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IQubits SIGNED

Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Total Cost €

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EC-Contrib. €

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Partnership

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 IQubits project word cloud

Explore the words cloud of the IQubits project. It provides you a very rough idea of what is the project "IQubits" about.

atomic    cmos    fdsoi    10nm    foundry    experiments    designed    kelvin    quantum    pulses    pitch    filtering    insulator    tuned    readout    atomistic    larger    electron    experimentally    22nm    mm    circuits    silicon    hole    frequencies    prospect    times    temperature    gating    largely    suitable    depleted    wave    splitting    grown    noise    energies    degrees    operation    magnitude    plan    fabricated    gate    scalability    dot    fundamental    wideband    consist    300k    nitrides    channel    mev    nitride    blocks    coupled    compatible    sige    mosfets    wafer    20ps    decoherence    building    iqubits    half    experimental    prove    2nm    ultimately    placed    interdisciplinary    filter    energy    latter    ratio    scaling    computing    mode    structures    fabrication    qubits    corresponding    aggressively    coupling    soi    dimensions    hold    die    radical    commercial    qubit    fast    25    breakthrough    technologies    orders    bandgap    si    spin    simulations    ics    240ghz    12    scaled    thermal    verify   

Project "IQubits" data sheet

The following table provides information about the project.

Coordinator
AARHUS UNIVERSITET 

Organization address
address: NORDRE RINGGADE 1
city: AARHUS C
postcode: 8000
website: www.au.dk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Denmark [DK]
 Total cost 3˙324˙330 €
 EC max contribution 2˙688˙375 € (81%)
 Programme 1. H2020-EU.1.2.1. (FET Open)
 Code Call H2020-FETOPEN-2018-2019-2020-01
 Funding Scheme RIA
 Starting year 2019
 Duration (year-month-day) from 2019-01-01   to  2023-04-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    AARHUS UNIVERSITET DK (AARHUS C) coordinator 788˙625.00
2    IDRYMA TECHNOLOGIAS KAI EREVNAS EL (IRAKLEIO) participant 700˙000.00
3    INSTITUTUL NATIONAL DE CERCETAREDEZVOLTARE PENTRU MICROTEHNOLOGIE RO (VOLUNTARI) participant 498˙250.00
4    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) participant 400˙000.00
5    APPLIED MATERIALS ITALIA SRL IT (SAN BAGIO DI CALLALTA) participant 301˙500.00
6    MDLAB SRL IT (REGGIO EMILIA) participant 0.00
7    THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO CA (TORONTO) participant 0.00

Map

 Project objective

The objectives of the interdisciplinary project IQubits are to (i) develop and demonstrate experimentally high-temperature (high-T) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm Fully-Depleted Silicon-on-Insulator (FDSOI) CMOS foundry technology as the enabling fundamental building blocks of quantum computing technologies, (ii) verify the scalability of these qubits to 10nm dimensions through fabrication experiments and (iii) prove through atomistic simulations that, at 2nm dimensions, they are suitable for 300K operation. The proposed 22nm FDSOI qubit ICs consist of coupled quantum-dot electron and hole spin qubits, placed in the atomic-scale channel of multi-gate n- and p-MOSFETs, and of 60-240GHz spin control/readout circuits integrated on the same die in state-of-the-art FDSOI CMOS foundry technology. To assess the impact of future CMOS scaling, more aggressively scaled Si-channel SOI and nitride-channel qubit structures will also be designed and fabricated in two experimental processes with 10nm gate half pitch. The latter will be developed in this project. The plan is for the III-nitrides (III-N) qubits to be ultimately grown on a SOI wafer, to be compatible with CMOS. Because of their larger bandgap, III-N hold a better prospect than Si and SiGe for qubits with larger coupling energy and mode energy splitting, and 300K operation. As a radical breakthrough, the fabricated qubits will feature coupling energies on the order of 0.25-1 meV corresponding to control frequencies in the 60-240GHz range, suitable for operation at 3–12 degrees Kelvin, two orders of magnitude higher than today's qubits. The tuned mm-wave circuits allow for 10-20ps spin control pulses which help to filter out wideband thermal noise and largely enhance the ratio between the gating and the decoherence times. Thermal noise filtering and fast control of the spin may lead to even higher temperature operation for a given energy-level splitting.

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The information about "IQUBITS" are provided by the European Opendata Portal: CORDIS opendata.

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