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MUNDFAB SIGNED

Modeling Unconventional Nanoscaled Device FABrication

Total Cost €

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EC-Contrib. €

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Partnership

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 MUNDFAB project word cloud

Explore the words cloud of the MUNDFAB project. It provides you a very rough idea of what is the project "MUNDFAB" about.

regrowth    faceting    calibrated    decade    electrical    stages    mobility    paradigm    data    things    nanoscaled    annealing    energy    story    nano    nor    architectures    device    integration    formerly    germanium    simulate    nereid    activation    scaling    solid    first    insufficient    sufficient    complemented    accordingly    time    ppac    silicon    aided    simulation    workflow    model    big    structures    moore    predictivity    tools    indispensable    models    unconventional    world    requests    layers    temperature    experimental    because    computer    power    continuing    laser    predictive    whenever    sequential    topography    lkmc    looped    deposition    situation    nanosecond    kmc    internet    defect    fabrication    generations    complete    3d    the3d    dopants    explicitly    sentaurus    electron    virtual    epitaxial    commercial    materials    lose    continuum    investigations    tcad    nanosized    overcome    continued    toolchain    area    predict    alloys    nanoelectronics    roadmap    performed    performance    industrial    technologies    predicted   

Project "MUNDFAB" data sheet

The following table provides information about the project.

Coordinator
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 

Organization address
address: HANSASTRASSE 27C
city: MUNCHEN
postcode: 80686
website: www.fraunhofer.de

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Germany [DE]
 Total cost 3˙787˙988 €
 EC max contribution 3˙787˙988 € (100%)
 Programme 1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
 Code Call H2020-ICT-2019-2
 Funding Scheme RIA
 Starting year 2020
 Duration (year-month-day) from 2020-01-01   to  2022-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) coordinator 746˙047.00
2    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) participant 786˙618.00
3    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS FR (PARIS) participant 660˙065.00
4    TECHNISCHE UNIVERSITAET WIEN AT (WIEN) participant 600˙823.00
5    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) participant 537˙395.00
6    SIEC BADAWCZA LUKASIEWICZ - INSTYTUT TECHNOLOGII MATERIALOW ELEKTRONICZNYCH PL (WARSZAWA) participant 302˙500.00
7    STMICROELECTRONICS CROLLES 2 SAS FR (CROLLES) participant 154˙538.00

Map

 Project objective

Because of power, energy, and cost reasons, a further development of big data and mobility applications as well as the Internet of Things will require continued Power-Performance-Area-and-Cost (PPAC, formerly More Moore) scaling. This is predicted to lead within less than a decade to a paradigm change towards the 3D sequential integration of nanosized structures. While technology-computer aided design (TCAD) is indispensable now particularly for the early stages of industrial research and development, we face the situation that classical continuum tools lose their predictivity when going towards the nano world and towards the very low temperature processes required for 3D sequential integration. They are then neither able to predict the reduced electrical activation of dopants, nor topography effects like faceting, nor defect formation and growth. Accordingly, the NEREID NanoElectronics Roadmap for Europe explicitly requests to “…develop new tools taking into account all the new materials, technologies and device architectures…” To overcome the insufficient state of models and tools for a predictive simulation of low-temperature processing of high-mobility layers like silicon-germanium alloys, dedicated experimental investigations will be performed for solid-phase epitaxial regrowth, epitaxial deposition, and nanosecond laser annealing. Model development will be based whenever possible on the KMC and LKMC tools of Sentaurus Process, complemented by model development with own tools only when the functionality of commercial products is not sufficient. Own tools will be looped into the Sentaurus TCAD workflow so that in the end we will for the first time present a complete calibrated toolchain able to simulate the virtual fabrication of the3D sequential integration of nanoscaled devices. This will allow continuing further on the success story of the use of TCAD for the early development of the next generations of unconventional nanoscaled electron devices.

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The information about "MUNDFAB" are provided by the European Opendata Portal: CORDIS opendata.

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