Opendata, web and dolomites

MuStMAM SIGNED

Multi State Memory in Artificial Multiferroics

Total Cost €

0

EC-Contrib. €

0

Partnership

0

Views

0

 MuStMAM project word cloud

Explore the words cloud of the MuStMAM project. It provides you a very rough idea of what is the project "MuStMAM" about.

memory    ferroelectric    cambridge    marketable    distance    university    demand    artificial    overcome    investing    ter    film    our    multistate    technologies    becomes    physical    exchange    bias    opportunity    tunneling    dimension    add    giant    nearly    device    market    approaching    size    coupled    digital    electric    resistance    resistive    creation    eb    excited    mftj    area    ferroic    prospect    tmr    heterostructure    multiferroic    density    stars    contain    antiferromagnetic    argument    interface    degree    layer    miniaturisation    limitations    continues    effect    2020    fe    magneto    creates    single    outside    sustain    nanoscale    storage    multiple    magnetoelectric    gmr    transport    stored    doubling    junctions    groups    quality    enormous    unveil    smaller    additional    bits    store    coupling    universe    data    tunnel    fm    thin    electro    electronic    material    ferromagnetic    levels    materials    position    adjacent    generation   

Project "MuStMAM" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE 

Organization address
address: TRINITY LANE THE OLD SCHOOLS
city: CAMBRIDGE
postcode: CB2 1TN
website: www.cam.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 195˙454 €
 EC max contribution 195˙454 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2018
 Duration (year-month-day) from 2018-03-01   to  2020-03-13

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) coordinator 195˙454.00

Map

 Project objective

Our digital universe is doubling in size every two years, so that by 2020, it will contain nearly as many digital bits as there are stars in our physical universe! Existing memory technologies are approaching their physical storage limitations as miniaturisation of electronic devices continues. This requires significant development of advanced next generation data storage technologies to sustain consumer demand for increasing levels of data creation. New materials and technology to store more data in smaller area are required. There is a strong argument in favour of investing in multiferroic material that is still at a distance from a marketable position. In this proposed project we will investigate the prospect of exchange bias coupled artificial multiferroic material for high density memory device to overcome the market demand. In recent research, multiferroic tunnel junctions (MFTJ) have excited enormous interest for high-density memory devices. In this project, we propose a heterostructure of ferromagnetic (FM) and ferroelectric (FE) materials where the interface becomes antiferromagnetic layer and creates exchange bias (EB) coupling with adjacent FM layer. Due to induced EB, the system will add additional functionality giant magneto resistance (GMR) along with tunneling electro-resistance (TER) and magneto-resistance (TMR) in a single MFTJ, and allow multiple resistive states per memory element at very low dimension where multiple bits can be stored. During the proposed project magnetoelectric process in artificial multiferroic systems will be investigated to unveil possible nanoscale coupling between different ferroic parameters, magneto-electric transport processes and effect of exchange bias on them. Heterostructure thin film with high degree of quality will be studied aiming high density multistate memory device. The project will offer the opportunity to work in collaboration with other research groups both within and outside the University of Cambridge.

Are you the coordinator (or a participant) of this project? Plaese send me more information about the "MUSTMAM" project.

For instance: the website url (it has not provided by EU-opendata yet), the logo, a more detailed description of the project (in plain text as a rtf file or a word file), some pictures (as picture files, not embedded into any word file), twitter account, linkedin page, etc.

Send me an  email (fabio@fabiodisconzi.com) and I put them in your project's page as son as possible.

Thanks. And then put a link of this page into your project's website.

The information about "MUSTMAM" are provided by the European Opendata Portal: CORDIS opendata.

More projects from the same programme (H2020-EU.1.3.2.)

CoCoNat (2019)

Coordination in constrained and natural distributed systems

Read More  

PaSION (2018)

A longitudinal assessment of treatment experience, symptoms and potential associations with biomarkers in cancer patients undergoing immune checkpoint inhibitor therapy

Read More  

TLDR (2020)

TL; DR (Too Long; Didn’t Read): Close and hyperreading of literary texts and the modulation of attention

Read More