Explore the words cloud of the FLASH project. It provides you a very rough idea of what is the project "FLASH" about.
The following table provides information about the project.
UNIVERSITA DEGLI STUDI ROMA TRE
|Coordinator Country||Italy [IT]|
|Total cost||3˙206˙498 €|
|EC max contribution||3˙206˙498 € (100%)|
1. H2020-EU.1.2.1. (FET Open)
|Duration (year-month-day)||from 2017-11-01 to 2020-10-31|
Take a look of project's partnership.
|1||UNIVERSITA DEGLI STUDI ROMA TRE||IT (ROMA)||coordinator||837˙587.00|
|2||UNIVERSITY OF GLASGOW||UK (GLASGOW)||participant||749˙580.00|
|3||EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH||CH (ZUERICH)||participant||671˙581.00|
|4||IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK||DE (FRANKFURT ODER)||participant||640˙250.00|
|5||NEXTNANO GMBH||DE (POING)||participant||307˙500.00|
The THz part of the electromagnetic spectrum (0.3-10 THz) is currently exploited in commercial security screening systems (weapon detection beneath clothes), medical diagnostics tools (skin and breast cancer, burns, and in ophthalmology) and production-line monitoring (non-destructive test in the pharmaceutical industry). Existing sources of THz radiation are still too large and expensive to be a massively deployed in all of the existing and proposed applications, which include large bandwidth wireless communications and the extension of security screening to far-infrared spectroscopic identification of chemicals and explosives up to 10 THz. A lower production cost, a higher level of integration with control electronics, and a broader range of emitted wavelength are all desirable to expand the application of THz radiation. FLASH, will develop a room-temperature THz laser integrated on Si using CMOS technology-compatible processes and materials. The laser, of quantum cascade type, will be assembled using newly developed conduction-band germanium-rich heterostructures. It will leverage on the non-polar nature of silicon and germanium crystal lattices to potentially enabling room temperature operation, and will emit over 1 mW of power in the 1-10 THz range. In perspective, the development of the SiGe heterostructure platform will pave the way towards the new field of nonlinear silicon photonics based on band-structure engineering. The consortium includes EU leaders in silicon chip manufacturing, Si/SiGe/Ge epitaxial material growth, laser and band structure modelling, quantum cascade laser design and terahertz/infrared spectroscopy. The proposed device can provide a step-change in compactness, reduced cost, and functionality of source performance, thus enabling large scale use of terahertz radiation in existing fields of application, and open up new fields of application not yet commercially exploited, such as wireless communication and security imaging.
|Kick-Off Meeting Report||Documents, reports||2019-07-24 18:10:09|
|Project logo and website||Websites, patent fillings, videos etc.||2019-07-24 18:10:09|
|Data management plan||Open Research Data Pilot||2019-07-24 18:10:09|
|Demonstration of single plasmon and/or double plasmon WGs designs with optical losses below 25 cmâ€“1 for active material operating between 2 and 10 THz||Demonstrators, pilots, prototypes||2019-07-24 18:10:10|
|Project Management Guidelines||Documents, reports||2019-07-24 18:10:10|
Take a look to the deliverables list in detail: detailed list of FLASH deliverables.
|year||authors and title||journal||last update|
L. Persichetti, M. Fanfoni, M. De Seta, L. Di Gaspare, L. Ottaviano, C. Goletti, A. Sgarlata
Formation of extended thermal etch pits on annealed Ge wafers
published pages: 86-94, ISSN: 0169-4332, DOI: 10.1016/j.apsusc.2018.08.075
|Applied Surface Science 462||2019-10-29|
T. Grange, D. Stark, G. Scalari, J. Faist, L. Persichetti, L. Di Gaspare, M. De Seta, M. Ortolani, D.J. Paul, G. Capellini, S. Birner and M. Virgilio
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Greenâ€™s functions
published pages: , ISSN: 1077-3118, DOI:
|Applied Physics Letters||2019-10-08|
C. Ciano, M. Virgilio, M. Montanari, L. Persichetti, L. Di Gaspare, M. Ortolani, L. Baldassarre, M.H. Zoellner, O. Skibitzki, G. Scalari, J. Faist, D.J. Paul, M. Scuderi, G. Nicotra, T. Grange, S. Birner, G. Capellini, M. De Seta
Control of Electron-State Coupling in Asymmetric Ge / Si âˆ’ Ge Quantum Wells
published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.11.014003
|Physical Review Applied 11/1||2019-10-08|
M. Montanari, M. Virgilio, C. L. Manganelli, P. Zaumseil, M. H. Zoellner, Y. Hou, M. A. Schubert, L. Persichetti, L. Di Gaspare, M. De Seta, E. Vitiello, E. Bonera, F. Pezzoli, G. Capellini
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.98.195310
|Physical Review B 98/19||2019-10-08|
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The information about "FLASH" are provided by the European Opendata Portal: CORDIS opendata.