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OSIRIS SIGNED

Optimal SIC substR ates for Integrated Microwave and Power CircuitS

Total Cost €

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EC-Contrib. €

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Partnership

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 OSIRIS project word cloud

Explore the words cloud of the OSIRIS project. It provides you a very rough idea of what is the project "OSIRIS" about.

realise    lower    mobility    28si    silicon    dissipation    elaborate    thermal    itself    gan    insulating    performances    performance    waveguided    tested    drift    isotopic    rates    wafer    spreading    complete    circuits    innovation    grown    epi    dissipating    device    electron    intends    single    innovative    proposes    carrier    thinned    grow    nitride    industries    osiris    100    thanks    microwave    effectiveness    diodes    temperature    microstrip    30    sic    essentially    semi    scattering    substrate    dissipative    transistors    really    sources    power    heat    100mm    thickness    materials    lot    electronics    close    atoms    decrease    area    reinforcing    millimetre    create    layer    ria    12c    industry    transport    action    material    gallium    hemt    wave    micro    carbon    size    substrates    shift    market    led    inches    semiconducting    conductivity    substantially    schottky    improvement    doped    penetration    circuit    components   

Project "OSIRIS" data sheet

The following table provides information about the project.

Coordinator
III-V LAB 

Organization address
address: 1 AVENUE AUGUSTIN FRESNEL CAMPUS POLYTECHNIQUE
city: PALAISEAU CEDEX
postcode: 91767
website: www.3-5lab.fr

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Project website http://osiris-ecselju.eu/
 Total cost 4˙487˙117 €
 EC max contribution 1˙819˙212 € (41%)
 Programme 1. H2020-EU.2.1.1.7. (ECSEL)
 Code Call ECSEL-2014-1
 Funding Scheme ECSEL-RIA
 Starting year 2015
 Duration (year-month-day) from 2015-05-01   to  2018-11-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    III-V LAB FR (PALAISEAU CEDEX) coordinator 637˙884.00
2    LINKOPINGS UNIVERSITET SE (LINKOPING) participant 316˙161.00
3    STMICROELECTRONICS SILICON CARBIDE AB SE (NORKOPING) participant 169˙919.00
4    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS FR (PARIS) participant 164˙396.00
5    ISOSILICON AS NO (KRISTIANSAND S) participant 153˙500.00
6    ASCATRON AB SE (KISTA) participant 147˙202.00
7    SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE SK (BRATISLAVA) participant 110˙517.00
8    INTRASPEC TECHNOLOGIES FR (Toulouse) participant 73˙042.00
9    UNITED MONOLITHIC SEMICONDUCTORS SAS FR (VILLEBON SUR YVETTE) participant 46˙591.00

Map

 Project objective

OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project proposes to elaborate innovative SiC material using isotopic sources. This material will offer thermal conductivity improvement of 30% which is important for devices dissipating a lot of power, in particular in SiC power electronics and in microwave device using GaN high electron mobility transistors (HEMT) grown on SiC semi-insulating substrates. OSIRIS project will allow reinforcing GaN technology penetration into the market by cost effectiveness of the SiC substrates and circuit performances improvement thanks to better heat spreading close to the dissipative area. For microwave GaN/SiC HEMT this isotopic approach could create a complete shift in the currently used substrate / GaN epi-wafer technology; it intends to grow high thermal conductivity (30%) semi-insulating SiC on top of low cost semiconducting SiC substrates (widely used by the power electronics and LED industries). Reduced layer thickness is necessary as only the top 50 to 100µm SiC wafer is really useful as the substrate itself is currently thinned to realise microstrip waveguided microwave circuits. For power electronics, this isotopic innovation will be essentially focused on thermal improvement, i.e. better electron mobility at a given power dissipation as mobility and drift mobility decrease with temperature and also better carrier transport thanks to lower scattering rates. Schottky and p-i-n diodes will be tested using this material, which however will have to be doped while microwave devices need semi-insulating materials. The improved thermal SiC properties will be obtained by using single isotopic atoms for silicon and carbon, namely 28Si and 12C. The SiC wafer size will be targeted to 100mm (4-inches) which is today widely used on industry.

 Deliverables

List of deliverables.
Report thermal conductivity of substrates and epiwafers Documents, reports 2019-10-08 10:16:33
Workshop on devices and applications Websites, patent fillings, videos etc. 2019-10-08 10:16:32
Project Video Websites, patent fillings, videos etc. 2019-10-08 10:16:32
Newsletter 2 Websites, patent fillings, videos etc. 2019-10-08 10:16:32
Workshop on material research Websites, patent fillings, videos etc. 2019-10-08 10:16:32
Project website Websites, patent fillings, videos etc. 2019-10-08 10:16:32
Newsletter 1 Websites, patent fillings, videos etc. 2019-10-08 10:16:32
Communication kit Websites, patent fillings, videos etc. 2019-10-08 10:16:32

Take a look to the deliverables list in detail:  detailed list of OSIRIS deliverables.

 Publications

year authors and title journal last update
List of publications.
2017 Ranim Mohamad, Antoine Béré, Jun Chen, Pierre Ruterana
Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)
published pages: 1600752, ISSN: 1862-6300, DOI: 10.1002/pssa.201600752
physica status solidi (a) 214/9 2019-10-08
2018 Ranim Mohamad
Relaxation de la contrainte dans les hétérostructures Al(Ga)InN/GaN pour applications électroniques: modélisation des propriétés physiques et rôle de l\'indium dans la dégradation des couches épitaxiales
published pages: , ISSN: , DOI:
2019-10-08
2016 G. Bascoul, F. Infante
Results on specific backside opening process dedicated to engineering package for SiC component
published pages: , ISSN: , DOI:
Association d\'analyse de défaillance Française (ANADEF) June 7-10 2016 Seignosse-Hosseg 2019-10-08
2016 A. Minj, D. Skuridina, D. Cavalcoli, A. Cros, P. Vogt, M. Kneissl, H. Ben Ammar and P. Ruterana
Surface properties of AlInN/GaN heterostructures
published pages: , ISSN: , DOI:
E-MRS Spring meeting, 2-6 May 2016 Li 2019-10-08
2016 A. Chvála, J. Marek, P. Príbytný, J. Kováč, S. Delage, J.-C. Jacquet and D. Donoval
Thermal Management of multifinger Power HEMTs Supported by 3-D Simulation
published pages: , ISSN: , DOI:
Advances in Electrical and Electronic Engineering Proceedings of the 4th internat 2019-10-08
2015 J. Kovác, jr, R. Szobolovský, A. Kósa, L. Stuchlíková and J. Kovác
Transfer of Knowledge from Scientific Research Projects towards Middle School Scholars
published pages: , ISSN: , DOI:
ICETA 2019-10-08
2016 Aleš Chvála, Juraj Marek, Arpád Kósa, Patrik Príbytný, Ľubica Stuchlíková and Daniel Donoval
2/3-D Device Simulations as an Effective Tool in Microelectronics Education
published pages: , ISSN: , DOI:
Proceeding EWME 11th European Workshop on Micro 2019-10-08

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The information about "OSIRIS" are provided by the European Opendata Portal: CORDIS opendata.

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