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MuStMAM SIGNED

Multi State Memory in Artificial Multiferroics

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 MuStMAM project word cloud

Explore the words cloud of the MuStMAM project. It provides you a very rough idea of what is the project "MuStMAM" about.

tunneling    smaller    investing    eb    bits    effect    film    2020    levels    additional    data    add    nanoscale    store    universe    device    creates    overcome    size    excited    miniaturisation    our    thin    becomes    enormous    demand    electric    university    interface    mftj    exchange    continues    magneto    ferroelectric    ter    storage    stored    quality    limitations    electro    fm    distance    multiple    opportunity    fe    electronic    artificial    stars    sustain    density    unveil    tunnel    cambridge    bias    ferroic    layer    doubling    coupling    physical    single    memory    materials    market    marketable    adjacent    resistance    technologies    digital    material    position    gmr    creation    generation    tmr    approaching    resistive    heterostructure    prospect    nearly    giant    coupled    multistate    groups    multiferroic    area    argument    antiferromagnetic    junctions    contain    degree    outside    magnetoelectric    ferromagnetic    dimension    transport   

Project "MuStMAM" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE 

Organization address
address: TRINITY LANE THE OLD SCHOOLS
city: CAMBRIDGE
postcode: CB2 1TN
website: www.cam.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 195˙454 €
 EC max contribution 195˙454 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2018
 Duration (year-month-day) from 2018-03-01   to  2020-03-13

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) coordinator 195˙454.00

Map

 Project objective

Our digital universe is doubling in size every two years, so that by 2020, it will contain nearly as many digital bits as there are stars in our physical universe! Existing memory technologies are approaching their physical storage limitations as miniaturisation of electronic devices continues. This requires significant development of advanced next generation data storage technologies to sustain consumer demand for increasing levels of data creation. New materials and technology to store more data in smaller area are required. There is a strong argument in favour of investing in multiferroic material that is still at a distance from a marketable position. In this proposed project we will investigate the prospect of exchange bias coupled artificial multiferroic material for high density memory device to overcome the market demand. In recent research, multiferroic tunnel junctions (MFTJ) have excited enormous interest for high-density memory devices. In this project, we propose a heterostructure of ferromagnetic (FM) and ferroelectric (FE) materials where the interface becomes antiferromagnetic layer and creates exchange bias (EB) coupling with adjacent FM layer. Due to induced EB, the system will add additional functionality giant magneto resistance (GMR) along with tunneling electro-resistance (TER) and magneto-resistance (TMR) in a single MFTJ, and allow multiple resistive states per memory element at very low dimension where multiple bits can be stored. During the proposed project magnetoelectric process in artificial multiferroic systems will be investigated to unveil possible nanoscale coupling between different ferroic parameters, magneto-electric transport processes and effect of exchange bias on them. Heterostructure thin film with high degree of quality will be studied aiming high density multistate memory device. The project will offer the opportunity to work in collaboration with other research groups both within and outside the University of Cambridge.

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The information about "MUSTMAM" are provided by the European Opendata Portal: CORDIS opendata.

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