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CONNECT

CarbON Nanotube compositE InterconneCTs

Total Cost €

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EC-Contrib. €

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Partnership

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 CONNECT project word cloud

Explore the words cloud of the CONNECT project. It provides you a very rough idea of what is the project "CONNECT" about.

microelectronics    architectures    metal    links    resistivity    cnts    energy    size    conventional    technologies    performance    electrical    cmos    micro    explore    groups    semiconductor    chip    transferring    108a    scaled    alternative    consumption    material    demonstrators    microelectronic    chain    our    prepare    decreasing    applicable    extension    shares    gained    proposes    nanotube    scaling    copper    schemes    ohmcm    recovery    brings    goes    manufacturability    thermal    computing    irrespective    modern    market    society    innovations    neuromorphic    domain    bundles    miniaturized    power    filled    significantly    imminent    compatibility    efficiency    fabrication    density    connect    lines    bottlenecks    sustain    interconnect    individual    ampacity    electromigration    industry    fundamental    interconnects    enormously    circuit    additionally    architecture    cnt    10    techniques    users    integration    landscape    fine    aspires    ultra    cm2    composite    enhanced    carbon    doped    realisation    electronic   

Project "CONNECT" data sheet

The following table provides information about the project.

Coordinator
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 

Organization address
address: HANSASTRASSE 27C
city: MUNCHEN
postcode: 80686
website: www.fraunhofer.de

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Germany [DE]
 Project website http://www.connect-h2020.eu/
 Total cost 3˙999˙267 €
 EC max contribution 3˙437˙872 € (86%)
 Programme 1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
 Code Call H2020-ICT-2015
 Funding Scheme RIA
 Starting year 2016
 Duration (year-month-day) from 2016-01-01   to  2018-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) coordinator 1˙187˙378.00
2    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) participant 1˙044˙500.00
3    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS FR (PARIS) participant 380˙043.00
4    AIXTRON LIMITED UK (CAMBRIDGE) participant 325˙000.00
5    UNIVERSITY OF GLASGOW UK (GLASGOW) participant 200˙450.00
6    SYNOPSYS (NORTHERN EUROPE) LIMITED UK (READING BERKSHIRE) participant 166˙276.00
7    Gold Standard Simulations ltd UK (Glasgow) participant 134˙223.00
8    IBM RESEARCH GMBH CH (RUESCHLIKON) participant 0.00

Map

 Project objective

Our modern society has gained enormously from novel miniaturized microelectronic products with enhanced functionality at ever decreasing cost. However, as size goes down, interconnects become major bottlenecks irrespective of the application domain. CONNECT proposes innovations in novel interconnect architectures to enable future CMOS scaling by integration of metal-doped or metal-filled Carbon Nanotube (CNT) composite. To achieve the above, CONNECT aspires to develop fabrication techniques and processes to sustain reliable CNTs for on-chip interconnects. Also challenges of transferring the process into the semiconductor industry and CMOS compatibility will be addressed. CONNECT will investigate ultra-fine CNT lines and metal-CNT composite material for addressing the most imminent high power consumption and electromigration issues of current state-of-the-art copper interconnects. Demonstrators will be developed to show significantly improved electrical resistivity (up to 10µOhmcm for individual doped CNT lines), ampacity (up to 108A/cm2 for CNT bundles), thermal and electromigration properties compared to state-of-the-art approaches with conventional copper interconnects. Additionally, CONNECT will develop novel CNT interconnect architectures to explore circuit- and architecture-level performance and energy efficiency. The technologies developed in this project are key for both performance and manufacturability of scaled microelectronics. It will allow increased power density and scaling density of CMOS or CMOS extension and will also be applicable to alternative computing schemes such as neuromorphic computing. The CONNECT consortium has strong links along the value chain from fundamental research to end‐users and brings together some of the best research groups in that field in Europe. The realisation of CONNECT will foster the recovery of market shares of the European electronic sector and prepare the industry for future developments of the electronic landscape

 Deliverables

List of deliverables.
Website Creation and Activation Documents, reports 2019-09-02 09:58:28
Hierarchical models of the electrical and thermal conductivities of metallic CNT and composite Cu-CNT interconnects Documents, reports 2019-09-02 09:58:28
Report on novel interconnect architecture exploration and simulation Documents, reports 2019-09-02 09:58:28
Wikipedia page Creation and Activation Documents, reports 2019-09-02 09:58:28
Report on dissemination activities during last period Documents, reports 2019-09-02 09:58:27
Intellectual Property Audit and workshop organized at t0+24 Documents, reports 2019-09-02 09:58:27
Hierarchical models of the contacts between CNTs and Cu and between CNT and Cu-CNT interconnects and transistors, and the corresponding electro-thermal coupling Documents, reports 2019-09-02 09:58:27

Take a look to the deliverables list in detail:  detailed list of CONNECT deliverables.

