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CONNECT

CarbON Nanotube compositE InterconneCTs

Total Cost €

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EC-Contrib. €

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Partnership

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Outcomes and
results

CONNECT project word cloud

Explore the words cloud of the CONNECT project. It provides you a very rough idea of what is the project "CONNECT" about.

technologies composite alternative conventional doped thermal micro size groups density power goes integration recovery cm2 cnts filled industry nanotube modern manufacturability ampacity ohmcm compatibility significantly scaled additionally 10 transferring explore interconnect efficiency neuromorphic 108a microelectronics demonstrators architectures copper gained individual chip brings aspires extension realisation microelectronic bundles innovations schemes electromigration chain computing scaling society proposes architecture metal fine applicable consumption irrespective energy shares bottlenecks links decreasing carbon cnt users techniques resistivity electronic circuit our ultra cmos electrical material connect domain semiconductor landscape prepare performance enhanced lines miniaturized enormously interconnects imminent fundamental sustain fabrication market

Project "CONNECT" data sheet

The following table provides information about the project.

Coordinator	FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Organization address address: HANSASTRASSE 27C city: MUNCHEN postcode: 80686 website: www.fraunhofer.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Germany [DE]
Project website	http://www.connect-h2020.eu/
Total cost	3˙999˙267 €
EC max contribution	3˙437˙872 € (86%)
Programme	1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
Code Call	H2020-ICT-2015
Funding Scheme	RIA
Starting year	2016
Duration (year-month-day)	from 2016-01-01 to 2018-12-31

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Organization address address: HANSASTRASSE 27C city: MUNCHEN postcode: 80686 website: www.fraunhofer.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	coordinator	1˙187˙378.00
2	COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Organization address address: RUE LEBLANC 25 city: PARIS 15 postcode: 75015 website: www.cea.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS 15)	participant	1˙044˙500.00
3	CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS Organization address address: RUE MICHEL ANGE 3 city: PARIS postcode: 75794 website: www.cnrs.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS)	participant	380˙043.00
4	AIXTRON LIMITED AIXTRON LIMITED Organization address address: ANDERSON ROAD BUCKINGWAY BUSINESS PARK SWAVESEY city: CAMBRIDGE postcode: CB24 5FQ website: www.aixtron.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (CAMBRIDGE)	participant	325˙000.00
5	UNIVERSITY OF GLASGOW UNIVERSITY OF GLASGOW Organization address address: UNIVERSITY AVENUE city: GLASGOW postcode: G12 8QQ website: www.gla.ac.uk contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (GLASGOW)	participant	200˙450.00
6	SYNOPSYS (NORTHERN EUROPE) LIMITED SYNOPSYS (NORTHERN EUROPE) LIMITED Organization address address: BROOK DRIVE 100 GREEN PARK city: READING BERKSHIRE postcode: RG2 6UJ website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (READING BERKSHIRE)	participant	166˙276.00
7	Gold Standard Simulations ltd Gold Standard Simulations ltd Organization address address: Mitchell Street 90 Gordon Chambers city: Glasgow postcode: G1 3NQ website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (Glasgow)	participant	134˙223.00
8	IBM RESEARCH GMBH IBM RESEARCH GMBH Organization address address: SAEUMERSTRASSE 4 city: RUESCHLIKON postcode: 8803 website: www.zurich.ibm.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	CH (RUESCHLIKON)	participant	0.00

Map

Project objective

Our modern society has gained enormously from novel miniaturized microelectronic products with enhanced functionality at ever decreasing cost. However, as size goes down, interconnects become major bottlenecks irrespective of the application domain. CONNECT proposes innovations in novel interconnect architectures to enable future CMOS scaling by integration of metal-doped or metal-filled Carbon Nanotube (CNT) composite. To achieve the above, CONNECT aspires to develop fabrication techniques and processes to sustain reliable CNTs for on-chip interconnects. Also challenges of transferring the process into the semiconductor industry and CMOS compatibility will be addressed. CONNECT will investigate ultra-fine CNT lines and metal-CNT composite material for addressing the most imminent high power consumption and electromigration issues of current state-of-the-art copper interconnects. Demonstrators will be developed to show significantly improved electrical resistivity (up to 10µOhmcm for individual doped CNT lines), ampacity (up to 108A/cm2 for CNT bundles), thermal and electromigration properties compared to state-of-the-art approaches with conventional copper interconnects. Additionally, CONNECT will develop novel CNT interconnect architectures to explore circuit- and architecture-level performance and energy efficiency. The technologies developed in this project are key for both performance and manufacturability of scaled microelectronics. It will allow increased power density and scaling density of CMOS or CMOS extension and will also be applicable to alternative computing schemes such as neuromorphic computing. The CONNECT consortium has strong links along the value chain from fundamental research to endâ€users and brings together some of the best research groups in that field in Europe. The realisation of CONNECT will foster the recovery of market shares of the European electronic sector and prepare the industry for future developments of the electronic landscape

Deliverables

List of deliverables.
Website Creation and Activation	Documents, reports	2019-09-02 09:58:28
Hierarchical models of the electrical and thermal conductivities of metallic CNT and composite Cu-CNT interconnects	Documents, reports	2019-09-02 09:58:28
Report on novel interconnect architecture exploration and simulation	Documents, reports	2019-09-02 09:58:28
Wikipedia page Creation and Activation	Documents, reports	2019-09-02 09:58:28
Report on dissemination activities during last period	Documents, reports	2019-09-02 09:58:27
Intellectual Property Audit and workshop organized at t0+24	Documents, reports	2019-09-02 09:58:27
Hierarchical models of the contacts between CNTs and Cu and between CNT and Cu-CNT interconnects and transistors, and the corresponding electro-thermal coupling	Documents, reports	2019-09-02 09:58:27

Take a look to the deliverables list in detail: detailed list of CONNECT deliverables.

