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LATO TERMINATED

Large-Area Transparent Opto-Electronics using 2D Materials

Total Cost €

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EC-Contrib. €

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Partnership

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 LATO project word cloud

Explore the words cloud of the LATO project. It provides you a very rough idea of what is the project "LATO" about.

transition    volume    materials    property    mechanical    generation    efficiency    green    dramatically    nitride    molecular    class    gated    optical    confinement    deposition    sensitivity    limited    diverse    opto    thin    form    microscopy    research    semi    monolayered    arrays    probe    exfoliation    ratio    cvd    hundreds    glass    semiconductors    flexible    intensity    graphene    spectroscopy    correlations    benefits    black    imaging    cells    surface    panels    few    ultrathin    interdisciplinary    electron    vision    electronics    boron    expanded    fabrication    area    sensors    dichalcogenides    provides    vapour    quantum    atomic    structure    structural    transistors    isolation    opened    interlayer    insulating    wafer    blue    semiconducting    2004    isolated    phosphorous    interactions    solar    chemical    nanoscale    bulk    detectors    realize    small    grow    involve    crystals    depending    device    leds    electronic    material    metal    last    displays    emitting    first    transparent    metallic    2d    ranging    accelerated    commercial    ultra    light    photo    attracting    synthesis    transparency    composition   

Project "LATO" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF OXFORD 

Organization address
address: WELLINGTON SQUARE UNIVERSITY OFFICES
city: OXFORD
postcode: OX1 2JD
website: www.ox.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 1˙999˙318 €
 EC max contribution 1˙999˙318 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2016-COG
 Funding Scheme ERC-COG
 Starting year 2017
 Duration (year-month-day) from 2017-04-01   to  2022-03-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF OXFORD UK (OXFORD) coordinator 1˙999˙318.00

Map

 Project objective

Research in 2D materials has increased dramatically since the first isolation of graphene in 2004, with diverse interdisciplinary studies. In the last few years, 2D material research expanded beyond graphene by the development of other 2D materials, such as monolayered transition metal dichalcogenides, black phosphorous, and Boron Nitride. There are hundreds of possible 2D crystals that can be isolated, with properties ranging from metallic, semi-metallic, semiconducting to insulating, depending on the material composition. Semiconducting 2D materials have attracting interest in next-generation electronics/opto-electronics such as transistors, photo-gated transistors, photo-detectors, solar cells, and light emitting devices (LEDs), molecular sensors and optical imaging sensors. The unique structural form of 2D materials provides several benefits over other existing materials: ultrathin, flexible, highly transparent, large surface to volume ratio, and 2D quantum confinement. High transparency LEDs are required for applications in transparent displays on glass panels. Many 2D based opto-electronic devices have used mechanical exfoliation from bulk crystals, but this is limited to small areas. Recent work on chemical vapour deposition (CVD) to grow wafer-scale 2D materials has opened up exciting opportunities for commercial exploitation and has accelerated the intensity of research in this field towards real applications. The vision of this proposal is to realize a new class of ultra-thin, flexible, large-area, transparent, high-sensitivity opto-electronic device arrays based on all 2D materials, with a focus on imaging sensors and LEDs. This will involve wafer-scale CVD synthesis of 2D materials including novel blue and green 2D semiconductors, optical spectroscopy to probe the interlayer interactions, atomic level structure-property correlations using advanced electron microscopy, and the nanoscale fabrication and testing of high efficiency devices.

