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MuStMAM SIGNED

Multi State Memory in Artificial Multiferroics

Total Cost €

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EC-Contrib. €

0

Partnership

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 MuStMAM project word cloud

Explore the words cloud of the MuStMAM project. It provides you a very rough idea of what is the project "MuStMAM" about.

contain    additional    electronic    interface    prospect    fm    becomes    electro    artificial    sustain    ferroic    stored    store    overcome    electric    dimension    university    continues    density    unveil    universe    memory    marketable    digital    ferromagnetic    creation    coupling    miniaturisation    generation    degree    mftj    resistive    ter    market    area    creates    adjacent    magneto    transport    demand    data    nearly    eb    bias    opportunity    position    resistance    effect    smaller    technologies    groups    bits    multistate    exchange    distance    tunnel    nanoscale    excited    ferroelectric    investing    material    fe    single    coupled    layer    tunneling    2020    junctions    enormous    tmr    giant    antiferromagnetic    magnetoelectric    size    device    multiple    multiferroic    gmr    approaching    limitations    our    storage    heterostructure    thin    quality    cambridge    materials    levels    stars    doubling    add    outside    argument    film    physical   

Project "MuStMAM" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE 

Organization address
address: TRINITY LANE THE OLD SCHOOLS
city: CAMBRIDGE
postcode: CB2 1TN
website: www.cam.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 195˙454 €
 EC max contribution 195˙454 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2018
 Duration (year-month-day) from 2018-03-01   to  2020-03-13

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) coordinator 195˙454.00

Map

 Project objective

Our digital universe is doubling in size every two years, so that by 2020, it will contain nearly as many digital bits as there are stars in our physical universe! Existing memory technologies are approaching their physical storage limitations as miniaturisation of electronic devices continues. This requires significant development of advanced next generation data storage technologies to sustain consumer demand for increasing levels of data creation. New materials and technology to store more data in smaller area are required. There is a strong argument in favour of investing in multiferroic material that is still at a distance from a marketable position. In this proposed project we will investigate the prospect of exchange bias coupled artificial multiferroic material for high density memory device to overcome the market demand. In recent research, multiferroic tunnel junctions (MFTJ) have excited enormous interest for high-density memory devices. In this project, we propose a heterostructure of ferromagnetic (FM) and ferroelectric (FE) materials where the interface becomes antiferromagnetic layer and creates exchange bias (EB) coupling with adjacent FM layer. Due to induced EB, the system will add additional functionality giant magneto resistance (GMR) along with tunneling electro-resistance (TER) and magneto-resistance (TMR) in a single MFTJ, and allow multiple resistive states per memory element at very low dimension where multiple bits can be stored. During the proposed project magnetoelectric process in artificial multiferroic systems will be investigated to unveil possible nanoscale coupling between different ferroic parameters, magneto-electric transport processes and effect of exchange bias on them. Heterostructure thin film with high degree of quality will be studied aiming high density multistate memory device. The project will offer the opportunity to work in collaboration with other research groups both within and outside the University of Cambridge.

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The information about "MUSTMAM" are provided by the European Opendata Portal: CORDIS opendata.

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