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MuStMAM SIGNED

Multi State Memory in Artificial Multiferroics

Total Cost €

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EC-Contrib. €

0

Partnership

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 MuStMAM project word cloud

Explore the words cloud of the MuStMAM project. It provides you a very rough idea of what is the project "MuStMAM" about.

store    excited    physical    continues    transport    dimension    tunnel    film    magnetoelectric    density    demand    contain    antiferromagnetic    area    unveil    creation    coupled    resistance    technologies    material    multiferroic    exchange    coupling    add    levels    smaller    electronic    eb    single    additional    fe    thin    materials    position    layer    ferroic    marketable    overcome    ferroelectric    miniaturisation    approaching    bits    tunneling    ferromagnetic    storage    device    doubling    sustain    opportunity    university    stars    digital    bias    cambridge    groups    resistive    2020    magneto    adjacent    market    argument    fm    giant    tmr    heterostructure    becomes    junctions    size    quality    prospect    investing    distance    multiple    enormous    electric    nearly    gmr    interface    multistate    effect    artificial    electro    generation    data    ter    stored    outside    limitations    our    memory    degree    nanoscale    universe    creates    mftj   

Project "MuStMAM" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE 

Organization address
address: TRINITY LANE THE OLD SCHOOLS
city: CAMBRIDGE
postcode: CB2 1TN
website: www.cam.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 195˙454 €
 EC max contribution 195˙454 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2018
 Duration (year-month-day) from 2018-03-01   to  2020-03-13

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) coordinator 195˙454.00

Map

 Project objective

Our digital universe is doubling in size every two years, so that by 2020, it will contain nearly as many digital bits as there are stars in our physical universe! Existing memory technologies are approaching their physical storage limitations as miniaturisation of electronic devices continues. This requires significant development of advanced next generation data storage technologies to sustain consumer demand for increasing levels of data creation. New materials and technology to store more data in smaller area are required. There is a strong argument in favour of investing in multiferroic material that is still at a distance from a marketable position. In this proposed project we will investigate the prospect of exchange bias coupled artificial multiferroic material for high density memory device to overcome the market demand. In recent research, multiferroic tunnel junctions (MFTJ) have excited enormous interest for high-density memory devices. In this project, we propose a heterostructure of ferromagnetic (FM) and ferroelectric (FE) materials where the interface becomes antiferromagnetic layer and creates exchange bias (EB) coupling with adjacent FM layer. Due to induced EB, the system will add additional functionality giant magneto resistance (GMR) along with tunneling electro-resistance (TER) and magneto-resistance (TMR) in a single MFTJ, and allow multiple resistive states per memory element at very low dimension where multiple bits can be stored. During the proposed project magnetoelectric process in artificial multiferroic systems will be investigated to unveil possible nanoscale coupling between different ferroic parameters, magneto-electric transport processes and effect of exchange bias on them. Heterostructure thin film with high degree of quality will be studied aiming high density multistate memory device. The project will offer the opportunity to work in collaboration with other research groups both within and outside the University of Cambridge.

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The information about "MUSTMAM" are provided by the European Opendata Portal: CORDIS opendata.

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