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ULKCOND SIGNED

Zero damage Ultra-Low-K etch using the precursor CONDensation technique

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 ULKCOND project word cloud

Explore the words cloud of the ULKCOND project. It provides you a very rough idea of what is the project "ULKCOND" about.

nm    50    named    insulating    al    scaling    deposited    semiconductor    accordingly    sio2    technique    zero    transmission    law    condensation    size    60    5nm    polishing    locally    lower    delayed    consequence    deg    economic    lowered    career    signal    delay    conductor       etching    optimizing    interconnects    organo    dielectric    ultimately    nanotechnology    patterned    intrinsic    cryogenic    applies    improvement    stops    profile    since    reactions    skills    micro    node    damaging    decrease    followed    never    cmos    resistivity    amongst    industry    circuit    replaced    plasma    damage    temperature    excess    bulk    evolution    porosity    first    silicate    structure    metal    besides    compatible    deposition       phenomenon    damascene    glasses    cu    porous    electronic    materials    rc    pore    etched    causing    transistor    moore    successful    capacitance    capillary    dielectrics    extend    beginning    manufacturing    nowadays    away    explored    electronics    removal    domains    permittivity   

Project "ULKCOND" data sheet

The following table provides information about the project.

Coordinator
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM 

Organization address
address: KAPELDREEF 75
city: LEUVEN
postcode: 3001
website: www.imec.be

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Belgium [BE]
 Total cost 160˙800 €
 EC max contribution 160˙800 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2015
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2016
 Duration (year-month-day) from 2016-04-01   to  2018-03-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM BE (LEUVEN) coordinator 160˙800.00

Map

 Project objective

Since the beginning of the electronic evolution, size of transistor never stops to decrease accordingly to Moore’s law. This scaling applies also to the interconnects, composed by conductor and insulating materials, leading to an overall increase of the resistivity of the conductor and the dielectric’s capacitance, ultimately causing delayed signal transmission (so-called RC delay). In order to decrease the resistivity, Al was replaced by Cu as a conductor. The circuit’s capacitance can be lowered by using materials with lower dielectric permittivity, named low-k’s. Nowadays, the most successful low-k dielectrics are porous organo-silicate glasses, with porosity up to 50%, pore size around 1.5-2 nm and k-values down to 1.8 (k=4.2 for bulk SiO2). Interconnects are nowadays built by the Damascene technique, where the dielectric is first deposited, then locally etched away, followed by metal deposition in the patterned structure and polishing for metal excess removal. Due to their intrinsic porosity, most of processing steps cause low-k damage, amongst which plasma etching is the most damaging. The present proposal aims at understanding and optimizing zero-damage cryogenic etching of low-k materials, compatible with the micro-electronics industry (at temperature above -60°C). Besides the improvement of the etching process and the better understanding of reactions damaging the low-k materials during plasma etching, this work will investigate the phenomenon of micro-capillary condensation into porous materials, which is not widely explored and can lead to other applications in micro-electronics and in other nanotechnology domains. This research project will contribute to enable the so-called 5nm node in future CMOS manufacturing, and as a consequence it will have a wide economic impact. Finally, this research will allow the applicant to extend his technical and project management skills, strengthening his profile for a future career in the semiconductor industry or R&D.

 Publications

year authors and title journal last update
List of publications.
2016 F.Leroy, N. Brochu, R. Chanson, R.Dussart, T. Tillocher, J.‑F. de Marneffe, L Zhang, K. Maekawa, K. Yatsuda, S. Tahara, C. Dussarrat
Comparison of C4F8 and Higher boiling point organic for low-k cryo-etching
published pages: , ISSN: , DOI:
2019-06-13
2017 R. Chanson, J.F. de Marneffe, K. Babaei Gavan, F. Lazzarino, T. Yamaguchi, K. Yatsuda
Option for low damage processing during FSAV : GPPS and alternative plug
published pages: , ISSN: , DOI:
2019-06-13
2017 R. CHANSON, S. Tahara, K. Sasa, C. Dussarrat, R. Dussart, T. Tillocher, P. Lefaucheux, J-F de marneffe
Low-k cryo-etching : Comparison of four different High Boiling Point Organic (HBPO)
published pages: , ISSN: , DOI:
2019-06-13
2017 R. Chanson, N. Holtzer, P. Lefaucheux, R. Dussart, P. Shen, K. Urabe, C. Dussarat, K. Maekawa, K. Yatsuda, S. Tahara and J.-F. de Marneffe
Low damage ULK etching by means of high boiling point organic condensation
published pages: , ISSN: , DOI:
2019-06-13
2016 R. Chanson, J-F. De Marneffe, R. Dussart, T. Thomas, L. Philippe
Cryo-etching for low-k integration : Phenomenon screening from condensation to damages propagation a 0 damage process is reached
published pages: , ISSN: , DOI:
2019-06-13
2017 Romain Chanson, Philippe Lefaucheux, Remi Dussart, Tillocher Thomas, Peng Shen, Keiichiro Urabe, Christian Dussarat, Kaoru Maekawa, Koichi Yatsuda, Shigeru Tahara, Jean-Francois de Marneffe
Cryo-etching for integration in micro-electronic : Silicon deep etch for contact and low-k integration in Back end of line (BEOL)
published pages: , ISSN: , DOI:
2019-06-13
2017 R. CHANSON, S. Tahara, K. Sasa, C. Dussarat, R. Dussart, T. Thillocher, P. Lefaucheux, J-F demarneff
Cryo-etching: fundamental mechanisms
published pages: , ISSN: , DOI:
2019-06-13

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