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VHPC

Optical valley Hall effect in gapped graphene for infrared and terahertz light photodetection

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

VHPC project word cloud

Explore the words cloud of the VHPC project. It provides you a very rough idea of what is the project "VHPC" about.

terahertz supplies valleys carriers possibility quantum ultrahigh optical photodetection rule berry 2d break band optoelectronics moments computing heterostructure zone curvatures carrier lattices fundamental dependent gate transistor core contrasted behaviors signal pseudospin photodetector analogy charge inversion dof manipulating prospect modern close resolved bloch generation breaking hexagonal effect orbital measuring first valley function gapped electrons infrared corner symmetry pair k hall graphene giving section manifest dynamics experimental ultrafast device crystal time labeled nitride dimensional specified practical valleytronics brillouin found freedom boron electron optoelectronic dual magnetic intriguing structures degrees extremely sections spin explore mobility confining bilayer paradigm fabricating

Project "VHPC" data sheet

The following table provides information about the project.

Coordinator	FUNDACIO INSTITUT DE CIENCIES FOTONIQUES Organization address address: AVINGUDA CARL FRIEDRICH GAUSS 3 city: Castelldefels postcode: 8860 website: www.icfo.eu contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Spain [ES]
Total cost	158˙121 €
EC max contribution	158˙121 € (100%)
Programme	1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
Code Call	H2020-MSCA-IF-2016
Funding Scheme	MSCA-IF-EF-ST
Starting year	2017
Duration (year-month-day)	from 2017-08-22 to 2019-08-21

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	FUNDACIO INSTITUT DE CIENCIES FOTONIQUES FUNDACIO INSTITUT DE CIENCIES FOTONIQUES Organization address address: AVINGUDA CARL FRIEDRICH GAUSS 3 city: Castelldefels postcode: 8860 website: www.icfo.eu contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	ES (Castelldefels)	coordinator	158˙121.00

Map

Project objective

Modern information processing is based on the degrees of freedom (DOF) of electrons, which are known as charge and spin. Manipulating DOF of electrons is the core function of information-processing unit such as transistor and photodetector. Finding and manipulating new DOF for electrons may open up possibility for next-generation information processing, such as quantum computing. Recently, a new DOF of electrons—valley pseudospin—was found in two dimensional (2D) hexagonal lattices, whose band structures manifest a pair of valleys at the corner of the hexagonal Brillouin zone (labeled as K and -K valley), giving rise to a valley DOF that is in close analogy to electron spin. As 2D hexagonal crystal, graphene, with ultrahigh carrier mobility and ultrafast optoelectronic signal processing ability, has great potential as carrier of valley DOF and intriguing prospect for both fundamental research and practical application of valleytronics. Therefore manipulating valley pseudospin of electrons in graphene would greatly advance the study of valleytronics. This proposal presents the first experimental study of Berry optoelectronics in gapped graphene, in particular extremely strong Valley Hall effects and Valley Hall dynamics. The implementation includes three sections. The first is to break inversion symmetry of graphene crystal by fabricating graphene/boron nitride heterostructure and dual-gate bilayer graphene device. This symmetry breaking allows the Bloch electrons in K and -K valleys to experience valley-contrasted orbital magnetic moments and Berry curvatures, which result in valley-dependent optical selection rule and valley Hall effect. This supplies us paradigm for infrared and terahertz photodetection for section two. In section three, we explore the dynamics of confining charge carriers in a specified valley, by measuring the time-resolved behaviors.

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