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REACTION SIGNED

first and euRopEAn siC eigTh Inches pilOt liNe

Total Cost €

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EC-Contrib. €

0

Partnership

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Project "REACTION" data sheet

The following table provides information about the project.

Coordinator
STMICROELECTRONICS SRL 

Organization address
address: VIA C.OLIVETTI 2
city: AGRATE BRIANZA
postcode: 20864
website: www.st.com

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Italy [IT]
 Project website http://www.reaction-ecsel.eu/
 Total cost 49˙767˙672 €
 EC max contribution 10˙401˙952 € (21%)
 Programme 1. H2020-EU.2.1.1.7. (ECSEL)
 Code Call H2020-ECSEL-2017-1-IA-two-stage
 Funding Scheme ECSEL-IA
 Starting year 2018
 Duration (year-month-day) from 2018-11-01   to  2022-04-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    STMICROELECTRONICS SRL IT (AGRATE BRIANZA) coordinator 2˙600˙000.00
2    II-VI GMBH DE (WEITERSTADT) participant 1˙300˙000.00
3    L.P.E. SPA IT (BARANZATE MILANO) participant 1˙250˙000.00
4    CENTROTHERM INTERNATIONAL AG DE (BLAUBEUREN) participant 1˙097˙921.00
5    CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA IT (BOLOGNA) participant 805˙000.00
6    STMICROELECTRONICS SILICON CARBIDE AB SE (NORKOPING) participant 500˙000.00
7    FOR OPTIMAL RENEWABLE ENERGY SYSTEMS SL ES (ZARAGOZA) participant 328˙738.00
8    EVATEC AG CH (TRUBBACH) participant 313˙725.00
9    IKERLAN S. COOP ES (MONDRAGON) participant 304˙500.00
10    APPLIED MATERIALS ISRAEL LTD IL (REHOVOT) participant 239˙250.00
11    HQ-Dielectrics GmbH DE (Dornstadt) participant 185˙840.00
12    DISCO HI-TEC EUROPE GMBH DE (KIRCHHEIM) participant 162˙500.00
13    LAM RESEARCH SRL IT (AGRATE BRIANZA MB) participant 162˙048.00
14    UNIVERSIDAD DE ZARAGOZA ES (ZARAGOZA) participant 152˙436.00
15    MITTUNIVERSITETET SE (SUNDSVALL) participant 140˙000.00
16    SIEC BADAWCZA LUKASIEWICZ - INSTYTUT TECHNOLOGII ELEKTRONOWEJ PL (WARSZAWA) participant 140˙000.00
17    EV GROUP E. THALLNER GMBH AT (ST FLORIAN AM INN) participant 124˙380.00
18    SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE SK (BRATISLAVA) participant 113˙750.00
19    ELFOREST AB SE (ARNASVALL) participant 112˙500.00
20    JSR MICRO NV BE (LEUVEN) participant 95˙259.00
21    NANO DESIGN SRO SK (BRATISLAVA) participant 80˙625.00
22    TERNIENERGIA SPA IT (NARNI) participant 70˙000.00
23    DACPOL SPOLKA Z OGRANICZONA ODPOWIEDZIALNOSCIA PL (PIASECZNO) participant 50˙000.00
24    APPLIED MATERIALS ITALIA SRL IT (SAN BAGIO DI CALLALTA) participant 38˙821.00
25    APPLIED MATERIALS GMBH DE (DRESDEN) participant 34˙656.00
26    APPLIED MATERIALS IRELAND LIMITED IE (MAYNOOTH) participant 0.00
27    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) participant 0.00
28    LAM RESEARCH SAS FR (MEYLAN) participant 0.00
29    UNIVERSITA DEGLI STUDI DI PALERMO IT (PALERMO) participant 0.00
30    UNIVERSITATEA POLITEHNICA DIN BUCURESTI RO (BUCHAREST) participant 0.00

Map

 Project objective

REACTION will push through the first worldwide 200mm Silicon Carbide (SiC) Pilot Line Facility for Power technology. This will enable the European industry to set the world reference of innovative and competitive solutions for critical societal challenges, like Energy saving and CO2 Reduction as well as Sustainable Environment through electric mobility and industrial power efficiency. Establishing the first 200mm SiC Pilot Line in the world and developing the most innovative and cost competitive technology, this project will address mass-market applications like smart energy and smart mobility, and industrial. It will allow to meet the more and more increasing demand of requirements in terms of quality and cost constraint for next decade generation’s power electronics. The Project strength is the complete Pilot Line value chain implementation, integrating and optimizing partnership in the fields of SiC equipment developers, SiC process technologists, RTOs, and end users partners till the final applications context. This will allow to develop a full 8” SiC line ecosystem enhancing the competitiveness of EU- Industries down to the value chain in a market context where other countries today, such as the USA or Japan, are just starting to play on 6” SiC market. Innovative SiC power device Performances improvements, together with cost and size reductions, are the most relevant challenges addressed in the project that are expected to lead to a new stronger European supply chain for very compact SiC converters, from 600V to 3.3kV range, ideal for the addressed applications; the ambition is therefore to play a primary role towards excellence in Europe by a first generations of 8” SiC profitable Smart Mobility and Smart Energy products and components, primary access to IPs for the relevant essential capabilities, competitiveness of manufacturing in Europe.

 Deliverables

List of deliverables.
Mechanical Substrate Hi Quality Substrate Availability Demonstrators, pilots, prototypes 2020-04-11 08:33:54
Project web site Websites, patent fillings, videos etc. 2020-04-11 08:33:54
SiC Power Diodes at 150mm Scale Availability Demonstrators, pilots, prototypes 2020-04-11 08:33:54
Database of Dissemination activities I Documents, reports 2020-04-11 08:33:54
SiC Power Planar MOSFET at 150mm Scale Availability Demonstrators, pilots, prototypes 2020-04-11 08:33:54

Take a look to the deliverables list in detail:  detailed list of REACTION deliverables.

 Publications

year authors and title journal last update
List of publications.
2019 M. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte
Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
published pages: 274-279, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2019.01.019
Materials Science in Semiconductor Processing 93 2020-04-11
2019 Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, Fabrizio Roccaforte
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
published pages: 3468, ISSN: 1996-1944, DOI: 10.3390/ma12213468
Materials 12/21 2020-04-11

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The information about "REACTION" are provided by the European Opendata Portal: CORDIS opendata.

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