Publications

List of publications.
year	authors and title	journal	last update
2016	J. Liang, L. Zhang, N. Azemard-Crestani, P. Nouet, A. Todri-Sanial Physical Description and Analysis of Doped Carbon Nanotube Interconnects published pages: , ISSN: , DOI:	2016 IEEE Power and Timing Modeling, Optimization and Simulation	2019-09-02
2017	J. Liang, J. Lee, S. Berrada, V. Georgiev, A. Asenov, N. Azemard-Crestani, A. Todri-Sanial Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application published pages: , ISSN: , DOI:	12th IEEE Nanotechnology Materials and Devices Conference (NMDC)	2019-09-02
2017	J. Lee, T. Sadi, Jie Liang, V. P. Georgiev, A. Todri-Sanial, and A. Asenov. A hierarchical model for CNT and Cu-CNT composite interconnects: from density functional theory to circuit-level simulations published pages: , ISSN: , DOI:	2017 International Workshop on Computational Nanotechnology (IWCN)	2019-09-02
2017	J. Liang, A. Todri-Sanial Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application published pages: , ISSN: , DOI:	GRAPHENE 2017 International Conference.	2019-09-02
2016	Olivier Faynot, Severine Cheramy, Maud Vinet, Sylvain Maitrejean Status and Future of Advanced Interconnects and the Needs for Simulation published pages: , ISSN: , DOI:	2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices	2019-09-02
2016	A. Todri-Sanial Investigation of Electrical and Thermal Properties of Carbon Nanotube Interconnects published pages: , ISSN: , DOI:	2016 IEEE Power and Timing Modeling, Optimization and Simulation	2019-09-02
2016	Jie Liang, Aida Todri-Sanial Carbon Nanotubes for Interconnects published pages: , ISSN: , DOI:	2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices	2019-09-02
2017	J. Lee, J. Liang, S. M. Amoroso, T. Sadi, L. Wang, P. Asenov, A. Pender, D. Reid, V. P. Georgiev, C. Millar, A. Todri-Sanial, and A. Asenov Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technologies. published pages: , ISSN: , DOI:	22nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)	2019-09-02
2016	S. M. Amoroso, A. Pender, A. Brown, D. Reid, E. Towie, P. Asenov, C. Millar and A. Asenov Tools for Simulation Workflow Management and their Application to Interconnect Modelling published pages: , ISSN: , DOI:	2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices	2019-09-02
2018	Uhlig, B., Liang, J., Lee, J., Ramos, R., Dhavamani, A., Nagy, N., Dijon, J., Okuno, H., Kalita, D., Georgiev, V., Asenov, A., Amoroso, S., Wang, L., Millar, C., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Pandey, R. R., Chen, R., and Todri-Sanial, A. Progress on Carbon Nanotube BEOL Interconnects. published pages: , ISSN: , DOI:	2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 19-23 Mar 2018	2019-09-02
2017	Aida Todri-Sanial, Raphael Ramos, Hanako Okuno, Jean Dijon, Abitha Dhavamani, Marcus Widlicenus, Katharina Lilienthal, Benjamin Uhlig, Toufik Sadi, Vihar Georgiev, Asen Asenov, Salvatore Amoroso, Andrew Pender, Andrew Brown, Campbell Millar, Fabian Motzfeld, Bernd Gotsmann, Jie Liang, Goncalo Goncalves, Nalin Rupesinghe, Ken Teo A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits published pages: 47-62, ISSN: 1531-636X, DOI: 10.1109/MCAS.2017.2689538	IEEE Circuits and Systems Magazine 17/2	2019-09-02
2018	Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances--Part I: Pristine MWCNT published pages: 1-8, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2868421	IEEE Transactions on Electron Devices	2019-09-02
2018	Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances--Part II: Impact of Charge Transfer Doping published pages: 1-8, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2868424	IEEE Transactions on Electron Devices	2019-09-02
2018	Jie Liang, Jaehyun Lee, Salim Berrada, Vihar P. Georgiev, Reeturaj Pandey, Rongmei Chen, Asen Asenov, Aida Todri-Sanial Atomistic- to Circuit-Level Modeling of Doped SWCNT for On-Chip Interconnects published pages: 1084-1088, ISSN: 1536-125X, DOI: 10.1109/TNANO.2018.2802320	IEEE Transactions on Nanotechnology 17/6	2019-09-02
2018	Jaehyun Lee, Salim Berrada, Fikru Adamu-Lema, Nicole Nagy, Vihar P. Georgiev, Toufik Sadi, Jie Liang, Raphael Ramos, Hamilton Carrillo-Nunez, Dipankar Kalita, Katharina Lilienthal, Marcus Wislicenus, Reeturaj Pandey, Bingan Chen, Kenneth B. K. Teo, Goncalo Goncalves, Hanako Okuno, Benjamin Uhlig, Aida Todri-Sanial, Jean Dijon, Asen Asenov Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study published pages: 3884-3892, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2853550	IEEE Transactions on Electron Devices 65/9	2019-09-02
2018	Fabian Konemann, Morten Vollmann, Fabian Menges, Bernd Gotsmann Nanoscale Thermometry by Scanning Microscopy published pages: , ISSN: , DOI:	THERMINIC 2018 - 24th International Worskhop	2019-09-02

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