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GLISS SIGNED

Gliding epitaxy for inorganic space-power sheets

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 GLISS project word cloud

Explore the words cloud of the GLISS project. It provides you a very rough idea of what is the project "GLISS" about.

underlying    sustainable    efficiency    generation    services    innovation    wafer    structure    crystal    nucleates    translational    drive    prospect    engineering    layer    restrictions    exhibits    equilibrium    tolerance    epitaxial    surface    ultra    coverglass    demonstrated    modern    provides    bonding    carriers    rates    hot    interaction    nm    protective    structures    realizing    architecture    lightweight    epitaxially    unlimited    film    release    panels    rigid    photovoltaic    lt    afforded    operation    deposited    power    despite    satellite    economically    substrates    efficient    interface    thick    suggesting    fabrication    grown    thin    2d    geometry    scalable    device    form    steady    nanophotonic    current    mechanical    expensive    registry    provision    heavy    energy    electronic    reuse    pv    launch    radiation    films    monolayers    extraction    global    designed    rebalance    accelerate    enhancement    free    fundamental    multijunction    limited    intrinsic    pristine    glide    removing    decreased    carrier    damage    selective    universal    prevent    technologies    substrate    flexible    ranging   

Project "GLISS" data sheet

The following table provides information about the project.

Coordinator
THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE 

Organization address
address: TRINITY LANE THE OLD SCHOOLS
city: CAMBRIDGE
postcode: CB2 1TN
website: www.cam.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 1˙797˙789 €
 EC max contribution 1˙797˙789 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2019-STG
 Funding Scheme ERC-STG
 Starting year 2020
 Duration (year-month-day) from 2020-01-01   to  2024-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) coordinator 1˙797˙789.00

Map

 Project objective

Current satellite technologies are limited by the photovoltaic (PV) panels they require for power generation. Despite steady advances in efficiency afforded by modern III-V multijunction PV, these large, rigid panels are expensive to produce and launch due to their heavy on-wafer architecture and thick protective coverglass, which is necessary to prevent radiation damage. I will develop and demonstrate ultra-thin (<100 nm) III-V PV, for highly efficient, lightweight, and flexible satellite PV provision. Decreased costs will help accelerate universal availability of satellite services, essential for sustainable global development, and removing PV form factor restrictions will drive innovation in satellite design.

Realizing this goal will require a translational program of research, ranging from fundamental design parameters to scalable fabrication methodologies. I recently demonstrated that the ultra-thin form factor exhibits intrinsic radiation tolerance, suggesting the prospect of a coverglass free, flexible system. I will target high efficiency in this geometry by engineering the device architecture to rebalance carrier interaction rates to support generation of non-equilibrium hot-carriers through the use of nanophotonic structures for strong E-field enhancement. The electronic structure will be designed for energy selective hot-carrier extraction, allowing highly efficient operation. Scalable fabrication will be achieved via development of a novel crystal growth method, in which III-V films are grown epitaxially on 2D monolayers. The 2D interface will prevent strong bonding between the deposited layer and an underlying growth substrate, which provides registry information to the crystal as it nucleates. The epitaxial layer will be free to glide across the growth surface during film formation, allowing the mechanical release of pristine films and the unlimited reuse of the growth substrates, enabling scalable, economically viable production of this new device.

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The information about "GLISS" are provided by the European Opendata Portal: CORDIS opendata.

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