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FERHAZ SIGNED

Multiscale Investigations on Si-integrable Ferroelectric Hafnia-Zirconia Systems: From Fundamental Understanding to Everyday Electronics

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EC-Contrib. €

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 FERHAZ project word cloud

Explore the words cloud of the FERHAZ project. It provides you a very rough idea of what is the project "FERHAZ" about.

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Project "FERHAZ" data sheet

The following table provides information about the project.

Coordinator		 RIJKSUNIVERSITEIT GRONINGEN 

Organization address
address: Broerstraat 5
city: GRONINGEN
postcode: 9712CP
website: www.rug.nl

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.
 Coordinator Country Netherlands [NL]
 Total cost 165˙598 €
 EC max contribution 165˙598 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2017
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2018
 Duration (year-month-day) from 2018-05-01   to  2020-04-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    RIJKSUNIVERSITEIT GRONINGEN NL (GRONINGEN) coordinator 165˙598.00

Map

 Project objective

Everyday electronic devices suffer from power-loss issues originating from leakage currents in the stand-by (OFF) mode, which dominate even more with miniaturization of transistors. The concept of negative capacitance on ferroelectric (FE) materials, and consequently ferroelectric field-effect transistor (FEFET) provides a materials solution to achieve sharp-switching in FETs, and promises to be a breakthrough solution to reduce this OFF state leakage. The recent demonstrations of ferroelectricity in thin (<10 nm) Hafnia-based (HfO2) films, which are readily Si integrable is an encouraging news for FEFET technology. FEFETs have earlier eluded industrial applications owing to Si compatibility issues of well-known FE materials. FERHAZ tackles this new kind of ferroelectricity, starting from fundamental studies on its origin leading upto application oriented FEFET devices.

In FERHAZ, HfxZr1-xO2 (HZO) films with varying Zr content (x, doping) will be grown epitaxially on various substrates (strain-states) including Silicon, under various oxygen partial pressures (point-defects). The FE hysteresis, dielectric and piezoelectric response on these films will be measured, and will be correlated with atomic structure, symmetry, microstructure and chemistry analysis obtained via high-resolution STEM and spectroscopy. The best FE films on Si will be selected to study the phase-competition, FE and piezoelectric behavior in real time under strain and electric field via in situ TEM measurements. Lessons from these fundamental multiscale studies will be employed in the fabrication and optimal design of FEFET with small leakage.

FERHAZ will integrate my expertise on in situ microscopy with the extensive experience of the host-lab in FE thin-film growth and characterization. Importantly, the skills and training obtained will enable me to position myself as a leading young scientist in materials science, strengthening my career prospectives to be a future group leader.

 Publications

year authors and title journal last update
List of publications.
2019 Pavan Nukala, Jordi Antoja-Lleonart, Yingfen Wei, Lluis Yedra, Brahim Dkhil, Beatriz Noheda
Direct Epitaxial Growth of Polar (1 – x )HfO 2 –( x )ZrO 2 Ultrathin Films on Silicon
published pages: , ISSN: 2637-6113, DOI: 10.1021/acsaelm.9b00585 		ACS Applied Electronic Materials 2020-03-23
2018 Yingfen Wei, Pavan Nukala, Mart Salverda, Sylvia Matzen, Hong Jian Zhao, Jamo Momand, Arnoud S. Everhardt, Guillaume Agnus, Graeme R. Blake, Philippe Lecoeur, Bart J. Kooi, Jorge Íñiguez, Brahim Dkhil, Beatriz Noheda
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
published pages: 1095-1100, ISSN: 1476-1122, DOI: 10.1038/s41563-018-0196-0 		Nature Materials 17/12 2020-03-23

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The information about "FERHAZ" are provided by the European Opendata Portal: CORDIS opendata.

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