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WAKeMeUP SIGNED

Wafers for Automotive and other Key applications using Memories, embedded in Ulsi Processors

Total Cost €

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EC-Contrib. €

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Partnership

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Project "WAKeMeUP" data sheet

The following table provides information about the project.

Coordinator
STMICROELECTRONICS CROLLES 2 SAS 

Organization address
address: RUE JEAN MONNET 850
city: CROLLES
postcode: 38920
website: www.st.com

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Project website http://www.wakemeup-ecsel.eu/
 Total cost 96˙689˙472 €
 EC max contribution 24˙440˙978 € (25%)
 Programme 1. H2020-EU.2.1.1.7. (ECSEL)
 Code Call H2020-ECSEL-2017-1-IA-two-stage
 Funding Scheme ECSEL-IA
 Starting year 2018
 Duration (year-month-day) from 2018-05-01   to  2021-04-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    STMICROELECTRONICS CROLLES 2 SAS FR (CROLLES) coordinator 8˙174˙846.00
2    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) participant 9˙268˙018.00
3    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) participant 1˙101˙130.00
4    STMICROELECTRONICS (GRAND OUEST) SAS FR (LE MANS) participant 1˙065˙236.00
5    STMICROELECTRONICS SA FR (MONTROUGE) participant 742˙817.00
6    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS FR (PARIS) participant 654˙874.00
7    CONTINENTAL TEVES AG & CO. OHG DE (FRANKFURT AM MAIN) participant 544˙250.00
8    STMICROELECTRONICS ROUSSET SAS FR (ROUSSET) participant 542˙405.00
9    STMICROELECTRONICS GRENOBLE 2 SAS FR (GRENOBLE) participant 525˙164.00
10    MELEXIS GMBH DE (ERFURT) participant 343˙250.00
11    TURKIYE BILIMSEL VE TEKNOLOJIK ARASTIRMA KURUMU TR (ANKARA) participant 295˙531.00
12    TECHNISCHE UNIVERSITAT DARMSTADT DE (DARMSTADT) participant 238˙551.00
13    X-FAB Dresden GmbH & Co. KG DE (DRESDEN) participant 212˙373.00
14    UNIVERSIDAD AUTONOMA DE BARCELONA ES (CERDANYOLA DEL VALLES) participant 211˙494.00
15    THALES DIS FRANCE SA FR (MEUDON) participant 210˙124.00
16    PFEIFFER VACUUM FR (ANNECY) participant 144˙065.00
17    USTAV TEORIE INFORMACE A AUTOMATIZACE AV CR VVI CZ (PRAHA 8) participant 112˙000.00
18    INSTITUT MIKROELEKTRONICKYCH APLIKACI S.R.O. CZ (PRAHA 5 - SMICHOV) participant 54˙843.00

Map

 Project objective

The WAKEMEUP project objective is to set-up a pilot line for advanced microcontrollers with embedded non-volatile memory, design and manufacturing for the prototyping of innovative applications for the smart mobility and smart society domains. The already defined microcontrollers with 40nm embedded flash technology will be consolidated to build a solid manufacturing platform. Additional developments will be performed for the integration of memory, power management, connectivity, hard security on the same chip. The project will also target the industrialization of the embedded Phase Change Memory (PCM) technology built on top of the FDSOI 28nm logic process pilot line. The development of the ePCM will be driven by the final application requirements as well as decreasing the power consumption. The alternative memory solutions will be also studied as they have different - and complementary - traits in such areas as read/write speed, power and energy consumption, retention and endurance, and device density and benchmarked with the ePCM and the conventional eFlash. Continued advances in materials, device physics, architectures and design could further reduce the energy consumption of these memories. To achieve this goal of generating high value added semiconductor circuits in Europe in a breakthrough leading edge technology the project will deploy all the necessary activities to bring a new technology to an early industrial maturity stage. These activities encompass such developments as: technology enhancements for various specific application requirements such as wide temperature range and reliability, high security requests, high flexibility…, design enablment allowing first time silicon success, prototyping demonstrator products in the different application areas. In the WAKEMEUP project, new devices and systems will be developed by the application partners in automotive and secure based on FD-SOI and embedded digital technology to answer specific applications needs.