 Publications

year authors and title journal last update
List of publications.
2016 J. Liang, L. Zhang, N. Azemard-Crestani, P. Nouet, A. Todri-Sanial
Physical Description and Analysis of Doped Carbon Nanotube Interconnects
published pages: , ISSN: , DOI:
2016 IEEE Power and Timing Modeling, Optimization and Simulation 2019-09-02
2017 J. Liang, J. Lee, S. Berrada, V. Georgiev, A. Asenov, N. Azemard-Crestani, A. Todri-Sanial
Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application
published pages: , ISSN: , DOI:
12th IEEE Nanotechnology Materials and Devices Conference (NMDC) 2019-09-02
2017 J. Lee, T. Sadi, Jie Liang, V. P. Georgiev, A. Todri-Sanial, and A. Asenov.
A hierarchical model for CNT and Cu-CNT composite interconnects: from density functional theory to circuit-level simulations
published pages: , ISSN: , DOI:
2017 International Workshop on Computational Nanotechnology (IWCN) 2019-09-02
2017 J. Liang, A. Todri-Sanial
Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application
published pages: , ISSN: , DOI:
GRAPHENE 2017 International Conference. 2019-09-02
2016 Olivier Faynot, Severine Cheramy, Maud Vinet, Sylvain Maitrejean
Status and Future of Advanced Interconnects and the Needs for Simulation
published pages: , ISSN: , DOI:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices 2019-09-02
2016 A. Todri-Sanial
Investigation of Electrical and Thermal Properties of Carbon Nanotube Interconnects
published pages: , ISSN: , DOI:
2016 IEEE Power and Timing Modeling, Optimization and Simulation 2019-09-02
2016 Jie Liang, Aida Todri-Sanial
Carbon Nanotubes for Interconnects
published pages: , ISSN: , DOI:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices 2019-09-02
2017 J. Lee, J. Liang, S. M. Amoroso, T. Sadi, L. Wang, P. Asenov, A. Pender, D. Reid, V. P. Georgiev, C. Millar, A. Todri-Sanial, and A. Asenov
Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technologies.
published pages: , ISSN: , DOI:
22nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2019-09-02
2016 S. M. Amoroso, A. Pender, A. Brown, D. Reid, E. Towie, P. Asenov, C. Millar and A. Asenov
Tools for Simulation Workflow Management and their Application to Interconnect Modelling
published pages: , ISSN: , DOI:
2016 IEEE International Conference on Simulation of Semiconductor Processes and Devices 2019-09-02
2018 Uhlig, B., Liang, J., Lee, J., Ramos, R., Dhavamani, A., Nagy, N., Dijon, J., Okuno, H., Kalita, D., Georgiev, V., Asenov, A., Amoroso, S., Wang, L., Millar, C., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Pandey, R. R., Chen, R., and Todri-Sanial, A.
Progress on Carbon Nanotube BEOL Interconnects.
published pages: , ISSN: , DOI:
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 19-23 Mar 2018 2019-09-02
2017 Aida Todri-Sanial, Raphael Ramos, Hanako Okuno, Jean Dijon, Abitha Dhavamani, Marcus Widlicenus, Katharina Lilienthal, Benjamin Uhlig, Toufik Sadi, Vihar Georgiev, Asen Asenov, Salvatore Amoroso, Andrew Pender, Andrew Brown, Campbell Millar, Fabian Motzfeld, Bernd Gotsmann, Jie Liang, Goncalo Goncalves, Nalin Rupesinghe, Ken Teo
A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits
published pages: 47-62, ISSN: 1531-636X, DOI: 10.1109/MCAS.2017.2689538
IEEE Circuits and Systems Magazine 17/2 2019-09-02
2018 Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial
Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances--Part I: Pristine MWCNT
published pages: 1-8, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2868421
IEEE Transactions on Electron Devices 2019-09-02
2018 Rongmei Chen, Jie Liang, Jaehyun Lee, Vihar P. Georgiev, Raphael Ramos, Hanako Okuno, Dipankar Kalita, Yuanqing Cheng, Liuyang Zhang, Reetu R. Pandey, Salvatore Amoroso, Campbell Millar, Asen Asenov, Jean Dijon, Aida Todri-Sanial
Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances--Part II: Impact of Charge Transfer Doping
published pages: 1-8, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2868424
IEEE Transactions on Electron Devices 2019-09-02
2018 Jie Liang, Jaehyun Lee, Salim Berrada, Vihar P. Georgiev, Reeturaj Pandey, Rongmei Chen, Asen Asenov, Aida Todri-Sanial
Atomistic- to Circuit-Level Modeling of Doped SWCNT for On-Chip Interconnects
published pages: 1084-1088, ISSN: 1536-125X, DOI: 10.1109/TNANO.2018.2802320
IEEE Transactions on Nanotechnology 17/6 2019-09-02
2018 Jaehyun Lee, Salim Berrada, Fikru Adamu-Lema, Nicole Nagy, Vihar P. Georgiev, Toufik Sadi, Jie Liang, Raphael Ramos, Hamilton Carrillo-Nunez, Dipankar Kalita, Katharina Lilienthal, Marcus Wislicenus, Reeturaj Pandey, Bingan Chen, Kenneth B. K. Teo, Goncalo Goncalves, Hanako Okuno, Benjamin Uhlig, Aida Todri-Sanial, Jean Dijon, Asen Asenov
Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study
published pages: 3884-3892, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2853550
IEEE Transactions on Electron Devices 65/9 2019-09-02
2018 Fabian Konemann, Morten Vollmann, Fabian Menges, Bernd Gotsmann
Nanoscale Thermometry by Scanning Microscopy
published pages: , ISSN: , DOI:
THERMINIC 2018 - 24th International Worskhop 2019-09-02

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