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Single-Hole Pumping in Silicon

Total Cost €


EC-Contrib. €






 SINHOPSI project word cloud

Explore the words cloud of the SINHOPSI project. It provides you a very rough idea of what is the project "SINHOPSI" about.

ing    compare    standards    nano    last    single    electric    semiconductor    artefacts    significantly    nanotechnology    phenomena    world    ascribable    carries    oscillators    agreed    mass    true    fact    suppressing    ultimately    clocking    equivalent    transport    elementary    pumping    electron    perform    decades    linked    holes    prototypes    generate    produces    carrier    reference    shift    ampere    globally    metrology    quantities    accurate    silicon    electrons    cycle    wavefunction    charge    poor    performances    practical    pump    positive    errors    serve    industrial    electrical    units    economic    benefits    realize    underpinning    constants    pumps    fabricate    larger    fidelity    si    hole    limitation    standard    physical    stability    determined    driving    transfer    nature    technological    quantum    spatial    currents    reliability    experimentally    operate    record    confined    primary    few    material    employed    first    historically    tightly    confinement    consistent   

Project "SINHOPSI" data sheet

The following table provides information about the project.


Organization address
postcode: CB2 1TN

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Project website
 Total cost 183˙454 €
 EC max contribution 183˙454 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2014
 Funding Scheme MSCA-IF-EF-RI
 Starting year 2016
 Duration (year-month-day) from 2016-01-11   to  2018-01-10


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 


 Project objective

A globally consistent system of measurement units and reference standards is a necessary underpinning feature of most technological, industrial and economic activities. In fact, to perform measurements of physical quantities, record and compare them in a consistent way, systems of units and standards have been historically developed and agreed upon. However, in the last few decades, the ever-increasing need for stability and reliability has determined a shift from standards based on material artefacts or prototypes towards those based on physical phenomena and true constants of nature. The focus of this proposal is the development of a novel quantum technology to generate highly accurate electric currents directly linked to the elementary charge. This could serve as the practical implementation for a quantum-based standard for the SI unit ampere, which is a long-standing goal in electrical metrology. Semiconductor nano-scale charge pumps have been used in the last three decades to generate accurate electric currents by clocking the transport of single electrons with driving oscillators. The main limitation to the fidelity of the charge transfer is ultimately ascribable to the poor spatial confinement of electrons that produces errors during the pumping cycle. In this project silicon-based nanotechnology will be employed to realize and operate the world-first charge pump based on the transfer of single holes rather than electrons. A hole carries the positive equivalent of an elementary charge, but its effective mass can be significantly larger than the electron's. The resulting tightly confined charge carrier wavefunction is expected to provide significant benefits in suppressing pumping errors. The primary objectives will be to develop the underpinning technology to fabricate and operate the first single-hole pump, and experimentally assess its performances in comparison to the well-established electron-based technology.


year authors and title journal last update
List of publications.
2018 A. Rossi, J. Klochan, J. Timoshenko, F. E. Hudson, M. Mottonen, S. Rogge, A. S. Dzurak, V. Kashcheyevs, G. C. Tettamanzi
Gigahertz Single-Electron Pumping Mediated by Parasitic States
published pages: , ISSN: , DOI:
2016 John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson, Andrew D. Baczewski, Erik Nielsen, Leon Maurer, Inès Montaño, Martin Rudolph, M. S. Carroll, C. H. Yang, A. Rossi, A. S. Dzurak, Richard P. Muller
Valley splitting of single-electron Si MOS quantum dots
published pages: 253101, ISSN: 0003-6951, DOI: 10.1063/1.4972514
Applied Physics Letters 109/25 2019-06-13
2017 R. Zhao, A. Rossi, S. P. Giblin, J. D. Fletcher, F. E. Hudson, M. Möttönen, M. Kataoka, A. S. Dzurak
Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping
published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.8.044021
Physical Review Applied 8/4 2019-06-13
2017 A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba
Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
published pages: 212101, ISSN: 0003-6951, DOI: 10.1063/1.4984224
Applied Physics Letters 110/21 2019-06-13
2018 Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba
Radio-frequency capacitive gate-based sensing
published pages: , ISSN: , DOI:

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