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ULKCOND SIGNED

Zero damage Ultra-Low-K etch using the precursor CONDensation technique

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 ULKCOND project word cloud

Explore the words cloud of the ULKCOND project. It provides you a very rough idea of what is the project "ULKCOND" about.

applies    metal    porosity    besides    electronics    beginning    insulating    explored    nanotechnology    60    polishing    micro    manufacturing    interconnects    zero    accordingly    size    locally    intrinsic    lower    al    first    conductor    damaging    followed    silicate    electronic    ultimately    causing    porous    condensation    5nm    away    transmission    industry    cu    lowered    cryogenic    law    glasses    dielectrics    materials    transistor    consequence    delay    career    delayed    nowadays    50    removal    patterned    sio2    signal    compatible    damage    reactions    never    node    excess    permittivity    economic    plasma    temperature    cmos    stops    replaced    decrease    organo    amongst    profile    technique    deposition    capacitance    since    pore       deg    scaling    evolution    semiconductor    nm    rc    etched    phenomenon    optimizing    etching    bulk    damascene    named    dielectric       circuit    improvement    moore    extend    resistivity    capillary    structure    skills    successful    deposited    domains   

Project "ULKCOND" data sheet

The following table provides information about the project.

Coordinator
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM 

Organization address
address: KAPELDREEF 75
city: LEUVEN
postcode: 3001
website: www.imec.be

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Belgium [BE]
 Total cost 160˙800 €
 EC max contribution 160˙800 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2015
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2016
 Duration (year-month-day) from 2016-04-01   to  2018-03-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM BE (LEUVEN) coordinator 160˙800.00

Map

 Project objective

Since the beginning of the electronic evolution, size of transistor never stops to decrease accordingly to Moore’s law. This scaling applies also to the interconnects, composed by conductor and insulating materials, leading to an overall increase of the resistivity of the conductor and the dielectric’s capacitance, ultimately causing delayed signal transmission (so-called RC delay). In order to decrease the resistivity, Al was replaced by Cu as a conductor. The circuit’s capacitance can be lowered by using materials with lower dielectric permittivity, named low-k’s. Nowadays, the most successful low-k dielectrics are porous organo-silicate glasses, with porosity up to 50%, pore size around 1.5-2 nm and k-values down to 1.8 (k=4.2 for bulk SiO2). Interconnects are nowadays built by the Damascene technique, where the dielectric is first deposited, then locally etched away, followed by metal deposition in the patterned structure and polishing for metal excess removal. Due to their intrinsic porosity, most of processing steps cause low-k damage, amongst which plasma etching is the most damaging. The present proposal aims at understanding and optimizing zero-damage cryogenic etching of low-k materials, compatible with the micro-electronics industry (at temperature above -60°C). Besides the improvement of the etching process and the better understanding of reactions damaging the low-k materials during plasma etching, this work will investigate the phenomenon of micro-capillary condensation into porous materials, which is not widely explored and can lead to other applications in micro-electronics and in other nanotechnology domains. This research project will contribute to enable the so-called 5nm node in future CMOS manufacturing, and as a consequence it will have a wide economic impact. Finally, this research will allow the applicant to extend his technical and project management skills, strengthening his profile for a future career in the semiconductor industry or R&D.

 Publications

year authors and title journal last update
List of publications.
2016 F.Leroy, N. Brochu, R. Chanson, R.Dussart, T. Tillocher, J.‑F. de Marneffe, L Zhang, K. Maekawa, K. Yatsuda, S. Tahara, C. Dussarrat
Comparison of C4F8 and Higher boiling point organic for low-k cryo-etching
published pages: , ISSN: , DOI:
2019-06-13
2017 R. Chanson, J.F. de Marneffe, K. Babaei Gavan, F. Lazzarino, T. Yamaguchi, K. Yatsuda
Option for low damage processing during FSAV : GPPS and alternative plug
published pages: , ISSN: , DOI:
2019-06-13
2017 R. CHANSON, S. Tahara, K. Sasa, C. Dussarrat, R. Dussart, T. Tillocher, P. Lefaucheux, J-F de marneffe
Low-k cryo-etching : Comparison of four different High Boiling Point Organic (HBPO)
published pages: , ISSN: , DOI:
2019-06-13
2017 R. Chanson, N. Holtzer, P. Lefaucheux, R. Dussart, P. Shen, K. Urabe, C. Dussarat, K. Maekawa, K. Yatsuda, S. Tahara and J.-F. de Marneffe
Low damage ULK etching by means of high boiling point organic condensation
published pages: , ISSN: , DOI:
2019-06-13
2016 R. Chanson, J-F. De Marneffe, R. Dussart, T. Thomas, L. Philippe
Cryo-etching for low-k integration : Phenomenon screening from condensation to damages propagation a 0 damage process is reached
published pages: , ISSN: , DOI:
2019-06-13
2017 Romain Chanson, Philippe Lefaucheux, Remi Dussart, Tillocher Thomas, Peng Shen, Keiichiro Urabe, Christian Dussarat, Kaoru Maekawa, Koichi Yatsuda, Shigeru Tahara, Jean-Francois de Marneffe
Cryo-etching for integration in micro-electronic : Silicon deep etch for contact and low-k integration in Back end of line (BEOL)
published pages: , ISSN: , DOI:
2019-06-13
2017 R. CHANSON, S. Tahara, K. Sasa, C. Dussarat, R. Dussart, T. Thillocher, P. Lefaucheux, J-F demarneff
Cryo-etching: fundamental mechanisms
published pages: , ISSN: , DOI:
2019-06-13

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