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VHPC

Optical valley Hall effect in gapped graphene for infrared and terahertz light photodetection

Total Cost €

0

EC-Contrib. €

0

Partnership

0

Views

0

 VHPC project word cloud

Explore the words cloud of the VHPC project. It provides you a very rough idea of what is the project "VHPC" about.

dynamics    pair    heterostructure    bilayer    practical    fabricating    close    behaviors    ultrafast    specified    freedom    optical    inversion    curvatures    manipulating    device    prospect    giving    dof    corner    computing    labeled    resolved    spin    contrasted    pseudospin    ultrahigh    confining    electrons    hexagonal    moments    crystal    analogy    mobility    rule       dual    fundamental    dimensional    carriers    optoelectronic    structures    bloch    signal    brillouin    modern    band    degrees    valleytronics    valleys    core    valley    gapped    symmetry    photodetection    berry    nitride    gate    terahertz    paradigm    found    first    section    2d    magnetic    function    manifest    generation    extremely    photodetector    experimental    explore    transistor    optoelectronics    zone    boron    electron    charge    hall    dependent    carrier    sections    infrared    intriguing    graphene    lattices    measuring    quantum    break    possibility    time    orbital    breaking    effect    supplies   

Project "VHPC" data sheet

The following table provides information about the project.

Coordinator
FUNDACIO INSTITUT DE CIENCIES FOTONIQUES 

Organization address
address: AVINGUDA CARL FRIEDRICH GAUSS 3
city: Castelldefels
postcode: 8860
website: www.icfo.eu

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Spain [ES]
 Total cost 158˙121 €
 EC max contribution 158˙121 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2017
 Duration (year-month-day) from 2017-08-22   to  2019-08-21

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    FUNDACIO INSTITUT DE CIENCIES FOTONIQUES ES (Castelldefels) coordinator 158˙121.00

Map

 Project objective

Modern information processing is based on the degrees of freedom (DOF) of electrons, which are known as charge and spin. Manipulating DOF of electrons is the core function of information-processing unit such as transistor and photodetector. Finding and manipulating new DOF for electrons may open up possibility for next-generation information processing, such as quantum computing. Recently, a new DOF of electrons—valley pseudospin—was found in two dimensional (2D) hexagonal lattices, whose band structures manifest a pair of valleys at the corner of the hexagonal Brillouin zone (labeled as K and -K valley), giving rise to a valley DOF that is in close analogy to electron spin. As 2D hexagonal crystal, graphene, with ultrahigh carrier mobility and ultrafast optoelectronic signal processing ability, has great potential as carrier of valley DOF and intriguing prospect for both fundamental research and practical application of valleytronics. Therefore manipulating valley pseudospin of electrons in graphene would greatly advance the study of valleytronics. This proposal presents the first experimental study of Berry optoelectronics in gapped graphene, in particular extremely strong Valley Hall effects and Valley Hall dynamics. The implementation includes three sections. The first is to break inversion symmetry of graphene crystal by fabricating graphene/boron nitride heterostructure and dual-gate bilayer graphene device. This symmetry breaking allows the Bloch electrons in K and -K valleys to experience valley-contrasted orbital magnetic moments and Berry curvatures, which result in valley-dependent optical selection rule and valley Hall effect. This supplies us paradigm for infrared and terahertz photodetection for section two. In section three, we explore the dynamics of confining charge carriers in a specified valley, by measuring the time-resolved behaviors.

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