 Publications

year authors and title journal last update
List of publications.
2019 Stefan Petzold, S. U. Sharath, Jonas Lemke, Erwin Hildebrandt, Christina Trautmann, Lambert Alff
Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory
published pages: 1715-1718, ISSN: 0018-9499, DOI: 10.1109/tns.2019.2908637
IEEE Transactions on Nuclear Science 66/7 2020-04-25
2019 Marta Pedró, Javier Martín-Martínez, Marcos Maestro-Izquierdo, Rosana Rodríguez, Montserrat Nafría
Self-Organizing Neural Networks Based on OxRAM Devices under a Fully Unsupervised Training Scheme
published pages: 3482, ISSN: 1996-1944, DOI: 10.3390/ma12213482
Materials 12/21 2020-04-25
2019 Agustín Cisternas Ferri, Alan Rapoport, Pablo I. Fierens, German A. Patterson, Enrique Miranda, Jordi Suñé
On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits
published pages: 2260, ISSN: 1996-1944, DOI: 10.3390/ma12142260
Materials 12/14 2020-04-25
2019 Stefan Petzold, Eszter Piros, S U Sharath, Alexander Zintler, Erwin Hildebrandt, Leopoldo Molina-Luna, Christian Wenger, Lambert Alff
Gradual reset and set characteristics in yttrium oxide based resistive random access memory
published pages: 75008, ISSN: 0268-1242, DOI: 10.1088/1361-6641/ab220f
Semiconductor Science and Technology 34/7 2020-04-25
2018 A. Rodriguez-Fernandez, C. Cagli, J. Sune, E. Miranda
Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO 2 -Based ReRAM Devices
published pages: 656-659, ISSN: 0741-3106, DOI: 10.1109/led.2018.2822047
IEEE Electron Device Letters 39/5 2020-04-25
2019 Andrea N. D. Kolb, Nicolas Bernier, Eric Robin, Anass Benayad, Jean-Luc Rouvière, Chiara Sabbione, Françoise Hippert, Pierre Noé
Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application
published pages: 701-710, ISSN: 2637-6113, DOI: 10.1021/acsaelm.9b00070
ACS Applied Electronic Materials 1/5 2020-04-25
2018 Philippe Kowalczyk, Françoise Hippert, Nicolas Bernier, Cristian Mocuta, Chiara Sabbione, Walter Batista-Pessoa, Pierre Noé
Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb 2 Te 3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices
published pages: 1704514, ISSN: 1613-6810, DOI: 10.1002/smll.201704514
Small 14/24 2020-04-25
2019 Alexandre Levisse, Pierre-Emmanuel Gaillardon, Bastien Giraud, Ian O\'Connor, Jean-Philippe Noel, Mathieu Moreau, Jean-Michel Portal
Resistive Switching Memory Architecture Based on Polarity Controllable Selectors
published pages: 183-194, ISSN: 1536-125X, DOI: 10.1109/tnano.2018.2887140
IEEE Transactions on Nanotechnology 18 2020-04-25
2019 Gilbert Sassine, Cécile Nail, Philippe Blaise, Benoit Sklenard, Mathieu Bernard, Rémy Gassilloud, Aurélie Marty, Marc Veillerot, Christophe Vallée, Etienne Nowak, Gabriel Molas
Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions
published pages: 1800658, ISSN: 2199-160X, DOI: 10.1002/aelm.201800658
Advanced Electronic Materials 5/2 2020-04-25
2018 A. Rodriguez-Fernandez, C. Cagli, L. Perniola, E. Miranda, J. Suñé
Characterization of HfO 2 -based devices with indication of second order memristor effects
published pages: 101-106, ISSN: 0167-9317, DOI: 10.1016/j.mee.2018.04.006
Microelectronic Engineering 195 2020-04-25
2018 Gilbert Sassine, Carlo Cagli, Jean-Francois Nodin, Gabriel Molas, Etienne Nowak
Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO 2 Based RRAM Arrays
published pages: 696-702, ISSN: 2168-6734, DOI: 10.1109/JEDS.2018.2830999
IEEE Journal of the Electron Devices Society 6 2020-04-25
2018 Corentin Pigot, Marc Bocquet, Fabien Gilibert, Marina Reyboz, Olga Cueto, Vincenzo Della Marca, Paola Zuliani, Jean-Michel Portal
Comprehensive Phase-Change Memory Compact Model for Circuit Simulation
published pages: 4282-4289, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2862155
IEEE Transactions on Electron Devices 65/10 2020-04-25
2018 A. Rodriguez-Fernandez, J. Muñoz-Gorriz, J. Suñé, E. Miranda
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory
published pages: 142-146, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2018.06.120
Microelectronics Reliability 88-90 2020-04-25
2018 Gabriel Molas, Gilbert Sassine, Cecile Nail, Diego Alfaro Robayo, Jean-François Nodin, Carlo Cagli, Jean Coignus, Philippe Blaise, Etienne Nowak
(Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions
published pages: 35-47, ISSN: 1938-5862, DOI: 10.1149/08603.0035ecst
ECS Transactions 86/3 2020-04-25

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