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COLIBRI TERMINATED

Carrier-selective contacts for silicon photovoltaics based on broadband-transparent oxides

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 COLIBRI project word cloud

Explore the words cloud of the COLIBRI project. It provides you a very rough idea of what is the project "COLIBRI" about.

photo    competiveness    30    diffused    electricity    oxide    photovoltaic    carrier    competitiveness    cells    doped    plate    transparent    modules    interface    perovskite    bandgap    scheme    junctions    absorption    efficiencies    contacts    reduce    advantages    layers    surface    nm    away    minimized    29    enhancement    full    passivation    sio2    fabrication    heterojunction    25    flat    regular    device    intensive    decades    tco    band    coupling    toxicity    alignment    optimum    contacting    lifetime    devoid    parasitic    consist    patterning    voltages    light    pn    sources    gt    profitability    conductive    currents    theoretical    efficiency    performance    metal    broadband    si    maximum    energy    crystalline    structure    abundance    thick    technique    chemical    selective    junction    direct    layer    transport    optimized    eliminates    tandem    innovative    external    moving    contact    thereby    paradigm    solar    sun    optically    generate    optical    circuit    arising    cell    passivating    mechanisms    tunnelling   

Project "COLIBRI" data sheet

The following table provides information about the project.

Coordinator
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE 

Organization address
address: BATIMENT CE 3316 STATION 1
city: LAUSANNE
postcode: 1015
website: www.epfl.ch

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Switzerland [CH]
 Project website https://www.openaire.eu/search/project
 Total cost 175˙419 €
 EC max contribution 175˙419 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2015
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2016
 Duration (year-month-day) from 2016-06-01   to  2018-05-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE CH (LAUSANNE) coordinator 175˙419.00

Map

 Project objective

This project aims at a cost-effective efficiency enhancement of Si solar cells towards their theoretical maximum of about 29% by moving away from the diffused-junction paradigm. This will reduce the energy fabrication costs on the €/kWh level and thereby increase the competiveness and profitability of photovoltaic systems. Crystalline Si (c-Si) solar cells are since decades the most established photovoltaic technology. Their main advantages are long lifetime (>25 years), non-toxicity and the high abundance of Si. However, for full competitiveness with traditional sources of electricity, important new steps need to be taken to increase their performance. An innovative contacting scheme will be developed that eliminates the main loss mechanisms in c-Si solar cells arising from doped pn-junctions and the direct contact of metal with Si. The novel contacts will be broadband optically transparent, generate a highly passivating and carrier-selective interface to Si and will enable solar cells without doped pn-junctions. No cost-intensive patterning technique is required for the device fabrication and parasitic optical absorption, as present in Si heterojunction solar cells, will be minimized. The novel contacts consist of three layers: a 1-2 nm thick tunnelling SiO2 layer for chemical passivation of the Si surface, a wide-bandgap conductive metal oxide layer providing a specific energy band alignment, and a highly conductive transparent oxide (TCO) for carrier transport to external metal contacts and optimum light coupling into the solar cell device. The contacts will be used for the fabrication of Si solar cells which are devoid of doped pn-junctions and achieve both high open-circuit voltages and photo currents. The structure of the photovoltaic device will be optimized for the application in regular 1-sun modules and for both III-V/Si and perovskite/Si tandem cell applications with potential for flat-plate efficiencies well above 30%.

 Publications

year authors and title journal last update
List of publications.
2017 S. Essig, J. Dréon, J. Werner, P. Löper, S. De Wolf, M. Boccard, C. Ballif
MoOx and WOx based hole-selective contacts for wafer-based Si solar cells,
published pages: , ISSN: , DOI:
Proceedings of the 44th IEEE Photovoltaic Specialists Conference (PVSC-44) 2019-06-13
2017 Stephanie Essig, Christophe Allebé, Timothy Remo, John F. Geisz, Myles A. Steiner, Kelsey Horowitz, Loris Barraud, J. Scott Ward, Manuel Schnabel, Antoine Descoeudres, David L. Young, Michael Woodhouse, Matthieu Despeisse, Christophe Ballif & Adele Tamboli
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
published pages: , ISSN: 2058-7546, DOI: 10.1038/nenergy.2017.144
Nature Energy 6, 17144 (2017) 2019-06-13
2017 James Bullock, Hiroki Ota, Hanchen Wang, Zhaoran Xu, Mark Hettick, Di Yan, Christian Samundsett, Yimao Wan, Stephanie Essig, Monica Morales-Masis, Andrés Cuevas, Ali Javey
Microchannel contacting of crystalline silicon solar cells
published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-017-08913-y
Scientific Reports 7/1 2019-06-13
2017 S. Essig, C. Allebé, J. F. Geisz, M. A. Steiner, L. Barraud, J. S. Ward, M. Schnabel, A. Descoeudres, D. L. Young, M. Despeisse, C. Ballif, A. Tamboli
Mechanically Stacked 4-terminal III-V/Si tandem solar cells
published pages: , ISSN: , DOI:
44th IEEE Photovoltaic Specialists Conference (PVSC-44) 2019-06-13

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