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3eFERRO SIGNED

Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Total Cost €

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EC-Contrib. €

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Partnership

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Outcomes and
results

3eFERRO project word cloud

Explore the words cloud of the 3eFERRO project. It provides you a very rough idea of what is the project "3eFERRO" about.

unprecedented memory speed join envm efficiency synthesis experimental limited volatile company market o2 normally introduce reduces capacitors industry alternative manufacturability leader nvms hfo2 full computing memories mcu material characterization cell zr node fast data finer expertise eferam gating optimization lim architecture position grained units iot flexibility transfer semiconductor efficient substantial incompatible progress fets circuits architectures microprocessor team ferroelectric give originating endurance eflash sensor cmos candidate energy scaling source compatibility edge laboratory power logic write innovative highest nvm off spectrum competitive forces dominant truly benchmarking roadmap validation components si feram easily fine materials opportunity integration demonstrators arrays grain perovskite storage calls disruptive smart close hf

Project "3eFERRO" data sheet

The following table provides information about the project.

Coordinator	COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Organization address address: RUE LEBLANC 25 city: PARIS 15 postcode: 75015 website: www.cea.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	France [FR]
Project website	https://www.3eferro.eu
Total cost	3˙989˙571 €
EC max contribution	3˙989˙570 € (100%)
Programme	1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
Code Call	H2020-ICT-2017-1
Funding Scheme	RIA
Starting year	2018
Duration (year-month-day)	from 2018-01-01 to 2021-06-30

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Organization address address: RUE LEBLANC 25 city: PARIS 15 postcode: 75015 website: www.cea.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS 15)	coordinator	1˙462˙493.00
2	NAMLAB GGMBH NAMLAB GGMBH Organization address address: NOTHNITZER STRASSE 64 city: DRESDEN postcode: 1187 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (DRESDEN)	participant	718˙437.00
3	"NATIONAL CENTER FOR SCIENTIFIC RESEARCH ""DEMOKRITOS""" "NATIONAL CENTER FOR SCIENTIFIC RESEARCH ""DEMOKRITOS""" Organization address address: END OF PATRIARCHOU GRIGORIOU E AND 27 NEAPOLEOS STREET city: AGIA PARASKEVI postcode: 15341 website: www.demokritos.gr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	EL (AGIA PARASKEVI)	participant	369˙587.00
4	ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Organization address address: BATIMENT CE 3316 STATION 1 city: LAUSANNE postcode: 1015 website: www.epfl.ch contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	CH (LAUSANNE)	participant	367˙000.00
5	ECOLE CENTRALE DE LYON ECOLE CENTRALE DE LYON Organization address address: AVENUE GUY DE COLLONGUE 36 city: ECULLY postcode: 69134 website: www.ec-lyon.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (ECULLY)	participant	357˙437.00
6	INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR Organization address address: Atomistilor Street 105 bis city: MAGURELE postcode: 77125 website: www.infim.ro contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	RO (MAGURELE)	participant	310˙125.00
7	FORSCHUNGSZENTRUM JULICH GMBH FORSCHUNGSZENTRUM JULICH GMBH Organization address address: WILHELM JOHNEN STRASSE city: JULICH postcode: 52428 website: www.fz-juelich.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (JULICH)	participant	219˙500.00
8	STMICROELECTRONICS CROLLES 2 SAS STMICROELECTRONICS CROLLES 2 SAS Organization address address: RUE JEAN MONNET 850 city: CROLLES postcode: 38920 website: www.st.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (CROLLES)	participant	184˙988.00

Map

Project objective

Edge computing requires highly energy efficient microprocessor units (MCU) with embedded non-volatile memories (eNVM) to process data at the source that is the IoT sensor node. eFLASH technology is limited by low write speed, high power and low endurance. Alternative fast, low power and high endurance eNVM could greatly enhance energy efficiency and allow flexibility for finer grain of logic and memory. FeRAM has the highest endurance of all emerging NVMs. However, perovskite-based eFeRAM is incompatible with Si CMOS, does not easily scale and has manufacturability and cost issues. We introduce new ferroelectric material Hf(Zr)O2 to make FeRAM competitive NVM candidate for IoT. HfO2 compatibility with Si processing will facilitate integration, improve manufacturability and allow better scaling. Different cell architectures based on capacitors or ferroelectric FETs will give unprecedented flexibility for “fine-grained” logic –in-memory (LiM) circuits, which allows data storage close to logic circuits, reduces energy cost of data transfer and allows smart gating for “normally-off” computing. The project is built around four objectives: i) Optimization of Materials, ii) LiM design & architecture, iii) Integration of Hf(Zr)O2-based NVM arrays, iv) Memory test & validation & benchmarking. The work calls on the full spectrum of expertise from advanced materials synthesis and characterization, processing, design and integration and benchmarking to make substantial progress towards a truly disruptive energy efficient memory and logic technology. A team of 8 partners, including a major European semiconductor company, the leader in the field of ferroelectric HfO2 and a large technology laboratory, originating from 5 EU states, will join forces to deliver experimental demonstrators creating the opportunity for the EU industry to establish a dominant position in IoT innovative components market and make an impact on the future roadmap for embedded systems and applications.

Deliverables

List of deliverables.
Dissemination and Exploitation Plan (update 1)	Documents, reports	2020-01-30 10:22:25
Project Website and visual identity	Websites, patent fillings, videos etc.	2020-01-30 10:22:25

Take a look to the deliverables list in detail: detailed list of 3eFERRO deliverables.

Publications

List of publications.
year	authors and title	journal	last update
2019	Terence Mittmann, Monica Materano, Patrick D. Lomenzo, Min Hyuk Park, Igor Stolichnov, Matteo Cavalieri, Chuanzhen Zhou, Chingâ€Chang Chung, Jacob L. Jones, Thomas Szyjka, Martina MÃ¼ller, Alfred Kersch, Thomas Mikolajick, Uwe Schroeder Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering published pages: 1900042, ISSN: 2196-7350, DOI: 10.1002/admi.201900042	Advanced Materials Interfaces	2020-01-30
2019	Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering published pages: 21203, ISSN: 2166-2754, DOI: 10.1116/1.5060643	Journal of Vacuum Science & Technology B 37/2	2020-01-30

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The information about "3EFERRO" are provided by the European Opendata Portal: CORDIS opendata.

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