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VHPC

Optical valley Hall effect in gapped graphene for infrared and terahertz light photodetection

Total Cost €

0

EC-Contrib. €

0

Partnership

0

Views

0

 VHPC project word cloud

Explore the words cloud of the VHPC project. It provides you a very rough idea of what is the project "VHPC" about.

analogy    charge    crystal    signal    manifest    manipulating    band    freedom    close    paradigm    possibility    carrier    fabricating    valleys    inversion    corner    core    nitride    optical    electron    experimental    effect    curvatures    optoelectronics    transistor    infrared    optoelectronic    dimensional    confining    lattices    labeled    magnetic    practical    dynamics    intriguing    measuring    electrons    found    section    moments    terahertz    pseudospin    hall    graphene    generation    gate    dependent    2d    spin    hexagonal    photodetection    ultrahigh    function    break    sections    pair    quantum       photodetector    heterostructure    symmetry    structures    ultrafast    brillouin    zone    time    breaking    prospect    modern    carriers    berry    boron    explore    orbital    behaviors    contrasted    mobility    specified    bilayer    extremely    dual    fundamental    supplies    valley    giving    dof    bloch    rule    degrees    device    resolved    valleytronics    gapped    computing    first   

Project "VHPC" data sheet

The following table provides information about the project.

Coordinator
FUNDACIO INSTITUT DE CIENCIES FOTONIQUES 

Organization address
address: AVINGUDA CARL FRIEDRICH GAUSS 3
city: Castelldefels
postcode: 8860
website: www.icfo.eu

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Spain [ES]
 Total cost 158˙121 €
 EC max contribution 158˙121 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2017
 Duration (year-month-day) from 2017-08-22   to  2019-08-21

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    FUNDACIO INSTITUT DE CIENCIES FOTONIQUES ES (Castelldefels) coordinator 158˙121.00

Map

 Project objective

Modern information processing is based on the degrees of freedom (DOF) of electrons, which are known as charge and spin. Manipulating DOF of electrons is the core function of information-processing unit such as transistor and photodetector. Finding and manipulating new DOF for electrons may open up possibility for next-generation information processing, such as quantum computing. Recently, a new DOF of electrons—valley pseudospin—was found in two dimensional (2D) hexagonal lattices, whose band structures manifest a pair of valleys at the corner of the hexagonal Brillouin zone (labeled as K and -K valley), giving rise to a valley DOF that is in close analogy to electron spin. As 2D hexagonal crystal, graphene, with ultrahigh carrier mobility and ultrafast optoelectronic signal processing ability, has great potential as carrier of valley DOF and intriguing prospect for both fundamental research and practical application of valleytronics. Therefore manipulating valley pseudospin of electrons in graphene would greatly advance the study of valleytronics. This proposal presents the first experimental study of Berry optoelectronics in gapped graphene, in particular extremely strong Valley Hall effects and Valley Hall dynamics. The implementation includes three sections. The first is to break inversion symmetry of graphene crystal by fabricating graphene/boron nitride heterostructure and dual-gate bilayer graphene device. This symmetry breaking allows the Bloch electrons in K and -K valleys to experience valley-contrasted orbital magnetic moments and Berry curvatures, which result in valley-dependent optical selection rule and valley Hall effect. This supplies us paradigm for infrared and terahertz photodetection for section two. In section three, we explore the dynamics of confining charge carriers in a specified valley, by measuring the time-resolved behaviors.

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