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ULKCOND SIGNED

Zero damage Ultra-Low-K etch using the precursor CONDensation technique

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 ULKCOND project word cloud

Explore the words cloud of the ULKCOND project. It provides you a very rough idea of what is the project "ULKCOND" about.

nowadays    polishing    locally    phenomenon    transistor    amongst    decrease    temperature    law    besides    intrinsic    delay    al    permittivity    electronic    damage    dielectrics    circuit    electronics    extend    moore    50    nm    5nm    excess    etched    damascene    delayed    applies    insulating    improvement    consequence    bulk    industry    dielectric    domains    cryogenic    replaced    condensation    deposition    signal    porosity    cmos    nanotechnology    materials    organo    explored    resistivity    structure    manufacturing    reactions    stops    beginning    semiconductor    capillary    accordingly    60    optimizing    silicate    micro    away    removal    porous    causing    size    capacitance    interconnects    since    deposited    conductor    scaling    rc    compatible    node    pore    profile    career    metal    named    successful    etching    economic    ultimately    followed    glasses    deg    first    evolution    patterned    zero    lowered    skills    cu    never    lower    plasma    transmission    damaging    sio2    technique         

Project "ULKCOND" data sheet

The following table provides information about the project.

Coordinator
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM 

Organization address
address: KAPELDREEF 75
city: LEUVEN
postcode: 3001
website: www.imec.be

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Belgium [BE]
 Total cost 160˙800 €
 EC max contribution 160˙800 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2015
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2016
 Duration (year-month-day) from 2016-04-01   to  2018-03-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM BE (LEUVEN) coordinator 160˙800.00

Map

 Project objective

Since the beginning of the electronic evolution, size of transistor never stops to decrease accordingly to Moore’s law. This scaling applies also to the interconnects, composed by conductor and insulating materials, leading to an overall increase of the resistivity of the conductor and the dielectric’s capacitance, ultimately causing delayed signal transmission (so-called RC delay). In order to decrease the resistivity, Al was replaced by Cu as a conductor. The circuit’s capacitance can be lowered by using materials with lower dielectric permittivity, named low-k’s. Nowadays, the most successful low-k dielectrics are porous organo-silicate glasses, with porosity up to 50%, pore size around 1.5-2 nm and k-values down to 1.8 (k=4.2 for bulk SiO2). Interconnects are nowadays built by the Damascene technique, where the dielectric is first deposited, then locally etched away, followed by metal deposition in the patterned structure and polishing for metal excess removal. Due to their intrinsic porosity, most of processing steps cause low-k damage, amongst which plasma etching is the most damaging. The present proposal aims at understanding and optimizing zero-damage cryogenic etching of low-k materials, compatible with the micro-electronics industry (at temperature above -60°C). Besides the improvement of the etching process and the better understanding of reactions damaging the low-k materials during plasma etching, this work will investigate the phenomenon of micro-capillary condensation into porous materials, which is not widely explored and can lead to other applications in micro-electronics and in other nanotechnology domains. This research project will contribute to enable the so-called 5nm node in future CMOS manufacturing, and as a consequence it will have a wide economic impact. Finally, this research will allow the applicant to extend his technical and project management skills, strengthening his profile for a future career in the semiconductor industry or R&D.

 Publications

year authors and title journal last update
List of publications.
2016 F.Leroy, N. Brochu, R. Chanson, R.Dussart, T. Tillocher, J.‑F. de Marneffe, L Zhang, K. Maekawa, K. Yatsuda, S. Tahara, C. Dussarrat
Comparison of C4F8 and Higher boiling point organic for low-k cryo-etching
published pages: , ISSN: , DOI:
2019-06-13
2017 R. Chanson, J.F. de Marneffe, K. Babaei Gavan, F. Lazzarino, T. Yamaguchi, K. Yatsuda
Option for low damage processing during FSAV : GPPS and alternative plug
published pages: , ISSN: , DOI:
2019-06-13
2017 R. CHANSON, S. Tahara, K. Sasa, C. Dussarrat, R. Dussart, T. Tillocher, P. Lefaucheux, J-F de marneffe
Low-k cryo-etching : Comparison of four different High Boiling Point Organic (HBPO)
published pages: , ISSN: , DOI:
2019-06-13
2017 R. Chanson, N. Holtzer, P. Lefaucheux, R. Dussart, P. Shen, K. Urabe, C. Dussarat, K. Maekawa, K. Yatsuda, S. Tahara and J.-F. de Marneffe
Low damage ULK etching by means of high boiling point organic condensation
published pages: , ISSN: , DOI:
2019-06-13
2016 R. Chanson, J-F. De Marneffe, R. Dussart, T. Thomas, L. Philippe
Cryo-etching for low-k integration : Phenomenon screening from condensation to damages propagation a 0 damage process is reached
published pages: , ISSN: , DOI:
2019-06-13
2017 Romain Chanson, Philippe Lefaucheux, Remi Dussart, Tillocher Thomas, Peng Shen, Keiichiro Urabe, Christian Dussarat, Kaoru Maekawa, Koichi Yatsuda, Shigeru Tahara, Jean-Francois de Marneffe
Cryo-etching for integration in micro-electronic : Silicon deep etch for contact and low-k integration in Back end of line (BEOL)
published pages: , ISSN: , DOI:
2019-06-13
2017 R. CHANSON, S. Tahara, K. Sasa, C. Dussarat, R. Dussart, T. Thillocher, P. Lefaucheux, J-F demarneff
Cryo-etching: fundamental mechanisms
published pages: , ISSN: , DOI:
2019-06-13

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