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TAKE5 SIGNED

Technology Advances and Key Enablers for 5 nm

Total Cost €

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EC-Contrib. €

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Partnership

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Project "TAKE5" data sheet

The following table provides information about the project.

Coordinator
ASML NETHERLANDS B.V. 

Organization address
address: DE RUN 6501
city: VELDHOVEN
postcode: 5504DR
website: www.asml.com

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Netherlands [NL]
 Total cost 149˙882˙181 €
 EC max contribution 28˙364˙017 € (19%)
 Programme 1. H2020-EU.2.1.1.7. (ECSEL)
 Code Call H2020-ECSEL-2015-2-IA-two-stage
 Funding Scheme ECSEL-IA
 Starting year 2016
 Duration (year-month-day) from 2016-04-01   to  2019-03-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    ASML NETHERLANDS B.V. NL (VELDHOVEN) coordinator 9˙450˙000.00
2    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM BE (LEUVEN) participant 9˙039˙656.00
3    CARL ZEISS SMT GMBH DE (OBERKOCHEN) participant 3˙600˙000.00
4    APPLIED MATERIALS ISRAEL LTD IL (REHOVOT) participant 2˙081˙250.00
5    NOVA MEASURING INSTRUMENTS LTD IL (REHOVOT) participant 1˙500˙000.00
6    KLA-TENCOR CORPORATION (ISRAEL) IL (MIGDAL HAEMEK) participant 901˙379.00
7    BRUKER JV ISRAEL LTD IL (MIGDAL HAEMEK) participant 662˙250.00
8    FEI ELECTRON OPTICS BV NL (EINDHOVEN) participant 559˙050.00
9    COVENTOR SARL FR (VILLEBON SUR YVETTE) participant 387˙156.00
10    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) participant 123˙268.00
11    ASM BELGIUM NV BE (HEVERLEE) participant 58˙300.00
12    LAM RESEARCH BELGIUM BE (LEUVEN) participant 1˙706.00

Map

 Project objective

The TAKE5 project is the next in a chain of thematically connected ENIAC JU KET pilot line projects which are associated with 450mm/300mm development for the 10nm technology node and the ECSEL JU project SeNaTe aiming at the 7nm technology node. The main objective of the TAKE5 project is the demonstration of 5nm patterning in line with the industry needs and the ITRS roadmap in the Advanced Patterning Center at the imec pilot line using innovative design and technology co-optimization, layout and device architecture exploration, and comprising demonstration of a lithographic platform for EUV technology, advanced process and holistic metrology platforms and new materials. A lithography scanner will be developed based on EUV technology to achieve the 5nm module patterning specification. Metrology platforms need to be qualified for 5nm patterning of 1D, 2D and 3D geometries with the appropriate precision and accuracy. For the 5nm technology modules new materials will need to be introduced. Introduction of these new materials brings challenges for all involved deposition processes and the related equipment set. Next to new deposition processes also the interaction of the involved materials with subsequent etch steps will be studied. The project will be dedicated to find the best options for patterning. The project relates to the ECSEL work program topic Process technologies – More Moore. It addresses and targets as set out in the MASP at the discovery of new Semiconductor Process, Equipment and Materials solutions for advanced CMOS processes that enable the nano-structuring of electronic devices with 5nm resolution in high-volume manufacturing and fast prototyping. The project touches the core of the continuation of Moore’s law which has celebrated its 50th anniversary and covers all aspects of 5nm patterning development.

 Publications

year authors and title journal last update
List of publications.
2017 Elizabeth Buitrago, Marieke Meeuwissen, Oktay Yildirim, Rolf Custers, Rik Hoefnagels, Gijsbert Rispens, Michaela Vockenhuber, Iacopo Mochi, Roberto Fallica, Zuhal Tasdemir, Yasin Ekinci
State-of-the-art EUV materials and processes for the 7nm node and beyond
published pages: 101430T, ISSN: , DOI: 10.1117/12.2260153
Extreme Ultraviolet (EUV) Lithography VIII 2017 2020-04-23
2019 Tal Itzkovich; Aner Avakrat; Shimon Levi; Omri Baum; Noam Amit; Kevin Houchens
SEM inspection and review method for addressing EUV stochastic defects
published pages: , ISSN: , DOI:
SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109591S (7 May 2019) 2019 2020-04-23
2017 Alberto Pirati, Jan van Schoot, Kars Troost, Rob van Ballegoij, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Niclas Mika, Jeannot Dredonx, Uwe Stamm, Bernhard Kneer, Bernd Thuering, Winfried Kaiser, Tilmann Heil, Sascha Migura
The future of EUV lithography: enabling Moore\'s Law in the next decade
published pages: 101430G, ISSN: , DOI: 10.1117/12.2261079
Extreme Ultraviolet (EUV) Lithography VIII 2017 2020-04-23
2017 Vivek Bakshi, Hakaru Mizoguchi, Ted Liang, Andrew Grenville, Jos Benschop
Special Section Guest Editorial: EUV Lithography for the 3-nm Node and Beyond
published pages: 1, ISSN: 1932-5150, DOI: 10.1117/1.jmm.16.4.041001
Journal of Micro/Nanolithography, MEMS, and MOEMS 16/04 2020-04-23
2017 Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, Thorsten Last
Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner
published pages: 101430D, ISSN: , DOI: 10.1117/12.2258025
Extreme Ultraviolet (EUV) Lithography VIII 2017 2020-04-23
2017 S. Guissi, W. F. Clark, A. Junker, J. Ervin, K. Greiner, D. Fried, B. Briggs, K. Devriendt, F. Sebaai, A. Charley, C. J. Wilson, J. Boemmels, Z. Tőkei
Modeling of Tone Inversion Process Flow for N5 Interconnect to Characterize Block Tip to Tip
published pages: , ISSN: , DOI:
Proceedings of IEEE IITC INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE 2020-04-23

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