren, Marleen Van Hove, David J Wallis, J Wang, J Xie, S Yagi, Shu Yang, C Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang
The 2018 GaN power electronics roadmap
published pages: 163001, ISSN: 0022-3727, DOI: 10.1088/1361-6463/aaaf9d
Journal of Physics D: Applied Physics 51/16 2019-06-18
2018 M.Lenzhofer, A. Frank
Efficiency and Near-Field Emission Comparisons of a Si- and GaN Based Buck Converter Topology
published pages: , ISSN: , DOI:
IEEE- PEMC 2018 2019-06-18
2017 Xiangdong Li, Marleen Van Hove, Ming Zhao, Karen Geens, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, Stefaan Decoutere
200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration
published pages: 1-1, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2703304
IEEE Electron Device Letters 2019-06-18
2016 Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination
published pages: 3451-3458, ISSN: 0018-9383, DOI: 10.1109/TED.2016.2587103
IEEE Transactions on Electron Devices 63/9 2019-06-18
2017 D. Poppitz, S. Brand, A. Graff, T. Detzel, O. Häberlen, G. Prechtl, F. Altmann
Strain analysis and dicing defects of GaN on Si substrates
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2016 A. Dzarasova
QDB: A new database of plasma chemistries and reactions – concept and exemplar verification
published pages: , ISSN: , DOI:
IOP Plasma physics conference 2019-06-18
2016 Hofer V., Leitner J., Nowak T
Determination of guard bands for quality characteristics using copula-based models for longitudinal data
published pages: , ISSN: , DOI:
The Deutsche Arbeitsgemeinschaft Statistik (DAGStat) 2016 2019-06-18
2017 L. Lymperakis and J. Neugebauer
Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2017 J. Marek, A. Šatka, M. Jagelka, A. Chvála, P. Príbytný, M. Donoval and D. Donoval
Modern p-GaN power devices under UIS conditions
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2017 Ales Chvala, Juraj Marek, Patrik Pribytny, Alexander Satka, Martin Donoval, Daniel Donoval
Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties
published pages: 333-336, ISSN: 0018-9383, DOI: 10.1109/TED.2016.2629024
IEEE Transactions on Electron Devices 64/1 2019-06-18
2017 M. Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2017 Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak
Guardbanding based on Device Drift Behavior
published pages: , ISSN: , DOI:
Nineteenth Annual Automotive Electronics Reliability Workshop 2019-06-18
2017 F. P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
High temperature failure mode in power GaN devices
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2017 A. Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni
A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2016 Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka and Daniel Donoval
Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations
published pages: , ISSN: , DOI:
International MOS-AK Workshop 2019-06-18
2017 Jonathan Tennyson, Sara Rahimi, Christian Hill, Lisa Tse, Anuradha Vibhakar, Dolica Akello-Egwel, Daniel B Brown, Anna Dzarasova, James R Hamilton, Dagmar Jaksch, Sebastian Mohr, Keir Wren-Little, Johannes Bruckmeier, Ankur Agarwal, Klaus Bartschat, Annemie Bogaerts, Jean-Paul Booth, Matthew J Goeckner, Khaled Hassouni, Yukikazu Itikawa, Bastiaan J Braams, E Krishnakumar, Annarita Laricchiuta, Nigel J Mason, Sumeet Pandey, Zoran Lj Petrovic, Yi-Kang Pu, Alok Ranjan, Shahid Rauf, Julian Schulze, Miles M Turner, Peter Ventzek, J Christopher Whitehead, Jung-Sik Yoon
QDB: a new database of plasma chemistries and reactions
published pages: 55014, ISSN: 1361-6595, DOI: 10.1088/1361-6595/aa6669
Plasma Sources Science and Technology 26/5 2019-06-18
2016 J. Marek, M. Jagelka, A. Chvála, P. Príbytný, M.Donoval and D. Donoval
UIS Capability of Modern GaN Power Devices
published pages: , ISSN: , DOI:
3rd international conference on advances in electronic and photonic technologies 2019-06-18
2017 K. Geens, M. Van Hove, X. Li, M. Zhao, A. Šatka, A. Vincze and S. Decoutere
CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2017 M. Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen
Application Related Reliability Test Concept for GaN HEMT Power Devices
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2015 Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations
published pages: , ISSN: , DOI:
American Vacuum Society Symopsium 2019-06-18
2016 Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli
MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111)
published pages: , ISSN: , DOI:
18th International Conference on Metal Organic Vapor Phase Epitaxy 2019-06-18
2017 J. Priesol, A. Šatka, A. Chvála, S. Stoffels, S. Decoutere
Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method
published pages: , ISSN: , DOI:
Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method 2019-06-18
2017 S. Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere
Next generation 200mm substrates for GaN power devices
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2017 S. Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens,
Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2016 S. Rahimi, C. Hill, L. Tse, A. Vibhakar, S. Mohr, J.R. Hamilton, A. Dzarasova, D.B. Brown, J. Tennyson
Constructing self-consistent validated plasma chemistry
published pages: , ISSN: , DOI:
The 38th International Symposium on Dry Process (DPS2016) 2019-06-18
2016 Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere
Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111)
published pages: , ISSN: , DOI:
18th International Conference on Metal Organic Vapor Phase Epitaxy 2019-06-18
2017 Karen Geens
First time demonstration of fully isolated GaN power devices using SOI technology
published pages: , ISSN: , DOI:
imec magazine 2019-06-18
2017 M. Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2015 Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Linking reactor-scale plasma modelling with feature-scale profile
published pages: , ISSN: , DOI:
Dry Process Symposium 2019-06-18
2017 X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere
200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration
published pages: , ISSN: , DOI:
41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe 2019-06-18
2016 Matteo Meneghini, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Gate Stability of GaN-Based HEMTs with P-Type Gate
published pages: 14, ISSN: 2079-9292, DOI: 10.3390/electronics5020014
Electronics 5/2 2019-06-18
2016 L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Possible reasons for dislocation formation in heavily doped Czochralski silicon
published pages: , ISSN: , DOI:
1st German Czechoslovak Conference on Crystal Growth 2019-06-18
2016 Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak
Guardbanding Techniques for the Semiconductor Industry: A Comparative Study
published pages: , ISSN: , DOI:
The Joint Statistical Meeting – JSM2016 2019-06-18
2016 J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann
Possible reasons for dislocation formation in heavily doped Czochralski silicon
published pages: , ISSN: , DOI:
10th International Conference of Polish Society for Crystal Growth - ICPSCG10 2019-06-18
2016 Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson
QDB: Validated Plasma Chemistries Database
published pages: , ISSN: , DOI:
69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE – GEC 2019-06-18
2016 Jonathan Tennyson, Christian Hill, Sara Rahimi
QDB: A sustainable database for plasma chemistries” in International Workshop on Plasmas for Energy and Environmental Applications
published pages: , ISSN: , DOI:
International Workshop on Plasmas for Energy and Environmental Applications – IWPEEA2016 2019-06-18
2016 Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball,
Processes behind Suppressed Current Collapse Buffer Architectures
published pages: , ISSN: , DOI:
The International Workshop on Nitride Semiconductors 2016 2019-06-18
2016 L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Possible reasons for dislocation formation in heavily doped Czochralski silicon
published pages: , ISSN: , DOI:
The International Conference on Crystal Growth and Epitaxy -ICCGE-18 2019-06-18

Are you the coordinator (or a participant) of this project? Plaese send me more information about the "POWERBASE" project.

For instance: the website url (it has not provided by EU-opendata yet), the logo, a more detailed description of the project (in plain text as a rtf file or a word file), some pictures (as picture files, not embedded into any word file), twitter account, linkedin page, etc.

Send me an  email (fabio@fabiodisconzi.com) and I put them in your project's page as son as possible.

Thanks. And then put a link of this page into your project's website.

The information about "POWERBASE" are provided by the European Opendata Portal: CORDIS opendata.

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