 Publications

year authors and title journal last update
List of publications.
2019 Gyeong Hee Ryu, Taishan Zhu, Jun Chen, Sapna Sinha, Viktoryia Shautsova, Jeffrey C. Grossman, Jamie H. Warner
Striated 2D Lattice with Sub‐nm 1D Etch Channels by Controlled Thermally Induced Phase Transformations of PdSe 2
published pages: 1904251, ISSN: 0935-9648, DOI: 10.1002/adma.201904251
Advanced Materials 2020-01-27
2018 Xiaochen Wang, Yuewen Sheng, Ren-Jie Chang, Ja Kyung Lee, Yingqiu Zhou, Sha Li, Tongxin Chen, Hefu Huang, Benjamin F. Porter, Harish Bhaskaran, Jamie H. Warner
Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of Ga 2 S 3
published pages: 7897-7903, ISSN: 2470-1343, DOI: 10.1021/acsomega.8b00749
ACS Omega 3/7 2020-01-27
2018 Qu Chen, Huashan Li, Si Zhou, Wenshuo Xu, Jun Chen, Hidetaka Sawada, Christopher S. Allen, Angus I. Kirkland, Jeffrey C. Grossman, Jamie H. Warner
Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS 2
published pages: 7721-7730, ISSN: 1936-0851, DOI: 10.1021/acsnano.8b01610
ACS Nano 12/8 2020-01-27
2018 Shanshan Wang, Hidetaka Sawada, Xiaoyu Han, Si Zhou, Sha Li, Zheng Xiao Guo, Angus I. Kirkland, Jamie H. Warner
Preferential Pt Nanocluster Seeding at Grain Boundary Dislocations in Polycrystalline Monolayer MoS 2
published pages: 5626-5636, ISSN: 1936-0851, DOI: 10.1021/acsnano.8b01418
ACS Nano 12/6 2020-01-27
2018 Gyeong Hee Ryu, Arthur France-Lanord, Yi Wen, Si Zhou, Jeffrey C. Grossman, Jamie H. Warner
Atomic Structure and Dynamics of Self-Limiting Sub-Nanometer Pores in Monolayer WS 2
published pages: , ISSN: 1936-0851, DOI: 10.1021/acsnano.8b07051
ACS Nano 2020-01-27
2017 Ren-Jie Chang, Haijie Tan, Xiaochen Wang, Benjamin Porter, Tongxin Chen, Yuewen Sheng, Yingqiu Zhou, Hefu Huang, Harish Bhaskaran, Jamie H. Warner
High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics
published pages: 13002-13010, ISSN: 1944-8244, DOI: 10.1021/acsami.8b01038
ACS Applied Materials & Interfaces 10/15 2020-01-27
2018 Yingqiu Zhou, Haijie Tan, Yuewen Sheng, Ye Fan, Wenshuo Xu, Jamie H. Warner
Utilizing Interlayer Excitons in Bilayer WS 2 for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors
published pages: 4669-4677, ISSN: 1936-0851, DOI: 10.1021/acsnano.8b01263
ACS Nano 12/5 2020-01-27
2018 Martin E. P. Tweedie, Yuewen Sheng, Syed Ghazi Sarwat, Wenshuo Xu, Harish Bhaskaran, Jamie H. Warner
Inhomogeneous Strain Release during Bending of WS 2 on Flexible Substrates
published pages: 39177-39186, ISSN: 1944-8244, DOI: 10.1021/acsami.8b12707
ACS Applied Materials & Interfaces 10/45 2020-01-27
2018 Wenshuo Xu, Daichi Kozawa, Yu Liu, Yuewen Sheng, Ke Wei, Volodymyr B. Koman, Shanshan Wang, Xiaochen Wang, Tian Jiang, Michael S. Strano, Jamie H. Warner
Determining the Optimized Interlayer Separation Distance in Vertical Stacked 2D WS 2 :hBN:MoS 2 Heterostructures for Exciton Energy Transfer
published pages: 1703727, ISSN: 1613-6810, DOI: 10.1002/smll.201703727
Small 14/13 2020-01-27
2018 Sapna Sinha, Yuewen Sheng, Ian Griffiths, Neil P. Young, Si Zhou, Angus I. Kirkland, Kyriakos Porfyrakis, Jamie H. Warner
In Situ Atomic-Level Studies of Gd Atom Release and Migration on Graphene from a Metallofullerene Precursor
published pages: 10439-10451, ISSN: 1936-0851, DOI: 10.1021/acsnano.8b06057
ACS Nano 12/10 2020-01-27
2018 Hefu Huang, Wenshuo Xu, Tongxin Chen, Ren-Jie Chang, Yuewen Sheng, Qianyang Zhang, Linlin Hou, Jamie H. Warner
High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene–MoS 2 Heterojunctions
published pages: 37258-37266, ISSN: 1944-8244, DOI: 10.1021/acsami.8b13507
ACS Applied Materials & Interfaces 10/43 2020-01-27

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