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VHPC

Optical valley Hall effect in gapped graphene for infrared and terahertz light photodetection

Total Cost €

0

EC-Contrib. €

0

Partnership

0

Views

0

 VHPC project word cloud

Explore the words cloud of the VHPC project. It provides you a very rough idea of what is the project "VHPC" about.

intriguing    possibility    zone    rule    section    hall    bilayer    gate    transistor    bloch    terahertz    corner    close    electron    symmetry    analogy    orbital    carriers    curvatures    berry       mobility    2d    confining    optoelectronics    function    hexagonal    infrared    optical    found    freedom    behaviors    optoelectronic    valleys    valley    modern    labeled    ultrahigh    carrier    dynamics    device    dimensional    inversion    dof    experimental    effect    break    breaking    measuring    boron    computing    degrees    practical    giving    resolved    prospect    fundamental    magnetic    time    core    electrons    dependent    dual    ultrafast    moments    crystal    paradigm    charge    first    heterostructure    generation    spin    manipulating    brillouin    pair    manifest    gapped    structures    band    extremely    pseudospin    supplies    specified    sections    fabricating    contrasted    photodetector    lattices    explore    photodetection    valleytronics    graphene    signal    nitride    quantum   

Project "VHPC" data sheet

The following table provides information about the project.

Coordinator
FUNDACIO INSTITUT DE CIENCIES FOTONIQUES 

Organization address
address: AVINGUDA CARL FRIEDRICH GAUSS 3
city: Castelldefels
postcode: 8860
website: www.icfo.eu

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Spain [ES]
 Total cost 158˙121 €
 EC max contribution 158˙121 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2017
 Duration (year-month-day) from 2017-08-22   to  2019-08-21

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    FUNDACIO INSTITUT DE CIENCIES FOTONIQUES ES (Castelldefels) coordinator 158˙121.00

Map

 Project objective

Modern information processing is based on the degrees of freedom (DOF) of electrons, which are known as charge and spin. Manipulating DOF of electrons is the core function of information-processing unit such as transistor and photodetector. Finding and manipulating new DOF for electrons may open up possibility for next-generation information processing, such as quantum computing. Recently, a new DOF of electrons—valley pseudospin—was found in two dimensional (2D) hexagonal lattices, whose band structures manifest a pair of valleys at the corner of the hexagonal Brillouin zone (labeled as K and -K valley), giving rise to a valley DOF that is in close analogy to electron spin. As 2D hexagonal crystal, graphene, with ultrahigh carrier mobility and ultrafast optoelectronic signal processing ability, has great potential as carrier of valley DOF and intriguing prospect for both fundamental research and practical application of valleytronics. Therefore manipulating valley pseudospin of electrons in graphene would greatly advance the study of valleytronics. This proposal presents the first experimental study of Berry optoelectronics in gapped graphene, in particular extremely strong Valley Hall effects and Valley Hall dynamics. The implementation includes three sections. The first is to break inversion symmetry of graphene crystal by fabricating graphene/boron nitride heterostructure and dual-gate bilayer graphene device. This symmetry breaking allows the Bloch electrons in K and -K valleys to experience valley-contrasted orbital magnetic moments and Berry curvatures, which result in valley-dependent optical selection rule and valley Hall effect. This supplies us paradigm for infrared and terahertz photodetection for section two. In section three, we explore the dynamics of confining charge carriers in a specified valley, by measuring the time-resolved behaviors.

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