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GFAB

Commercial-scale Graphene Electronic Devices Fab

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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Project "GFAB" data sheet

The following table provides information about the project.

Coordinator
GRAPHENEA SEMICONDUCTOR SL 

Organization address
address: PS MIKELETEGI 83
city: DONOSTIA
postcode: 20009
website: n.a.

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Spain [ES]
 Project website http://www.graphenea.com/pages/gfab-fet-open
 Total cost 100˙000 €
 EC max contribution 100˙000 € (100%)
 Programme 1. H2020-EU.1.2.1. (FET Open)
 Code Call H2020-FETOPEN-4-2016-2017
 Funding Scheme CSA
 Starting year 2018
 Duration (year-month-day) from 2018-04-01   to  2019-01-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    GRAPHENEA SEMICONDUCTOR SL ES (DONOSTIA) coordinator 100˙000.00
2    GRAPHENEA SA ES (SAN SEBASTIAN GUIPUZCOA) participant 0.00

Map

 Project objective

Innovative graphene-based electronic devices have been studied, demonstrated and prototyped during the Graphene FET Flagship project Graphene Electronic Devices include GFETs (Graphene Field-Effect Transistors) that are multipurpose chips that can be used in advanced photonics (photosensors, x-ray sensors, optical communications) and sensors (chemical sensors, biosensors, hall sensors, pressure sensors) among other applications Currently, GFET devices are manually produced in a labour intensive, small scale (individual prototypes), small wafer size (<50mm) and very low production yield (high % of device failure) The research community and industry have a great interest in these devices The current Semiconductor manufacturers (Fabs) are focused in very large volume markets ( 1 million units) so there is an opportunity for a Graphene Fab (GFAB) that produces GFETs according to customer’s specifications The objective of this project is to assess the feasibility of launching a new “Graphene Electronic Devices Fab” (GFAB) business that will offer Graphene Electronic Device fabrication to the industry and research centres Specially, the so called GFETs (Graphene Field Effect Transistors) have been developed during the FET Graphene Flagship project. GFETs are a special type of Graphene Electronic Device that offer higher performance for a wide range of applications The Graphene Electronic Devices must be produced under certified cleanroom manufacturing environment (ISO verified) using industry standard wafer sizes (150mm, 200mm and/or 300mm) offering a reliable, cost-competitive, fast and high yield product (ideally 95% yield). A complete supply chain must be defined by the incorporation of partners in the materials producers, IC (integrated circuits) design, semiconductor fabs, and equipment manufacturers sectors. This business will have an outstanding impact in the photonics and sensors industries and will accelerate the adoption of Graphene technology in other applica

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The information about "GFAB" are provided by the European Opendata Portal: CORDIS opendata.

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