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MuStMAM SIGNED

Multi State Memory in Artificial Multiferroics

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 MuStMAM project word cloud

Explore the words cloud of the MuStMAM project. It provides you a very rough idea of what is the project "MuStMAM" about.

market    add    ferroelectric    junctions    fe    material    giant    storage    position    area    overcome    bits    ter    doubling    artificial    coupling    thin    distance    film    resistance    miniaturisation    nanoscale    tunnel    prospect    universe    data    university    multistate    quality    electric    memory    tmr    device    2020    sustain    levels    investing    density    demand    marketable    exchange    ferromagnetic    bias    opportunity    degree    approaching    heterostructure    resistive    multiple    becomes    tunneling    groups    electro    stars    our    dimension    creation    materials    transport    continues    outside    adjacent    antiferromagnetic    multiferroic    argument    physical    cambridge    unveil    digital    nearly    mftj    magneto    layer    stored    single    smaller    magnetoelectric    eb    contain    store    limitations    electronic    gmr    enormous    size    technologies    additional    effect    excited    fm    ferroic    generation    coupled    creates    interface   

Project "MuStMAM" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE 

Organization address
address: TRINITY LANE THE OLD SCHOOLS
city: CAMBRIDGE
postcode: CB2 1TN
website: www.cam.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 195˙454 €
 EC max contribution 195˙454 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2018
 Duration (year-month-day) from 2018-03-01   to  2020-03-13

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) coordinator 195˙454.00

Map

Leaflet | Map data © OpenStreetMap contributors, CC-BY-SA, Imagery © Mapbox

 Project objective

Our digital universe is doubling in size every two years, so that by 2020, it will contain nearly as many digital bits as there are stars in our physical universe! Existing memory technologies are approaching their physical storage limitations as miniaturisation of electronic devices continues. This requires significant development of advanced next generation data storage technologies to sustain consumer demand for increasing levels of data creation. New materials and technology to store more data in smaller area are required. There is a strong argument in favour of investing in multiferroic material that is still at a distance from a marketable position. In this proposed project we will investigate the prospect of exchange bias coupled artificial multiferroic material for high density memory device to overcome the market demand. In recent research, multiferroic tunnel junctions (MFTJ) have excited enormous interest for high-density memory devices. In this project, we propose a heterostructure of ferromagnetic (FM) and ferroelectric (FE) materials where the interface becomes antiferromagnetic layer and creates exchange bias (EB) coupling with adjacent FM layer. Due to induced EB, the system will add additional functionality giant magneto resistance (GMR) along with tunneling electro-resistance (TER) and magneto-resistance (TMR) in a single MFTJ, and allow multiple resistive states per memory element at very low dimension where multiple bits can be stored. During the proposed project magnetoelectric process in artificial multiferroic systems will be investigated to unveil possible nanoscale coupling between different ferroic parameters, magneto-electric transport processes and effect of exchange bias on them. Heterostructure thin film with high degree of quality will be studied aiming high density multistate memory device. The project will offer the opportunity to work in collaboration with other research groups both within and outside the University of Cambridge.

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The information about "MUSTMAM" are provided by the European Opendata Portal: CORDIS opendata.

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