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IQubits SIGNED

Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Total Cost €

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EC-Contrib. €

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Partnership

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 IQubits project word cloud

Explore the words cloud of the IQubits project. It provides you a very rough idea of what is the project "IQubits" about.

qubit    readout    larger    quantum    energy    mm    wafer    coupled    magnitude    times    fabricated    fundamental    experimental    25    operation    scaling    20ps    fabrication    filtering    half    blocks    fdsoi    technologies    ultimately    si    wave    240ghz    energies    largely    nitrides    scalability    building    die    mev    dimensions    10nm    electron    consist    hole    pulses    fast    temperature    verify    dot    tuned    frequencies    300k    12    sige    suitable    thermal    ics    structures    corresponding    coupling    silicon    experiments    splitting    mosfets    mode    interdisciplinary    hold    experimentally    spin    kelvin    atomic    ratio    soi    insulator    circuits    orders    radical    atomistic    scaled    decoherence    computing    prove    designed    cmos    commercial    placed    gating    prospect    iqubits    wideband    22nm    gate    qubits    2nm    bandgap    degrees    pitch    depleted    breakthrough    simulations    channel    plan    grown    latter    foundry    filter    noise    compatible    nitride    aggressively   

Project "IQubits" data sheet

The following table provides information about the project.

Coordinator
AARHUS UNIVERSITET 

Organization address
address: NORDRE RINGGADE 1
city: AARHUS C
postcode: 8000
website: www.au.dk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Denmark [DK]
 Total cost 3˙324˙330 €
 EC max contribution 2˙688˙375 € (81%)
 Programme 1. H2020-EU.1.2.1. (FET Open)
 Code Call H2020-FETOPEN-2018-2019-2020-01
 Funding Scheme RIA
 Starting year 2019
 Duration (year-month-day) from 2019-01-01   to  2023-04-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    AARHUS UNIVERSITET DK (AARHUS C) coordinator 788˙625.00
2    IDRYMA TECHNOLOGIAS KAI EREVNAS EL (IRAKLEIO) participant 700˙000.00
3    INSTITUTUL NATIONAL DE CERCETAREDEZVOLTARE PENTRU MICROTEHNOLOGIE RO (VOLUNTARI) participant 498˙250.00
4    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) participant 400˙000.00
5    APPLIED MATERIALS ITALIA SRL IT (SAN BAGIO DI CALLALTA) participant 301˙500.00
6    MDLAB SRL IT (REGGIO EMILIA) participant 0.00
7    THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO CA (TORONTO) participant 0.00

Map

 Project objective

The objectives of the interdisciplinary project IQubits are to (i) develop and demonstrate experimentally high-temperature (high-T) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm Fully-Depleted Silicon-on-Insulator (FDSOI) CMOS foundry technology as the enabling fundamental building blocks of quantum computing technologies, (ii) verify the scalability of these qubits to 10nm dimensions through fabrication experiments and (iii) prove through atomistic simulations that, at 2nm dimensions, they are suitable for 300K operation. The proposed 22nm FDSOI qubit ICs consist of coupled quantum-dot electron and hole spin qubits, placed in the atomic-scale channel of multi-gate n- and p-MOSFETs, and of 60-240GHz spin control/readout circuits integrated on the same die in state-of-the-art FDSOI CMOS foundry technology. To assess the impact of future CMOS scaling, more aggressively scaled Si-channel SOI and nitride-channel qubit structures will also be designed and fabricated in two experimental processes with 10nm gate half pitch. The latter will be developed in this project. The plan is for the III-nitrides (III-N) qubits to be ultimately grown on a SOI wafer, to be compatible with CMOS. Because of their larger bandgap, III-N hold a better prospect than Si and SiGe for qubits with larger coupling energy and mode energy splitting, and 300K operation. As a radical breakthrough, the fabricated qubits will feature coupling energies on the order of 0.25-1 meV corresponding to control frequencies in the 60-240GHz range, suitable for operation at 3–12 degrees Kelvin, two orders of magnitude higher than today's qubits. The tuned mm-wave circuits allow for 10-20ps spin control pulses which help to filter out wideband thermal noise and largely enhance the ratio between the gating and the decoherence times. Thermal noise filtering and fast control of the spin may lead to even higher temperature operation for a given energy-level splitting.

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The information about "IQUBITS" are provided by the European Opendata Portal: CORDIS opendata.

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