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3eFERRO SIGNED

Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Total Cost €

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EC-Contrib. €

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Partnership

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 3eFERRO project word cloud

Explore the words cloud of the 3eFERRO project. It provides you a very rough idea of what is the project "3eFERRO" about.

leader    speed    demonstrators    spectrum    eferam    position    optimization    characterization    unprecedented    substantial    compatibility    scaling    storage    computing    join    competitive    node    laboratory    si    hfo2    o2    finer    memories    source    progress    sensor    industry    transfer    nvm    experimental    iot    reduces    off    nvms    innovative    perovskite    dominant    mcu    opportunity    alternative    energy    efficiency    capacitors    close    material    semiconductor    components    grain    circuits    manufacturability    edge    volatile    normally    team    memory    originating    truly    give    smart    validation    disruptive    units    introduce    easily    architectures    materials    envm    integration    fast    feram    fets    company    expertise    power    flexibility    market    endurance    ferroelectric    write    lim    limited    hf    highest    incompatible    microprocessor    data    eflash    zr    arrays    candidate    full    architecture    roadmap    forces    efficient    cmos    cell    calls    synthesis    benchmarking    gating    logic    fine    grained   

Project "3eFERRO" data sheet

The following table provides information about the project.

Coordinator
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 

Organization address
address: RUE LEBLANC 25
city: PARIS 15
postcode: 75015
website: www.cea.fr

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Project website https://www.3eferro.eu
 Total cost 3˙989˙571 €
 EC max contribution 3˙989˙570 € (100%)
 Programme 1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
 Code Call H2020-ICT-2017-1
 Funding Scheme RIA
 Starting year 2018
 Duration (year-month-day) from 2018-01-01   to  2021-06-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) coordinator 1˙462˙493.00
2    NAMLAB GGMBH DE (DRESDEN) participant 718˙437.00
3    "NATIONAL CENTER FOR SCIENTIFIC RESEARCH ""DEMOKRITOS""" EL (AGIA PARASKEVI) participant 369˙587.00
4    ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE CH (LAUSANNE) participant 367˙000.00
5    ECOLE CENTRALE DE LYON FR (ECULLY) participant 357˙437.00
6    INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR RO (MAGURELE) participant 310˙125.00
7    FORSCHUNGSZENTRUM JULICH GMBH DE (JULICH) participant 219˙500.00
8    STMICROELECTRONICS CROLLES 2 SAS FR (CROLLES) participant 184˙988.00

Map

 Project objective

Edge computing requires highly energy efficient microprocessor units (MCU) with embedded non-volatile memories (eNVM) to process data at the source that is the IoT sensor node. eFLASH technology is limited by low write speed, high power and low endurance. Alternative fast, low power and high endurance eNVM could greatly enhance energy efficiency and allow flexibility for finer grain of logic and memory. FeRAM has the highest endurance of all emerging NVMs. However, perovskite-based eFeRAM is incompatible with Si CMOS, does not easily scale and has manufacturability and cost issues. We introduce new ferroelectric material Hf(Zr)O2 to make FeRAM competitive NVM candidate for IoT. HfO2 compatibility with Si processing will facilitate integration, improve manufacturability and allow better scaling. Different cell architectures based on capacitors or ferroelectric FETs will give unprecedented flexibility for “fine-grained” logic –in-memory (LiM) circuits, which allows data storage close to logic circuits, reduces energy cost of data transfer and allows smart gating for “normally-off” computing. The project is built around four objectives: i) Optimization of Materials, ii) LiM design & architecture, iii) Integration of Hf(Zr)O2-based NVM arrays, iv) Memory test & validation & benchmarking. The work calls on the full spectrum of expertise from advanced materials synthesis and characterization, processing, design and integration and benchmarking to make substantial progress towards a truly disruptive energy efficient memory and logic technology. A team of 8 partners, including a major European semiconductor company, the leader in the field of ferroelectric HfO2 and a large technology laboratory, originating from 5 EU states, will join forces to deliver experimental demonstrators creating the opportunity for the EU industry to establish a dominant position in IoT innovative components market and make an impact on the future roadmap for embedded systems and applications.

 Deliverables

List of deliverables.
Dissemination and Exploitation Plan (update 1) Documents, reports 2020-01-30 10:22:25
Project Website and visual identity Websites, patent fillings, videos etc. 2020-01-30 10:22:25

Take a look to the deliverables list in detail:  detailed list of 3eFERRO deliverables.

 Publications

year authors and title journal last update
List of publications.
2019 Terence Mittmann, Monica Materano, Patrick D. Lomenzo, Min Hyuk Park, Igor Stolichnov, Matteo Cavalieri, Chuanzhen Zhou, Ching‐Chang Chung, Jacob L. Jones, Thomas Szyjka, Martina Müller, Alfred Kersch, Thomas Mikolajick, Uwe Schroeder
Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering
published pages: 1900042, ISSN: 2196-7350, DOI: 10.1002/admi.201900042
Advanced Materials Interfaces 2020-01-30
2019 Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering
published pages: 21203, ISSN: 2166-2754, DOI: 10.1116/1.5060643
Journal of Vacuum Science & Technology B 37/2 2020-01-30

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The information about "3EFERRO" are provided by the European Opendata Portal: CORDIS opendata.

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