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WInSiC4AP SIGNED

Wide band gap Innovative SiC for Advanced Power

Total Cost €

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EC-Contrib. €

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Partnership

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Project "WInSiC4AP" data sheet

The following table provides information about the project.

Coordinator
DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL 

Organization address
address: ZONA INDUSTRIALE VIII STRADA SN
city: CATANIA
postcode: 95121
website: n.a.

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Italy [IT]
 Project website http://www.winsic4ap-project.org
 Total cost 27˙336˙714 €
 EC max contribution 4˙121˙238 € (15%)
 Programme 1. H2020-EU.2.1.1.7. (ECSEL)
 Code Call H2020-ECSEL-2016-1-RIA-two-stage
 Funding Scheme ECSEL-RIA
 Starting year 2017
 Duration (year-month-day) from 2017-06-01   to  2020-11-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL IT (CATANIA) coordinator 105˙000.00
2    VALEO SYSTEMES DE CONTROLE MOTEUR SAS FR (Cergy) participant 1˙185˙032.00
3    PUNCH POWERTRAIN FRANCE FR (CLERMOND FERRAND) participant 609˙675.00
4    SAFRAN ELECTRICAL & POWER FR (BLAGNAC) participant 354˙321.00
5    APSI3D FR (TARBES) participant 332˙894.00
6    CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA IT (BOLOGNA) participant 297˙500.00
7    ZODIAC AERO ELECTRIC SAS FR (MONTREUIL) participant 272˙428.00
8    ENEL X SRL IT (ROMA) participant 217˙500.00
9    GOTTFRIED WILHELM LEIBNIZ UNIVERSITAET HANNOVER DE (HANNOVER) participant 182˙314.00
10    UNIVERSITE DE TOURS FR (TOURS) participant 163˙712.00
11    WURTH ELEKTRONIK EISOS GMBH & CO KG DE (WALDENBURG) participant 156˙842.00
12    CESKE VYSOKE UCENI TECHNICKE V PRAZE CZ (PRAHA) participant 104˙037.00
13    INSTITUT MIKROELEKTRONICKYCH APLIKACI S.R.O. CZ (PRAHA 5 - SMICHOV) participant 90˙750.00
14    NEXTER SYSTEMS FR (ROANNE) participant 49˙229.00
15    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) participant 0.00
16    DISTRETTO TECNOLOGICO AEROSPAZIALE DELLA CAMPANIA SCARL IT (NAPOLI) participant 0.00
17    E-DISTRIBUZIONE SPA IT (ROMA) participant 0.00
18    NEXTER ELECTRONICS FR (VERSAILLES) participant 0.00
19    S.A.T.SICILIANA ARTICOLI TECNICI SRL IT (CATANIA) participant 0.00
20    SOFTECO SISMAT SRL IT (GENOVA) participant 0.00
21    STMICROELECTRONICS SRL IT (AGRATE BRIANZA) participant 0.00
22    UNIVERSITA DEGLI STUDI DI CATANIA IT (CATANIA) participant 0.00
23    UNIVERSITA DEGLI STUDI DI MESSINA IT (MESSINA) participant 0.00

Map

 Project objective

WInSiC4AP core objective is to contribute in developing reliable technology bricks for efficient and cost-effective applications addressing social challenges and market segments where Europe is a recognized global leader as well as automotive, avionics, railway and defence. WInSiC4AP approach is to rely on the strength of vertical integration allowing optimization, technologies fitting application requirements, developing the full ecosystem and approach relevant issues as reliability in the full scope. That enhances the competitiveness of EU- Industries as well as TIER1 and TIER2 down to the value chain in a market context where other countries today, such as the USA or Japan, are advancing and new players accessing SiC enter in the market.

