3eFERRO SIGNED
Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2
Total Cost €
0EC-Contrib. €
0Partnership
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03eFERRO project word cloud
Explore the words cloud of the 3eFERRO project. It provides you a very rough idea of what is the project "3eFERRO" about.
Project "3eFERRO" data sheet
The following table provides information about the project.
| Coordinator |
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Organization address contact info |
| Coordinator Country | France [FR] |
| Project website | https://www.3eferro.eu |
| Total cost | 3˙989˙571 € |
| EC max contribution | 3˙989˙570 € (100%) |
| Programme |
1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)) |
| Code Call | H2020-ICT-2017-1 |
| Funding Scheme | RIA |
| Starting year | 2018 |
| Duration (year-month-day) | from 2018-01-01 to 2021-06-30 |
Partnership
Take a look of project's partnership.
| # | ||||
|---|---|---|---|---|
| 1 | COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | FR (PARIS 15) | coordinator | 1˙462˙493.00 |
| 2 | NAMLAB GGMBH | DE (DRESDEN) | participant | 718˙437.00 |
| 3 | "NATIONAL CENTER FOR SCIENTIFIC RESEARCH ""DEMOKRITOS""" | EL (AGIA PARASKEVI) | participant | 369˙587.00 |
| 4 | ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE | CH (LAUSANNE) | participant | 367˙000.00 |
| 5 | ECOLE CENTRALE DE LYON | FR (ECULLY) | participant | 357˙437.00 |
| 6 | INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR | RO (MAGURELE) | participant | 310˙125.00 |
| 7 | FORSCHUNGSZENTRUM JULICH GMBH | DE (JULICH) | participant | 219˙500.00 |
| 8 | STMICROELECTRONICS CROLLES 2 SAS | FR (CROLLES) | participant | 184˙988.00 |
Map
Project objective
Edge computing requires highly energy efficient microprocessor units (MCU) with embedded non-volatile memories (eNVM) to process data at the source that is the IoT sensor node. eFLASH technology is limited by low write speed, high power and low endurance. Alternative fast, low power and high endurance eNVM could greatly enhance energy efficiency and allow flexibility for finer grain of logic and memory. FeRAM has the highest endurance of all emerging NVMs. However, perovskite-based eFeRAM is incompatible with Si CMOS, does not easily scale and has manufacturability and cost issues. We introduce new ferroelectric material Hf(Zr)O2 to make FeRAM competitive NVM candidate for IoT. HfO2 compatibility with Si processing will facilitate integration, improve manufacturability and allow better scaling. Different cell architectures based on capacitors or ferroelectric FETs will give unprecedented flexibility for “fine-grained” logic –in-memory (LiM) circuits, which allows data storage close to logic circuits, reduces energy cost of data transfer and allows smart gating for “normally-off” computing. The project is built around four objectives: i) Optimization of Materials, ii) LiM design & architecture, iii) Integration of Hf(Zr)O2-based NVM arrays, iv) Memory test & validation & benchmarking. The work calls on the full spectrum of expertise from advanced materials synthesis and characterization, processing, design and integration and benchmarking to make substantial progress towards a truly disruptive energy efficient memory and logic technology. A team of 8 partners, including a major European semiconductor company, the leader in the field of ferroelectric HfO2 and a large technology laboratory, originating from 5 EU states, will join forces to deliver experimental demonstrators creating the opportunity for the EU industry to establish a dominant position in IoT innovative components market and make an impact on the future roadmap for embedded systems and applications.
Deliverables
| Dissemination and Exploitation Plan (update 1) | Documents, reports | 2020-01-30 10:22:25 |
| Project Website and visual identity | Websites, patent fillings, videos etc. | 2020-01-30 10:22:25 |
Take a look to the deliverables list in detail: detailed list of 3eFERRO deliverables.
Publications
| year | authors and title | journal | last update |
|---|---|---|---|
| 2019 |
Terence Mittmann, Monica Materano, Patrick D. Lomenzo, Min Hyuk Park, Igor Stolichnov, Matteo Cavalieri, Chuanzhen Zhou, Ching‐Chang Chung, Jacob L. Jones, Thomas Szyjka, Martina Müller, Alfred Kersch, Thomas Mikolajick, Uwe Schroeder Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering published pages: 1900042, ISSN: 2196-7350, DOI: 10.1002/admi.201900042 |
Advanced Materials Interfaces | 2020-01-30 |
| 2019 |
Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering published pages: 21203, ISSN: 2166-2754, DOI: 10.1116/1.5060643 |
Journal of Vacuum Science & Technology B 37/2 | 2020-01-30 |
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The information about "3EFERRO" are provided by the European Opendata Portal: CORDIS opendata.