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FLASH SIGNED

Far-infrared Lasers Assembled using Silicon Heterostructures

Total Cost €

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EC-Contrib. €

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Partnership

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 FLASH project word cloud

Explore the words cloud of the FLASH project. It provides you a very rough idea of what is the project "FLASH" about.

ophthalmology    exploited    pharmaceutical    flash    heterostructure    imaging    beneath    crystal    compatible    manufacturing    communication    integration    massively    thz    electromagnetic    perspective    commercially    leaders    burns    monitoring    lower    temperature    skin    expensive    spectrum    quantum    leverage    nonlinear    structure    nature    desirable    materials    performance    band    emitted    laser    line    engineering    extension    tools    medical    conduction    sources    platform    photonics    clothes    chip    polar    security    spectroscopic    operation    screening    industry    assembled    pave    infrared    breast    silicon    wavelength    potentially    detection    terahertz    mw    identification    compactness    commercial    lattices    expand    cmos    spectroscopy    radiation    germanium    device    emit    ge    bandwidth    power    epitaxial    heterostructures    cancer    explosives    newly    cascade    chemicals    room    wireless    sige    communications    too    diagnostics    si    destructive    material    source    weapon    electronics   

Project "FLASH" data sheet

The following table provides information about the project.

Coordinator
UNIVERSITA DEGLI STUDI ROMA TRE 

Organization address
address: VIA OSTIENSE 159
city: ROMA
postcode: 154
website: www.uniroma3.it

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Italy [IT]
 Project website http://www.flash-project.eu
 Total cost 3˙206˙498 €
 EC max contribution 3˙206˙498 € (100%)
 Programme 1. H2020-EU.1.2.1. (FET Open)
 Code Call H2020-FETOPEN-1-2016-2017
 Funding Scheme RIA
 Starting year 2017
 Duration (year-month-day) from 2017-11-01   to  2020-10-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSITA DEGLI STUDI ROMA TRE IT (ROMA) coordinator 837˙587.00
2    UNIVERSITY OF GLASGOW UK (GLASGOW) participant 749˙580.00
3    EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH CH (ZUERICH) participant 671˙581.00
4    IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK DE (FRANKFURT ODER) participant 640˙250.00
5    NEXTNANO GMBH DE (POING) participant 307˙500.00

Map

 Project objective

The THz part of the electromagnetic spectrum (0.3-10 THz) is currently exploited in commercial security screening systems (weapon detection beneath clothes), medical diagnostics tools (skin and breast cancer, burns, and in ophthalmology) and production-line monitoring (non-destructive test in the pharmaceutical industry). Existing sources of THz radiation are still too large and expensive to be a massively deployed in all of the existing and proposed applications, which include large bandwidth wireless communications and the extension of security screening to far-infrared spectroscopic identification of chemicals and explosives up to 10 THz. A lower production cost, a higher level of integration with control electronics, and a broader range of emitted wavelength are all desirable to expand the application of THz radiation. FLASH, will develop a room-temperature THz laser integrated on Si using CMOS technology-compatible processes and materials. The laser, of quantum cascade type, will be assembled using newly developed conduction-band germanium-rich heterostructures. It will leverage on the non-polar nature of silicon and germanium crystal lattices to potentially enabling room temperature operation, and will emit over 1 mW of power in the 1-10 THz range. In perspective, the development of the SiGe heterostructure platform will pave the way towards the new field of nonlinear silicon photonics based on band-structure engineering. The consortium includes EU leaders in silicon chip manufacturing, Si/SiGe/Ge epitaxial material growth, laser and band structure modelling, quantum cascade laser design and terahertz/infrared spectroscopy. The proposed device can provide a step-change in compactness, reduced cost, and functionality of source performance, thus enabling large scale use of terahertz radiation in existing fields of application, and open up new fields of application not yet commercially exploited, such as wireless communication and security imaging.

 Deliverables

List of deliverables.
Kick-Off Meeting Report Documents, reports 2019-07-24 18:10:09
Project logo and website Websites, patent fillings, videos etc. 2019-07-24 18:10:09
Data management plan Open Research Data Pilot 2019-07-24 18:10:09
Demonstration of single plasmon and/or double plasmon WGs designs with optical losses below 25 cm–1 for active material operating between 2 and 10 THz Demonstrators, pilots, prototypes 2019-07-24 18:10:10
Project Management Guidelines Documents, reports 2019-07-24 18:10:10

Take a look to the deliverables list in detail:  detailed list of FLASH deliverables.

 Publications

year authors and title journal last update
List of publications.
2018 L. Persichetti, M. Fanfoni, M. De Seta, L. Di Gaspare, L. Ottaviano, C. Goletti, A. Sgarlata
Formation of extended thermal etch pits on annealed Ge wafers
published pages: 86-94, ISSN: 0169-4332, DOI: 10.1016/j.apsusc.2018.08.075
Applied Surface Science 462 2019-10-29
2019 T. Grange, D. Stark, G. Scalari, J. Faist, L. Persichetti, L. Di Gaspare, M. De Seta, M. Ortolani, D.J. Paul, G. Capellini, S. Birner and M. Virgilio
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green’s functions
published pages: , ISSN: 1077-3118, DOI:
Applied Physics Letters 2019-10-08
2019 C. Ciano, M. Virgilio, M. Montanari, L. Persichetti, L. Di Gaspare, M. Ortolani, L. Baldassarre, M.H. Zoellner, O. Skibitzki, G. Scalari, J. Faist, D.J. Paul, M. Scuderi, G. Nicotra, T. Grange, S. Birner, G. Capellini, M. De Seta
Control of Electron-State Coupling in Asymmetric Ge / Si − Ge Quantum Wells
published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.11.014003
Physical Review Applied 11/1 2019-10-08
2018 M. Montanari, M. Virgilio, C. L. Manganelli, P. Zaumseil, M. H. Zoellner, Y. Hou, M. A. Schubert, L. Persichetti, L. Di Gaspare, M. De Seta, E. Vitiello, E. Bonera, F. Pezzoli, G. Capellini
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.98.195310
Physical Review B 98/19 2019-10-08

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