New topologies and architecture will be developed for targeted application simulating operational environment, at laboratory level, driving the needed and still missed technologies, components and demonstrators to fill the gap between current state of the art and the very high demanding specifications. WInSiC4AP framework has been built so that companies working in different domains (i.e. automotive car maker and TIER1-2 and avionics, railway and defence TIER1-TIER2) and in the vertical value chain (semiconductor suppliers, companies manufacturing inductors and capacitors) as well as academic entities and laboratories will collaborate to co-design solutions, solve problems and exchange know-how, such that unforeseen results may also emerge. WInSiC4AP will be supported with synergy between ECSEL JU and ESI funding enabling complementary activities with relevant economic and social impact envisage in a less development region of Union.

 Deliverables

List of deliverables.
D7a.2.1 - First WInSiC4AP International Workshop Websites, patent fillings, videos etc. 2020-04-08 23:56:48
D7a.1.2.3 - Database of Dissemination activities Documents, reports 2020-04-08 23:56:48
D7a.1.1 - Project web site Websites, patent fillings, videos etc. 2020-04-08 23:56:46
D7a.1.2.1 - Database of Dissemination activities Documents, reports 2020-04-08 23:56:46
D7a.1.2.2 - Database of Dissemination activities Documents, reports 2020-04-08 23:56:46

Take a look to the deliverables list in detail:  detailed list of WInSiC4AP deliverables.

 Publications

year authors and title journal last update
List of publications.
2018 M. Cacciato, F. Scrimizzi, A. Palermo, F. Gennaro, D. Nardo
Power devices comparison in synchronous half bridge topology, IEEE Proc. of the 20th European Conference on Power Electronics and Applications
published pages: , ISSN: , DOI:
Proc. of the 20th European Conference on Power Electronics and Applications 2020-04-08
2019 P. Fiorenza, M. Vivona, S. Di Franco, E. Smecca, S. Sanzaro, A. Alberti, M. Saggio, F. Roccaforte
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
published pages: 290-294, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2019.01.017
Materials Science in Semiconductor Processing 93 2020-04-08
2019 J. Domingo Salvany, P. Decroux, C. Degoutte, L. Liggio, S. Frisella
HVDC Intelligent Power Switchs for aircraft power distribution
published pages: , ISSN: , DOI:
Proc. of MEA 2019 : More Electric Aircraft 2020-04-08
2019 G. Consentino, E. Guevara, L. Sanchez, F. Crupi, S. Reggiani, G. Meneghesso
\"Threshold Voltage Instability in SiC Power MOSFETs\"\",\"
published pages: , ISSN: , DOI:
Proc. of the PCIM European Conference 2019: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management 2020-04-08
2019 A. Imbruglia, M. Saggio, S. Cascino, A. Minotti, M. Renna, G. Gullotta, J. Favre, F. Roccaforte, P. Fiorenza, L. Liggio, S. Frisella, A.Lionetto
WInSiC4AP: Wide band gap Innovative SiC for Advanced Power
published pages: , ISSN: , DOI:
Proc. of the AEIT - International Conference of Electrical and Electronic Technologies for Automotive 2020-04-08
2019 S. Rascunà, P. Badalà, C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
published pages: 62-66, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2019.02.031
Materials Science in Semiconductor Processing 97 2020-04-08
2018 Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte
Electron trapping at SiO 2 /4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
published pages: 395702, ISSN: 0957-4484, DOI: 10.1088/1361-6528/aad129
Nanotechnology 29/39 2020-04-08
2018 Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte
Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2 /4H-SiC MOS capacitors
published pages: 38-42, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.11.024
Materials Science in Semiconductor Processing 78 2020-04-08
2018 Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte
Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors
published pages: 473-476, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.924.473
Materials Science Forum 924 2020-04-08
2018 Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte
Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs
published pages: 285-288, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.924.285
Materials Science Forum 924 2020-04-08
2018 Massimo Zimbone, Nicolò Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, Maria Concetta Canino, Maria Ausilia di Stefano, Simona Lorenti, Francesco La Via
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
published pages: 357-360, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.924.357
Materials Science Forum 924 2020-04-08
2018 Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
published pages: 339-344, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.924.339
Materials Science Forum 924 2020-04-08

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