GRADE

Graphene-based Devices and Circuits for RF Applications

 Coordinatore UNIVERSITAET SIEGEN 

 Organization address address: HERRENGARTEN 3
city: SIEGEN
postcode: 57072

contact info
Titolo: Mrs.
Nome: Tanja
Cognome: Heinzel
Email: send email
Telefono: +49 271 740 4833
Fax: +49 271 740 14833

 Nazionalità Coordinatore Germany [DE]
 Totale costo 5˙156˙629 €
 EC contributo 3˙650˙992 €
 Programma FP7-ICT
Specific Programme "Cooperation": Information and communication technologies
 Code Call FP7-ICT-2011-8
 Funding Scheme CP
 Anno di inizio 2012
 Periodo (anno-mese-giorno) 2012-10-01   -   2015-09-30

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    UNIVERSITAET SIEGEN

 Organization address address: HERRENGARTEN 3
city: SIEGEN
postcode: 57072

contact info
Titolo: Mrs.
Nome: Tanja
Cognome: Heinzel
Email: send email
Telefono: +49 271 740 4833
Fax: +49 271 740 14833

DE (SIEGEN) coordinator 0.00
2    ALMA MATER STUDIORUM-UNIVERSITA DI BOLOGNA

 Organization address address: Via Zamboni
city: BOLOGNA
postcode: 40126

contact info
Titolo: Prof.
Nome: Claudio
Cognome: Fiegna
Email: send email
Telefono: 390512000000
Fax: 390512000000

IT (BOLOGNA) participant 0.00
3    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

 Organization address address: RUE MICHEL -ANGE
city: PARIS
postcode: 75794

contact info
Titolo: Mr.
Nome: Gilles
Cognome: Pulvermuller
Email: send email
Telefono: +33 3 20 12 58 15
Fax: +33 3 20 63 00 43

FR (PARIS) participant 0.00
4    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

 Organization address address: RUE MICHEL -ANGE
city: PARIS
postcode: 75794

contact info
Titolo: Mrs.
Nome: Stéphanie
Cognome: Clement
Email: send email
Telefono: +33 5 40 00 36 26
Fax: +33 5 56 37 15 45

FR (PARIS) participant 0.00
5    CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA

 Organization address address: VIA TOFFANO
city: BOLOGNA
postcode: 40125

contact info
Titolo: Prof.
Nome: Baccarani
Cognome: Giorgio
Email: send email
Telefono: +39 051 209 5412
Fax: +39 051 209 5410

IT (BOLOGNA) participant 0.00
6    IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK

 Organization address address: IM TECHNOLOGIEPARK
city: FRANKFURT (ODER)
postcode: 15236

contact info
Titolo: Mr.
Nome: Uwe
Cognome: George
Email: send email
Telefono: 493356000000
Fax: 493356000000

DE (FRANKFURT (ODER)) participant 0.00
7    INFINEON TECHNOLOGIES AG

 Organization address address: Am Campeon 1-12
city: Neubiberg
postcode: 85579

contact info
Titolo: Mrs.
Nome: Mingxia
Cognome: Wu-Lutzenberger
Email: send email
Telefono: +4989234 20713

DE (Neubiberg) participant 0.00
8    Institut polytechnique de Bordeaux

 Organization address address: AV DU DOCTEUR ALBERT SCHWEITZER
city: TALENCE
postcode: 33402

contact info
Titolo: Mrs.
Nome: Stephanie
Cognome: Clement
Email: send email
Telefono: +33 5 40 00 36 26
Fax: +33 5 56 37 15 45

FR (TALENCE) participant 0.00
9    KUNGLIGA TEKNISKA HOEGSKOLAN

 Organization address address: Valhallavaegen
city: STOCKHOLM
postcode: 10044

contact info
Titolo: Mr.
Nome: Simon
Cognome: Demir
Email: send email
Telefono: +46 8 7904235
Fax: +46 8 245435

SE (STOCKHOLM) participant 0.00
10    UNIVERSITA DEGLI STUDI DI UDINE

 Organization address address: VIA PALLADIO
city: UDINE
postcode: 33100

contact info
Titolo: Prof.
Nome: Roberto
Cognome: RINALDO
Email: send email
Telefono: +39 0432 558252
Fax: +39 4032 558251

IT (UDINE) participant 0.00
11    UNIVERSITA DI PISA

 Organization address address: Lungarno Pacinotti
city: PISA
postcode: 56126

contact info
Titolo: Dr.
Nome: Giovanna
Cognome: Carcea
Email: send email
Telefono: +39 050 2211214

IT (PISA) participant 0.00
12    UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I

 Organization address address: CITE SCIENTIFIQUE
city: VILLENEUVE D'ASCQ
postcode: 59655

contact info
Titolo: Mrs.
Nome: Muriel
Cognome: VERNAY
Email: send email
Telefono: +33 3 20 43 65 13
Fax: +33 3 20 33 61 95

FR (VILLENEUVE D'ASCQ) participant 0.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

gfet    manufacturing    communication    graphene    thz    gbt    integration    semiconductor    grade    transistors   

 Obiettivo del progetto (Objective)

GRADE is a three-year STREP proposal focused on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. Graphene field effect transistors (GFET) use graphene as a high-mobility transistor channel. Alternative 'graphene base transistors' (GBT) are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfill this requirement. The proposed research enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing.To achieve these goals, GRADE unites a powerful consortium:Four academic partners, two of them with a strong experimental background and excellent processing facilities, one focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design.One research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing.One global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.

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