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MUNDFAB SIGNED

Modeling Unconventional Nanoscaled Device FABrication

Total Cost €

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EC-Contrib. €

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Partnership

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MUNDFAB project word cloud

Explore the words cloud of the MUNDFAB project. It provides you a very rough idea of what is the project "MUNDFAB" about.

germanium generations aided situation epitaxial defect looped indispensable models investigations 3d power accordingly predicted predictivity dopants the3d continuum solid performance lkmc things performed structures continuing ppac sentaurus nano nor silicon calibrated alloys mobility world simulation requests faceting nanosecond decade topography architectures paradigm because fabrication kmc device computer workflow lose continued internet stages regrowth sufficient predictive whenever predict insufficient electron deposition sequential electrical tools unconventional virtual nanoscaled tcad temperature overcome formerly laser nanoelectronics layers first complemented data moore scaling industrial materials model energy commercial simulate area big technologies toolchain experimental complete activation roadmap annealing story time explicitly nanosized nereid integration

Project "MUNDFAB" data sheet

The following table provides information about the project.

Coordinator	FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Organization address address: HANSASTRASSE 27C city: MUNCHEN postcode: 80686 website: www.fraunhofer.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Germany [DE]
Total cost	3˙787˙988 €
EC max contribution	3˙787˙988 € (100%)
Programme	1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
Code Call	H2020-ICT-2019-2
Funding Scheme	RIA
Starting year	2020
Duration (year-month-day)	from 2020-01-01 to 2022-12-31

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Organization address address: HANSASTRASSE 27C city: MUNCHEN postcode: 80686 website: www.fraunhofer.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	coordinator	746˙047.00
2	COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Organization address address: RUE LEBLANC 25 city: PARIS 15 postcode: 75015 website: www.cea.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS 15)	participant	786˙618.00
3	CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS Organization address address: RUE MICHEL ANGE 3 city: PARIS postcode: 75794 website: www.cnrs.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS)	participant	660˙065.00
4	TECHNISCHE UNIVERSITAET WIEN TECHNISCHE UNIVERSITAET WIEN Organization address address: KARLSPLATZ 13 city: WIEN postcode: 1040 website: www.tuwien.ac.at contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (WIEN)	participant	600˙823.00
5	CONSIGLIO NAZIONALE DELLE RICERCHE CONSIGLIO NAZIONALE DELLE RICERCHE Organization address address: PIAZZALE ALDO MORO 7 city: ROMA postcode: 185 website: www.cnr.it contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	IT (ROMA)	participant	537˙395.00
6	SIEC BADAWCZA LUKASIEWICZ - INSTYTUT TECHNOLOGII MATERIALOW ELEKTRONICZNYCH SIEC BADAWCZA LUKASIEWICZ - INSTYTUT TECHNOLOGII MATERIALOW ELEKTRONICZNYCH Organization address address: UL. WOLCZYNSKA 133 city: WARSZAWA postcode: 01 919 website: www.itme.edu.pl contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	PL (WARSZAWA)	participant	302˙500.00
7	STMICROELECTRONICS CROLLES 2 SAS STMICROELECTRONICS CROLLES 2 SAS Organization address address: RUE JEAN MONNET 850 city: CROLLES postcode: 38920 website: www.st.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (CROLLES)	participant	154˙538.00

Map

Project objective

Because of power, energy, and cost reasons, a further development of big data and mobility applications as well as the Internet of Things will require continued Power-Performance-Area-and-Cost (PPAC, formerly More Moore) scaling. This is predicted to lead within less than a decade to a paradigm change towards the 3D sequential integration of nanosized structures. While technology-computer aided design (TCAD) is indispensable now particularly for the early stages of industrial research and development, we face the situation that classical continuum tools lose their predictivity when going towards the nano world and towards the very low temperature processes required for 3D sequential integration. They are then neither able to predict the reduced electrical activation of dopants, nor topography effects like faceting, nor defect formation and growth. Accordingly, the NEREID NanoElectronics Roadmap for Europe explicitly requests to “…develop new tools taking into account all the new materials, technologies and device architectures…” To overcome the insufficient state of models and tools for a predictive simulation of low-temperature processing of high-mobility layers like silicon-germanium alloys, dedicated experimental investigations will be performed for solid-phase epitaxial regrowth, epitaxial deposition, and nanosecond laser annealing. Model development will be based whenever possible on the KMC and LKMC tools of Sentaurus Process, complemented by model development with own tools only when the functionality of commercial products is not sufficient. Own tools will be looped into the Sentaurus TCAD workflow so that in the end we will for the first time present a complete calibrated toolchain able to simulate the virtual fabrication of the3D sequential integration of nanoscaled devices. This will allow continuing further on the success story of the use of TCAD for the early development of the next generations of unconventional nanoscaled electron devices.

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